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Shi Xiao-Hong, Chen Jing-Jin, Cao Xin-Rui, Wu Shun-Qing, Zhu Zi-Zhong. Formation of oxygen vacancies in Li-rich Mn-based cathode material Li1.167Ni0.167Co0.167Mn0.5O2. Acta Physica Sinica,
2022, 71(17): 178202.
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Wang Zhi-Qing, Yao Xiao-Ping, Shen Jie, Zhou Jing, Chen Wen, Wu Zhi. Micromechanism of ferroelectric fatigue and enhancement of fatigue resistance of lead zirconate titanate thin films. Acta Physica Sinica,
2021, 70(14): 146302.
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Tang Hui, Tang Xin-Gui, Jiang Yan-Ping, Liu Qiu-Xiang, Li Wen-Hua. Oxygen vacancy effect on ionic conductivity and relaxation phenomenon of SrxBa1–xNb2O6 ceramics. Acta Physica Sinica,
2019, 68(22): 227701.
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Wang Ze-Pu, Fu Nian, Yu Han, Xu Jing-Wei, He Qi, Zheng Shu-Kai, Ding Bang-Fu, Yan Xiao-Bing. Enhancing oxygen vacancy photocatalytic efficiency of bismuth tungstate using In-doped W site. Acta Physica Sinica,
2019, 68(21): 217102.
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Zhao Run, Yang Hao. Oxygen vacancies induced tuning effect on physical properties of multiferroic perovskite oxide thin films. Acta Physica Sinica,
2018, 67(15): 156101.
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He Jin-Yun, Peng Dai-Jiang, Wang Yan-Wu, Long Fei, Zou Zheng-Guang. First principle calculation and photocatalytic performance of BixWO6 (1.81 ≤ x ≤ 2.01) with oxygen vacancies. Acta Physica Sinica,
2018, 67(6): 066801.
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Chen Ya-Qi, Xu Hua-Kai, Tang Dong-Sheng, Yu Fang, Lei Le, Ouyang Gang. Electrical transport properties and related mechanism of single SnO2 nanowire device. Acta Physica Sinica,
2018, 67(24): 246801.
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Li Ping, Xu Yu-Tang. Monte Carlo simulation of time-dependent dielectric breakdown of oxide caused by migration of oxygen vacancies. Acta Physica Sinica,
2017, 66(21): 217701.
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Dai Guang-Zhen, Jiang Xian-Wei, Xu Tai-Long, Liu Qi, Chen Jun-Ning, Dai Yue-Hua. Effect of oxygen vacancy on lattice and electronic properties of HfO2 by means of density function theory study. Acta Physica Sinica,
2015, 64(3): 033101.
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Jiang Ran, Du Xiang-Hao, Han Zu-Yin, Sun Wei-Deng. Cluster distribution for oxygen vacancy in Ti/HfO2/Pt resistive switching memory device. Acta Physica Sinica,
2015, 64(20): 207302.
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Dai Guang-Zhen, Dai Yue-Hua, Xu Tai-Long, Wang Jia-Yu, Zhao Yuan-Yang, Chen Jun-Ning, Liu Qi. First principles study on influence of oxygen vacancy in HfO2 on charge trapping memory. Acta Physica Sinica,
2014, 63(12): 123101.
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Ma Li-Sha, Zhang Qian-Cheng, Cheng Lin. First-principles calculations on electronic structures of Zn adsorbed on the anatase TiO2 (101) surface having oxygen vacancy and hydroxyl groups. Acta Physica Sinica,
2013, 62(18): 187101.
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Gong Yu, Chen Bai-Hua, Xiong Liang-Ping, Gu Mei, Xiong Jie, Gao Xiao-Ling, Luo Yang-Ming, Hu Sheng, Wang Yu-Hua. Effect of oxygen vacancies on the fluorescence and phosphorescence properties of Ca5MgSi3O12：Eu2+, Dy3+. Acta Physica Sinica,
2013, 62(15): 153201.
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Yang Chang-Ping, Li Min-Yi, Song Xue-Ping, Xiao Hai-Bo, Xu Ling-Fang. Effect of oxygen content on giant dielectric constant and dielectric process in CaCu3Ti4O12. Acta Physica Sinica,
2012, 61(19): 197702.
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Mo Qiu-Yan, Zhao Yan-Li. Frequency responses of communication avalanche photodiodes. Acta Physica Sinica,
2011, 60(7): 072902.
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Yu Gang, Dong Xian-Lin, Wang Gen-Shui, Chen Xue-Feng, Cao Fei. Ferroelectric polarization reversal behavior in 63PbTiO3-37BiScO3 bulk ceramics. Acta Physica Sinica,
2010, 59(12): 8890-8896.
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Zhao Su-Chuan, Li Guo-Rong, Zhang Li-Na, Wang Tian-Bao, Ding Ai-Li. Dielectric properties of Na0.25K0.25Bi0.5TiO3 lead-free ceramics. Acta Physica Sinica,
2006, 55(7): 3711-3715.
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Wang Long-Hai, Yu Jun, Wang Yun-Bo, Peng Gang, Liu Feng, Gao Jun-Xiong. A model of ferroelectric capacitors based on hysteresis loop. Acta Physica Sinica,
2005, 54(2): 949-954.
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Yao Ming-Zhen, Gu Mu. Theoretical study on defects associated with oxygen vacancy in PbWO4 crystal. Acta Physica Sinica,
2003, 52(2): 459-462.
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