A new growth method of roughed p-GaN in GaN-based light emitting diodes

Li Shui-Qing; Wang Lai; Han Yan-Jun; Luo Yi; Deng He-Qing; Qiu Jian-Sheng; Zhang Jie

doi:10.7498/aps.60.098107

Abstract

A new growth method of roughed p-GaN has been demonstrated in this paper. First, some crystal seeds of p-GaN are obtained by utilizing low-temperature growth. Then, a p-GaN high-temperature expitaxy layer is grown on it subsequently with a fast growth rate, which will enlarge the roughness degree. Compared with the luminous flux of the conventional light emitting diode with flat p-GaN, the luminous flux is improved by 45%. Meanwhile, it is found that the problems of large reverse current and high forward bias aroused by the low-temperature epitaxy are also solved.

Keywords:

surface roughness /
GaN /
p-GaN /
LED

Authors and contacts

(1)Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China; (2)Xiamen Sanan Optoelectronics Co. Ltd., Xiamen 361009, China; (3)Xiamen Sanan Optoelectronics Co. Ltd., Xiamen 361009, China;Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

References

[1]	Nishida T, Saito H, Kobayashi N, Naoki K 2001 Appl. Phys. Lett. 79 711
[2]	Shakya J, Kim K H, Lin J Y, Jiang H X 2004 Appl. Phys. Lett. 85 142
[3]	Chen Y X, Zheng W H, Chen W, Chen L H, Tan Y D, Shen G D 2010 Acta. Phys. Sin. 59 8083 (in Chinese) [陈依新、郑婉华、陈微、陈良惠、汤益丹、沈光地 2010 59 8083]
[4]	Tadatomo K, Okagawa H, Ohuchi Y, Tsunekawa T, Imada Y, Kato M, Taguchi T 2001 Jpn. J. Appl. Phys. 40 L583
[5]	Jiang Y, Luo Y, Wang L, Li H T, Xi G Y, Zhao W, Han Y J 2009 Acta. Phys. Sin. 58 3468 (in Chinese) [江洋、罗毅、汪莱、李洪涛、席光义、赵维、韩彦军 2009 58 3468]
[6]	Fujii T, Gao Y, Sharma R, Hu E L, DenBaars S P, Nakamura S 2004 Appl. Phys. Lett. 84 855
[7]	Park E H, Ferguson I T, Jeon S K, Park J S, Yoo T K 2006 Appl. Phys. Lett. 89 251106
[8]	Hao M, Egawa T, Ishikawa H 2006 Appl. Phys. Lett. 89 241907
[9]	Pan S M, Tu R C, Fan Y M, Yeh R C 2003 IEEE Photon. Tech. Lett. 15 649
[10]	Tsai C M, Sheu J K, Lai W C, Hsu Y P, Wang P T, Kuo C T, Kuo C W, Chang S J, Su Y K 2005 IEEE Trans. on Electron. Dev. 26 464
[11]	Liu C H, Chuang R W, Chang S J, Su Y K, Wu L W, Lin C C 2004 Mater. Sci. Eng. B 112 10

Cited By

[1]	Nishida T, Saito H, Kobayashi N, Naoki K 2001 Appl. Phys. Lett. 79 711
[2]	Shakya J, Kim K H, Lin J Y, Jiang H X 2004 Appl. Phys. Lett. 85 142
[3]	Chen Y X, Zheng W H, Chen W, Chen L H, Tan Y D, Shen G D 2010 Acta. Phys. Sin. 59 8083 (in Chinese) [陈依新、郑婉华、陈微、陈良惠、汤益丹、沈光地 2010 59 8083]
[4]	Tadatomo K, Okagawa H, Ohuchi Y, Tsunekawa T, Imada Y, Kato M, Taguchi T 2001 Jpn. J. Appl. Phys. 40 L583
[5]	Jiang Y, Luo Y, Wang L, Li H T, Xi G Y, Zhao W, Han Y J 2009 Acta. Phys. Sin. 58 3468 (in Chinese) [江洋、罗毅、汪莱、李洪涛、席光义、赵维、韩彦军 2009 58 3468]
[6]	Fujii T, Gao Y, Sharma R, Hu E L, DenBaars S P, Nakamura S 2004 Appl. Phys. Lett. 84 855
[7]	Park E H, Ferguson I T, Jeon S K, Park J S, Yoo T K 2006 Appl. Phys. Lett. 89 251106
[8]	Hao M, Egawa T, Ishikawa H 2006 Appl. Phys. Lett. 89 241907
[9]	Pan S M, Tu R C, Fan Y M, Yeh R C 2003 IEEE Photon. Tech. Lett. 15 649
[10]	Tsai C M, Sheu J K, Lai W C, Hsu Y P, Wang P T, Kuo C T, Kuo C W, Chang S J, Su Y K 2005 IEEE Trans. on Electron. Dev. 26 464
[11]	Liu C H, Chuang R W, Chang S J, Su Y K, Wu L W, Lin C C 2004 Mater. Sci. Eng. B 112 10

