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- Chen Gui-Bin2,
- Lu Wei1,
- Liao Zhong-Lin2,
- Li Zhi-Feng1,
- Chai Wei-Ying1,
- Shen Xue-Chu1,
- Chen Chang-Ming3,
- Zhu De-Zhang3,
- Hu Jun3,
- Li Ming-Qian3
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(1)中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083; (2)中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083;中国科学院上海原子核研究所核分析技术开放实验室,上海201800; (3)中国科学院上海原子核研究所核分析技术开放实验室,上海201800
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[1] Yu Sen, Xu Sheng-Rui, Tao Hong-Chang, Wang Hai-Tao, An Xia, Yang He, Xu Kang, Zhang Jin-Cheng, Hao Yue. Ion implantation induced nucleation and epitaxial growth of high-quality AlN. Acta Physica Sinica, 2024, 73(19): 196101. doi: 10.7498/aps.73.20240674 [2] Ma Li-Ya, Li Yu-Dong, Guo Qi, Ai Er-Ken, Wang Hai-Jiao, Zeng Jun-Zhe. Photoluminescence spectra of 1 MeV electron beam irradiated In0.53Ga0.47As/InP quantum well and bulk materials. Acta Physica Sinica, 2015, 64(15): 154217. doi: 10.7498/aps.64.154217 [3] Zhen Kang, Gu Ran, Ye Jian-Dong, Gu Shu-Lin, Ren Fang-Fang, Zhu Shun-Ming, Huang Shi-Min, Tang Kun, Tang Dong-Ming, Yang Yi, Zhang Rong, Zheng You-Dou. Effect of oxygen implantation on microstructural and optical properties of ZnTe:O intermediate-band photovoltaic materials. Acta Physica Sinica, 2014, 63(23): 237103. doi: 10.7498/aps.63.237103 [4] Su An, Gao Ying-Jun. Light propagation characteristics of one-dimensional photonic crystal with double-barrier quantum well. Acta Physica Sinica, 2012, 61(23): 234208. doi: 10.7498/aps.61.234208 [5] Wang Hua, Xu Bing-She, Meng Wei-Xin, Hao Yu-Ying, Liu Xu-Guang, Xu Hui-Xia. Properties of white organic electroluminescent devices based on a new organic metal complex with quantum well structure. Acta Physica Sinica, 2011, 60(9): 098102. doi: 10.7498/aps.60.098102 [6] Zang Hang, Wang Zhi-Guang, Pang Li-Long, Wei Kong-Fang, Yao Cun-Feng, Shen Tie-Long, Sun Jian-Rong, Ma Yi-Zhun, Gou Jie, Sheng Yan-Bin, Zhu Ya-Bin. Raman investigation of ion-implanted ZnO films. Acta Physica Sinica, 2010, 59(7): 4831-4836. doi: 10.7498/aps.59.4831 [7] Liu Xian-Ming, Li Bin-Cheng, Gao Wei-Dong, Han Yan-Ling. Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers. Acta Physica Sinica, 2010, 59(3): 1632-1637. doi: 10.7498/aps.59.1632 [8] Su Hai-Qiao, Xue Shu-Wen, Chen Meng, Li Zhi-Jie, Yuan Zhao-Lin, Fu Yu-Jun, Zu Xiao-Tao. Effects of Ti ion implantation and post-thermal annealing on the structural and optical properties of ZnS films. Acta Physica Sinica, 2009, 58(10): 7108-7113. doi: 10.7498/aps.58.7108 [9] Zhang Hong-Hua, Zhang Chong-Hong, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong. Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica, 2009, 58(5): 3302-3308. doi: 10.7498/aps.58.3302 [10] Yang Yi-Tao, Zhang Chong-Hong, Zhou Li-Hong, Li Bing-Sheng. A study of damage evolution during annealing of helium-implanted magnesium-aluminate spinel. Acta Physica Sinica, 2008, 57(8): 5165-5169. doi: 10.7498/aps.57.5165 [11] Zhou Li-Hong, Zhang Chong-Hong, Li Bing-Sheng, Yang Yi-Tao, Song Yin. Photoluminescence of Ar+ implanted sapphire before and after annealing. Acta Physica Sinica, 2008, 57(4): 2562-2566. doi: 10.7498/aps.57.2562 [12] Hu Liang-Jun, Chen Yong-Hai, Ye Xiao-Ling, Wang Zhan-Guo. Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation. Acta Physica Sinica, 2007, 56(8): 4930-4935. doi: 10.7498/aps.56.4930 [13] Chen Zhi-Quan, Kawasuso Atsuo. Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica, 2006, 55(8): 4353-4357. doi: 10.7498/aps.55.4353 [14] Zhang Xiao-Dong, Lin De-Xu, Li Gong-Ping, You Wei, Zhang Li-Min, Zhang Yu, Liu Zheng-Min. Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions. Acta Physica Sinica, 2006, 55(10): 5487-5493. doi: 10.7498/aps.55.5487 [15] Zhong Hong-Mei, Chen Xiao-Shuang, Wang Jin-Bin, Xia Chang-Sheng, Wang Shao-Wei, Li Zhi-Feng, Xu Wen-Lan, Lu Wei. Preparation of ZnMnO by ion implantation and its spectral characterization. Acta Physica Sinica, 2006, 55(4): 2073-2077. doi: 10.7498/aps.55.2073 [16] Xu Xiao-Hua, Niu Zhi-Chuan, Ni Hai-Qiao, Xu Ying-Qiang, Zhang Wei, He Zheng-Hong, Han Qin, Wu Rong-Han, Jiang De-Sheng. Photoluminescence study of (GaAs1－xSbx/InyGa1－yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy. Acta Physica Sinica, 2005, 54(6): 2950-2954. doi: 10.7498/aps.54.2950 [17] Tang Nai-Yun, Ji Ya-Lin, Chen Xiao-Shuang, Lu Wei. Effect of proton implantation on photoluminescence of self-assembled InAs/GaAs quantum dots. Acta Physica Sinica, 2005, 54(6): 2904-2909. doi: 10.7498/aps.54.2904 [18] Zhang Ji-Cai, Dai Lun, Qin Guo-Gang, Ying Li-Zhen, Zhao Xin-Sheng. . Acta Physica Sinica, 2002, 51(3): 629-634. doi: 10.7498/aps.51.629 [19] WEI JIAN-HUA, XIE SHI-JIE, MEI LIANG-MO. SUPERLATTICE AND MULTI-QUANTUM-WELL PROPERTIES OF MX COMPOUNDS. Acta Physica Sinica, 2000, 49(11): 2254-2260. doi: 10.7498/aps.49.2254 [20] TU XIAN-HUA, LI DAO-HUO. BLUE-LIGHT ENHANCEMENT EFFECT IN ION IMPLANTED NANO-Si3N4 QUANTUM DOTS. Acta Physica Sinica, 2000, 49(7): 1383-1385. doi: 10.7498/aps.49.1383
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Publishing process
- Received Date:
17 August 2001
- Published Online:
03 April 2005
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