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Yu Sen, Xu Sheng-Rui, Tao Hong-Chang, Wang Hai-Tao, An Xia, Yang He, Xu Kang, Zhang Jin-Cheng, Hao Yue. Ion implantation induced nucleation and epitaxial growth of high-quality AlN. Acta Physica Sinica,
2024, 73(19): 196101.
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Liu Ming, Cao Shi-Xun, Yuan Shu-Juan, Kang Bao-Juan, Lu Bo, Zhang Jin-Cang. The study of Raman spectrum, distortion of lattice and spin reorientation phase transition on Pr doped DyFeO3 system. Acta Physica Sinica,
2013, 62(14): 147601.
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Yang Fa-Zhan, Shen Li-Ru, Wang Shi-Qing, Tang De-Li, Jin Fa-Ya, Liu Hai-Feng. UV Raman and XPS studies of hydrogenous diamond-like carbon films prepared by PECVD. Acta Physica Sinica,
2013, 62(1): 017802.
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Liu Tian-Yuan, Sun Cheng-Lin, Li Zuo-Wei, Zhou Mi. Raman spectroscopy study on the C/H interaction between benzene and chloroform. Acta Physica Sinica,
2012, 61(10): 107801.
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Fang Chao, Liu Ma-Lin. The study of the Raman spectra of SiC layers in TRISO particles. Acta Physica Sinica,
2012, 61(9): 097802.
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Han Liang, Shao Hong-Xiang, He Liang, Chen Xian, Zhao Yu-Qing. The effect of nitrogen ion bombarding energy on the bonding structure of nitrogenated tetrahedral amorphous carbon film. Acta Physica Sinica,
2012, 61(10): 106803.
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Yang Tian-Yong, Kong Chun-Yang, Ruan Hai-Bo, Qin Guo-Ping, Li Wan-Jun, Liang Wei-Wei, Meng Xiang-Dan, Zhao Yong-Hong, Fang Liang, Cui Yu-Ting. Effects of the annealing temperature on microstructure and room-temperature ferromagnetism of N+ ion-implanted ZnO: Mn thin film. Acta Physica Sinica,
2012, 61(16): 168101.
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Zhang Xue-Gui, Wang Chong, Lu Zhi-Quan, Yang Jie, Li Liang, Yang Yu. Evolution of Ge/Si quantum dots self-assembledgrown by ion beam sputtering. Acta Physica Sinica,
2011, 60(9): 096101.
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Zang Hang, Wang Zhi-Guang, Pang Li-Long, Wei Kong-Fang, Yao Cun-Feng, Shen Tie-Long, Sun Jian-Rong, Ma Yi-Zhun, Gou Jie, Sheng Yan-Bin, Zhu Ya-Bin. Raman investigation of ion-implanted ZnO films. Acta Physica Sinica,
2010, 59(7): 4831-4836.
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Liu Xian-Ming, Li Bin-Cheng, Gao Wei-Dong, Han Yan-Ling. Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers. Acta Physica Sinica,
2010, 59(3): 1632-1637.
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Zhang Hong-Hua, Zhang Chong-Hong, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong. Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica,
2009, 58(5): 3302-3308.
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Zhou Li-Hong, Zhang Chong-Hong, Li Bing-Sheng, Yang Yi-Tao, Song Yin. Photoluminescence of Ar+ implanted sapphire before and after annealing. Acta Physica Sinica,
2008, 57(4): 2562-2566.
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Chen Zhi-Quan, Kawasuso Atsuo. Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica,
2006, 55(8): 4353-4357.
doi: 10.7498/aps.55.4353
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Zhang Xiao-Dong, Lin De-Xu, Li Gong-Ping, You Wei, Zhang Li-Min, Zhang Yu, Liu Zheng-Min. Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions. Acta Physica Sinica,
2006, 55(10): 5487-5493.
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Xu Bo, Yu Qing-Xuan, Wu Qi-Hong, Liao Yuan, Wang Guan-Zhong, Fang Rong-Chuan. Effects of strain and Mg-dopant on the photoluminescencespectra in p-type GaN. Acta Physica Sinica,
2004, 53(1): 204-209.
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Cai Wei-Ying, Li Zhi-Feng, Lu Wei, Li Shou-Rong, Liang Ping-Zhi. Heat conduction investigations of the Si bridge in infrared emitter using micro- Raman scattering. Acta Physica Sinica,
2003, 52(11): 2923-2928.
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Zhang Ji-Cai, Dai Lun, Qin Guo-Gang, Ying Li-Zhen, Zhao Xin-Sheng. . Acta Physica Sinica,
2002, 51(3): 629-634.
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2002, 51(2): 424-429.
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Chen Gui-Bin, Lu Wei, Liao Zhong-Lin, Li Zhi-Feng, Chai Wei-Ying, Shen Xue-Chu, Chen Chang-Ming, Zhu De-Zhang, Hu Jun, Li Ming-Qian. . Acta Physica Sinica,
2002, 51(3): 659-662.
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LIANG ER-JUN, CHAO MING-JU. LASER-INDUCED LATTICE DEFORMATION OF POROUS SILICON REVEALED BY RAMAN AND PHOTOLUMINESCENCE SPECTROSCOPIES. Acta Physica Sinica,
2001, 50(11): 2241-2246.
doi: 10.7498/aps.50.2241
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