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2021, 70(19): 197801.
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2020, 69(19): 192401.
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2015, 64(17): 177804.
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2011, 60(9): 098107.
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2010, 59(7): 4831-4836.
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Liu Xian-Ming, Li Bin-Cheng, Gao Wei-Dong, Han Yan-Ling. Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers. Acta Physica Sinica,
2010, 59(3): 1632-1637.
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Zhang Hong-Hua, Zhang Chong-Hong, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong. Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica,
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Zhou Li-Hong, Zhang Chong-Hong, Li Bing-Sheng, Yang Yi-Tao, Song Yin. Photoluminescence of Ar+ implanted sapphire before and after annealing. Acta Physica Sinica,
2008, 57(4): 2562-2566.
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2006, 55(3): 1424-1429.
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2002, 51(3): 629-634.
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2002, 51(3): 659-662.
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2000, 49(7): 1383-1385.
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