[1]	Liu Qing-Bin, Yu Cui, Guo Jian-Chao, Ma Meng-Yu, He Ze-Zhao, Zhou Chuang-Jie, Gao Xue-Dong, Yu Hao, Feng Zhi-Hong. Influence of polycrystalline diamond on silicon-based GaN material. Acta Physica Sinica, 2023, 72(9): 098104. doi: 10.7498/aps.72.20221942
[2]	Zhao Jian-Cheng, Wu Chao-Xing, Guo Tai-Liang. Carrier transport model of non-carrier-injection light-emitting diode. Acta Physica Sinica, 2023, 72(4): 048503. doi: 10.7498/aps.72.20221831
[3]	Lei Zhen-Shuai, Sun Xiao-Wei, Liu Zi-Jiang, Song Ting, Tian Jun-Hong. Phase diagram prediction and high pressure melting characteristics of GaN. Acta Physica Sinica, 2022, 71(19): 198102. doi: 10.7498/aps.71.20220510
[4]	Yuan Ying-Kuo, Guo Wei-Ling, Du Zai-Fa, Qian Feng-Song, Liu Ming, Wang Le, Xu Chen, Yan Qun, Sun Jie. Applications of graphene transistor optimized fabrication process in monolithic integrated driving gallium nitride micro-light-emitting diode. Acta Physica Sinica, 2021, 70(19): 197801. doi: 10.7498/aps.70.20210122
[5]	Xie Fei, Zang Hang, Liu Fang, He Huan, Liao Wen-Long, Huang Yu. Simulated research on displacement damage of gallium nitride radiated by different neutron sources. Acta Physica Sinica, 2020, 69(19): 192401. doi: 10.7498/aps.69.20200064
[6]	Huang Wei, Li Yue-Long, Ren Hui-Zhi, Wang Peng-Yang, Wei Chang-Chun, Hou Guo-Fu, Zhang De-Kun, Xu Sheng-Zhi, Wang Guang-Cai, Zhao Ying, Yuan Ming-Jian, Zhang Xiao-Dan. Perovskite light-emitting diodes based on n-type nanocrystalline silicon oxide electron injection layer. Acta Physica Sinica, 2019, 68(12): 128103. doi: 10.7498/aps.68.20190258
[7]	Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang. Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diode. Acta Physica Sinica, 2017, 66(15): 158501. doi: 10.7498/aps.66.158501
[8]	Feng Bo, Deng Biao, Liu Le-Gong, Li Zeng-Cheng, Feng Mei-Xin, Zhao Han-Min, Sun Qian. Effect of plasma surface treatment on embedded n-contact for GaN-based blue light-emitting diodes grown on Si substrate. Acta Physica Sinica, 2017, 66(4): 047801. doi: 10.7498/aps.66.047801
[9]	Wang Guang-Xu, Chen Peng, Liu Jun-Lin, Wu Xiao-Ming, Mo Chun-Lan, Quan Zhi-Jue, Jiang Feng-Yi. Influence of etching AlN buffer layer on the surface roughening of N-polar n-GaN grown on Si substrate. Acta Physica Sinica, 2016, 65(8): 088501. doi: 10.7498/aps.65.088501
[10]	Huang Bin-Bin, Xiong Chuan-Bing, Tang Ying-Wen, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi. Changes of stress and luminescence properties in GaN-based LED films before and after transferring the films to a flexible layer on a submount from the silicon epitaxial substrate. Acta Physica Sinica, 2015, 64(17): 177804. doi: 10.7498/aps.64.177804
[11]	Zhang Chao-Yu, Xiong Chuan-Bing, Tang Ying-Wen, Huang Bin-Bin, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi. Changes of micro zone luminescent properties and stress of GaN-based light emitting diode film grown on patterned silicon substrate, induced by the removal of the substrate and AlN buffer layer. Acta Physica Sinica, 2015, 64(18): 187801. doi: 10.7498/aps.64.187801
[12]	Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi. Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica, 2015, 64(10): 107801. doi: 10.7498/aps.64.107801
[13]	Chen Huan-Ting, Lü Yi-Jun, Gao Yu-Lin, Chen Zhong, Zhuang Rong-Rong, Zhou Xiao-Fang, Zhou Hai-Guang. The physical characteristic study on luminance uniformity and temperature for power GaN LEDs chip. Acta Physica Sinica, 2012, 61(16): 167104. doi: 10.7498/aps.61.167104
[14]	Gao Hui, Kong Fan-Min, Li Kang, Chen Xin-Lian, Ding Qing-An, Sun Jing. Structural optimization of GaN blue light LED with double layers of photonic crystals. Acta Physica Sinica, 2012, 61(12): 127807. doi: 10.7498/aps.61.127807
[15]	Wang Guang-Xu, Tao Xi-Xia, Xiong Chuan-Bing, Liu Jun-Lin, Feng Fei-Fei, Zhang Meng, Jiang Feng-Yi. Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates. Acta Physica Sinica, 2011, 60(7): 078503. doi: 10.7498/aps.60.078503
[16]	Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao. Analyses of laser-induced p-type doping of GaN in the improvement of light-emitting diodes. Acta Physica Sinica, 2010, 59(2): 1268-1274. doi: 10.7498/aps.59.1268
[17]	Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di. Improved properties of light emitting diode by rough p-GaN grown at lower temperature. Acta Physica Sinica, 2010, 59(2): 1233-1236. doi: 10.7498/aps.59.1233
[18]	Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao. Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica, 2009, 58(10): 7189-7193. doi: 10.7498/aps.58.7189
[19]	Shen Guang-Di, Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling. Research on effects of current spreading and optimized contact scheme for high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2008, 57(1): 472-476. doi: 10.7498/aps.57.472
[20]	Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di. Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica, 2006, 55(3): 1424-1429. doi: 10.7498/aps.55.1424

Catalog

Vol. 60, Issue 9 - 2011-05-05

Metrics

Abstract views: 10246
PDF Downloads: 783
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板