| [1] |
Huang Hao, Zhang Kan, Wu Ming, Li Hu, Wang Min-Juan, Zhang Shu-Ming, Chen Jian-Hong, Wen Mao. Comparison between axial residual stresses measured by Raman spectroscopy and X-ray diffraction in SiC fiber reinforced titanium matrix composite. Acta Physica Sinica,
2018, 67(19): 197203.
doi: 10.7498/aps.67.20181157
|
| [2] |
Deng Fa-Ming. Effect of intense laser irradiation on the electronic properties of 6H-SiC. Acta Physica Sinica,
2016, 65(10): 107101.
doi: 10.7498/aps.65.107101
|
| [3] |
Ma Li-Ya, Li Yu-Dong, Guo Qi, Ai Er-Ken, Wang Hai-Jiao, Zeng Jun-Zhe. Photoluminescence spectra of 1 MeV electron beam irradiated In0.53Ga0.47As/InP quantum well and bulk materials. Acta Physica Sinica,
2015, 64(15): 154217.
doi: 10.7498/aps.64.154217
|
| [4] |
Zhou Hai-Liang, Gu Qing-Tian, Zhang Qing-Hua, Liu Bao-An, Zhu Li-Li, Zhang Li-Song, Zhang Fang, Xu Xin-Guang, Wang Zheng-Ping, Sun Xun, Zhao Xian. Raman spectroscopic study on the micro-structure of NH4H2PO4 and ND4D2PO4 crystals. Acta Physica Sinica,
2015, 64(19): 197801.
doi: 10.7498/aps.64.197801
|
| [5] |
Du Yang-Yang, Li Bing-Sheng, Wang Zhi-Guang, Sun Jian-Rong, Yao Cun-Feng, Chang Hai-Long, Pang Li-Long, Zhu Ya-Bin, Cui Ming-Huan, Zhang Hong-Peng, Li Yuan-Fei, Wang Ji, Zhu Hui-Ping, Song Peng, Wang Dong. Spectra study of He-irradiation induced defects in 6H-SiC. Acta Physica Sinica,
2014, 63(21): 216101.
doi: 10.7498/aps.63.216101
|
| [6] |
Yun Zhi-Qiang, Wei Ru-Sheng, Li Wei, Luo Wei-Wei, Wu Qiang, Xu Xian-Gang, Zhang Xin-Zheng. Sub-diffraction-limit fabrication of 6H-SiC with femtosecond laser. Acta Physica Sinica,
2013, 62(6): 068101.
doi: 10.7498/aps.62.068101
|
| [7] |
Yang Tian-Yong, Kong Chun-Yang, Ruan Hai-Bo, Qin Guo-Ping, Li Wan-Jun, Liang Wei-Wei, Meng Xiang-Dan, Zhao Yong-Hong, Fang Liang, Cui Yu-Ting. Study on the p-type conductivities and Raman scattering properties of N+ ion-implanted O-rich ZnO thin films. Acta Physica Sinica,
2013, 62(3): 037703.
doi: 10.7498/aps.62.037703
|
| [8] |
Deng Quan, Ma Yong, Yang Xiao-Hong, Ye Li-Juan, Zhang Xue-Zhong, Zhang Qi, Fu Hong-Wei. Photoluminescence and Raman properties of Sb-doped ZnO thin film. Acta Physica Sinica,
2012, 61(24): 247701.
doi: 10.7498/aps.61.247701
|
| [9] |
Li Li-Min, Pan Hai-Bin, Yan Wen-Sheng, Xu Peng-Shou, Wei Shi-Qiang, Chen Xiu-Fang, Xu Xian-Gang, Kang Chao-Yang, Tang Jun. Preparation of graphene on different-polarity 6H-SiC substrates and the study of their electronic structures. Acta Physica Sinica,
2011, 60(4): 047302.
doi: 10.7498/aps.60.047302
|
| [10] |
Zhou Kai, Li Hui, Wang Zhu. Defects in proton-irradiated Zn-doped GaSb studied by positron annihilation and photoluminescence. Acta Physica Sinica,
2010, 59(7): 5116-5121.
doi: 10.7498/aps.59.5116
|
| [11] |
Liu Xian-Ming, Li Bin-Cheng, Gao Wei-Dong, Han Yan-Ling. Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers. Acta Physica Sinica,
2010, 59(3): 1632-1637.
doi: 10.7498/aps.59.1632
|
| [12] |
Zang Hang, Wang Zhi-Guang, Pang Li-Long, Wei Kong-Fang, Yao Cun-Feng, Shen Tie-Long, Sun Jian-Rong, Ma Yi-Zhun, Gou Jie, Sheng Yan-Bin, Zhu Ya-Bin. Raman investigation of ion-implanted ZnO films. Acta Physica Sinica,
2010, 59(7): 4831-4836.
doi: 10.7498/aps.59.4831
|
| [13] |
Qin Xi-Feng, Wang Feng-Xiang, Liang Yi, Fu Gang, Zhao You-Mei. Investigation of the lateral spread of Er ions implanted in 6H-SiC. Acta Physica Sinica,
2010, 59(9): 6390-6393.
doi: 10.7498/aps.59.6390
|
| [14] |
Zhou Li-Hong, Zhang Chong-Hong, Li Bing-Sheng, Yang Yi-Tao, Song Yin. Photoluminescence of Ar+ implanted sapphire before and after annealing. Acta Physica Sinica,
2008, 57(4): 2562-2566.
doi: 10.7498/aps.57.2562
|
| [15] |
Zhong Hong-Mei, Chen Xiao-Shuang, Wang Jin-Bin, Xia Chang-Sheng, Wang Shao-Wei, Li Zhi-Feng, Xu Wen-Lan, Lu Wei. Preparation of ZnMnO by ion implantation and its spectral characterization. Acta Physica Sinica,
2006, 55(4): 2073-2077.
doi: 10.7498/aps.55.2073
|
| [16] |
Zhang Xiao-Dong, Lin De-Xu, Li Gong-Ping, You Wei, Zhang Li-Min, Zhang Yu, Liu Zheng-Min. Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions. Acta Physica Sinica,
2006, 55(10): 5487-5493.
doi: 10.7498/aps.55.5487
|
| [17] |
Zhou Yong-Hua, Zhang Yi-Men, Zhang Yu-Ming, Meng Xiang-Zhi. Simulation and analysis of 6H-SiC pn junction ultraviolet photodetector. Acta Physica Sinica,
2004, 53(11): 3710-3715.
doi: 10.7498/aps.53.3710
|
| [18] |
Zhang Ji-Cai, Dai Lun, Qin Guo-Gang, Ying Li-Zhen, Zhao Xin-Sheng. . Acta Physica Sinica,
2002, 51(3): 629-634.
doi: 10.7498/aps.51.629
|
| [19] |
Chen Gui-Bin, Lu Wei, Liao Zhong-Lin, Li Zhi-Feng, Chai Wei-Ying, Shen Xue-Chu, Chen Chang-Ming, Zhu De-Zhang, Hu Jun, Li Ming-Qian. . Acta Physica Sinica,
2002, 51(3): 659-662.
doi: 10.7498/aps.51.659
|
| [20] |
SHANG YE-CHUN, ZHANG YI-MEN, ZHANG YU-MING. MONTE CARLO SIMULATION OF ELECTRON TRANSPORT IN 6H-SiC. Acta Physica Sinica,
2000, 49(9): 1786-1791.
doi: 10.7498/aps.49.1786
|
下载:
