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(1)北京大学分子动态与稳态结构国家重点实验室,化学与分子工程学院物理化学研究所,北京100871; (2)北京大学物理学院,北京100871
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[1] Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui. Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica, 2013, 62(11): 117103. doi: 10.7498/aps.62.117103 [2] Yang Tian-Yong, Kong Chun-Yang, Ruan Hai-Bo, Qin Guo-Ping, Li Wan-Jun, Liang Wei-Wei, Meng Xiang-Dan, Zhao Yong-Hong, Fang Liang, Cui Yu-Ting. Study on the p-type conductivities and Raman scattering properties of N+ ion-implanted O-rich ZnO thin films. Acta Physica Sinica, 2013, 62(3): 037703. doi: 10.7498/aps.62.037703 [3] Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Wang Xiao-Hui, Li Biao, Xu Yuan. Photoemission mechanism of GaN vacuum surface electron source. Acta Physica Sinica, 2011, 60(12): 127901. doi: 10.7498/aps.60.127901 [4] Jin Yu-Zhe, Hu Yi-Pei, Zeng Xiang-Hua, Yang Yi-Jun. Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well. Acta Physica Sinica, 2010, 59(2): 1258-1262. doi: 10.7498/aps.59.1258 [5] Zang Hang, Wang Zhi-Guang, Pang Li-Long, Wei Kong-Fang, Yao Cun-Feng, Shen Tie-Long, Sun Jian-Rong, Ma Yi-Zhun, Gou Jie, Sheng Yan-Bin, Zhu Ya-Bin. Raman investigation of ion-implanted ZnO films. Acta Physica Sinica, 2010, 59(7): 4831-4836. doi: 10.7498/aps.59.4831 [6] Zhou Mei, Chang Qing-Ying, Zhao De-Gang. A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector. Acta Physica Sinica, 2008, 57(4): 2548-2553. doi: 10.7498/aps.57.2548 [7] Zhou Mei, Zhao De-Gang. Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica, 2008, 57(7): 4570-4574. doi: 10.7498/aps.57.4570 [8] Lü Ling, Gong Xin, Hao Yue. Properties of p-type GaN etched by inductively coupled plasma and their improvement. Acta Physica Sinica, 2008, 57(2): 1128-1132. doi: 10.7498/aps.57.1128 [9] Shen Ye, Xing Huai-Zhong, Yu Jian-Guo, Lü Bin, Mao Hui-Bing, Wang Ji-Qing. Curie-temperature modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells. Acta Physica Sinica, 2007, 56(6): 3453-3457. doi: 10.7498/aps.56.3453 [10] Guo Liang-Liang, Feng Qian, Ma Xiang-Bai, Hao Yue, Liu Jie. Relation between breakdown voltage and current collapse in GaN FP-HEMTs. Acta Physica Sinica, 2007, 56(5): 2900-2904. doi: 10.7498/aps.56.2900 [11] Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong. Study on optical properties of Er/Er+O doped GaN thin films. Acta Physica Sinica, 2007, 56(3): 1621-1626. doi: 10.7498/aps.56.1621 [12] Zhou Mei, Zuo Shu-Hua, Zhao De-Gang. A new Schottky barrier structure of GaN-based ultraviolet photodetector. Acta Physica Sinica, 2007, 56(9): 5513-5517. doi: 10.7498/aps.56.5513 [13] Yu Quan-Zhi, Li Yu-Tong, Jiang Xiao-Hua, Liu Yong-Gang, Wang Zhe-Bin, Dong Quan-Li, Liu Feng, Zhang Zhe, Huang Li-Zhen, C. Danson, D. Pepler, Ding Yong-Kun, Fu Shi-Nian, Zhang Jie. Infulence of electron temperature on the two peaks of Thomson scattering ion-acoustic waves in laser plasmas. Acta Physica Sinica, 2007, 56(1): 359-365. doi: 10.7498/aps.56.359 [14] Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong. Deep level transient spectroscopy studies of Er and Pr implanted GaN films. Acta Physica Sinica, 2006, 55(3): 1407-1412. doi: 10.7498/aps.55.1407 [15] Zhang Xiao-Dong, Lin De-Xu, Li Gong-Ping, You Wei, Zhang Li-Min, Zhang Yu, Liu Zheng-Min. Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions. Acta Physica Sinica, 2006, 55(10): 5487-5493. doi: 10.7498/aps.55.5487 [16] Meng Kang, Jiang Sen-Lin, Hou Li-Na, Li Chan, Wang Kun, Ding Zhi-Bo, Yao Shu-De. Study of radiation damage in Mg+-implanted GaN. Acta Physica Sinica, 2006, 55(5): 2476-2481. doi: 10.7498/aps.55.2476 [17] Wan Wei, Tang Chun-Yan, Wang Yu-Mei, Li Fang-Hua. A study on the stacking fault in GaN crystals by high-resolution electron microscope imaging. Acta Physica Sinica, 2005, 54(9): 4273-4278. doi: 10.7498/aps.54.4273 [18] Qin Qi, Yu Nai-Sen, Guo Li-Wei, Wang Yang, Zhu Xue-Liang, Chen Hong, Zhou Jun-Ming. Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition. Acta Physica Sinica, 2005, 54(11): 5450-5454. doi: 10.7498/aps.54.5450 [19] Liu Xiang-Fei, Jiang Chang-Zhong, Ren Feng, Fu Qiang. Optical absorption, Raman spectra and TEM study of Ag nanoparticles formed by ion implantation into a-SiO2. Acta Physica Sinica, 2005, 54(10): 4633-4637. doi: 10.7498/aps.54.4633 [20] Song Shu-Fang, Zhou Sheng-Qiang, Chen Wei-De, Zhu Jian-Jun, Chen Chang-Yong, Xu Zhen-Jia. RBS/channeling study and photoluminscence properties of Er-implanted GaN. Acta Physica Sinica, 2003, 52(10): 2558-2562. doi: 10.7498/aps.52.2558
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- PDF Downloads: 1166
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Publishing process
- Received Date:
03 July 2001
- Accepted Date:
28 August 2001
- Published Online:
03 April 2005
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