| [1] |
Luo Chang-Wei, Qiu Meng-Lin, Wang Guang-Fu, Wang Ting-Shun, Zhao Guo-Qiang, Hua Qing-Song. Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealing. Acta Physica Sinica,
2020, 69(10): 102901.
doi: 10.7498/aps.69.20200029
|
| [2] |
Zhen Kang, Gu Ran, Ye Jian-Dong, Gu Shu-Lin, Ren Fang-Fang, Zhu Shun-Ming, Huang Shi-Min, Tang Kun, Tang Dong-Ming, Yang Yi, Zhang Rong, Zheng You-Dou. Effect of oxygen implantation on microstructural and optical properties of ZnTe:O intermediate-band photovoltaic materials. Acta Physica Sinica,
2014, 63(23): 237103.
doi: 10.7498/aps.63.237103
|
| [3] |
Qin Xi-Feng, Liang Yi, Wang Feng-Xiang, Li Shuang, Fu Gang, Ji Yan-Ju. Range and annealing behavior of Er ions implanted in SiC. Acta Physica Sinica,
2011, 60(6): 066101.
doi: 10.7498/aps.60.066101
|
| [4] |
Hu Mei-Jiao, Li Cheng, Xu Jian-Fang, Lai Hong-Kai, Chen Song-Yan. Formation and properties of GeOI prepared by cyclic thermal oxidation and annealing processes. Acta Physica Sinica,
2011, 60(7): 078102.
doi: 10.7498/aps.60.078102
|
| [5] |
Zang Hang, Wang Zhi-Guang, Pang Li-Long, Wei Kong-Fang, Yao Cun-Feng, Shen Tie-Long, Sun Jian-Rong, Ma Yi-Zhun, Gou Jie, Sheng Yan-Bin, Zhu Ya-Bin. Raman investigation of ion-implanted ZnO films. Acta Physica Sinica,
2010, 59(7): 4831-4836.
doi: 10.7498/aps.59.4831
|
| [6] |
Liu Xian-Ming, Li Bin-Cheng, Gao Wei-Dong, Han Yan-Ling. Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers. Acta Physica Sinica,
2010, 59(3): 1632-1637.
doi: 10.7498/aps.59.1632
|
| [7] |
Su Hai-Qiao, Xue Shu-Wen, Chen Meng, Li Zhi-Jie, Yuan Zhao-Lin, Fu Yu-Jun, Zu Xiao-Tao. Effects of Ti ion implantation and post-thermal annealing on the structural and optical properties of ZnS films. Acta Physica Sinica,
2009, 58(10): 7108-7113.
doi: 10.7498/aps.58.7108
|
| [8] |
Bi Zhi-Wei, Feng Qian, Hao Yue, Yue Yuan-Zheng, Zhang Zhong-Fen, Mao Wei, Yang Li-Yuan, Hu Gui-Zhou. Effect of Al2O3 dielectric layer thickness on the AlGaN/GaN metal-oxide-semiconductor higher-electron-mobility transistor characteristics. Acta Physica Sinica,
2009, 58(10): 7211-7215.
doi: 10.7498/aps.58.7211
|
| [9] |
Zhang Hong-Hua, Zhang Chong-Hong, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong. Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica,
2009, 58(5): 3302-3308.
doi: 10.7498/aps.58.3302
|
| [10] |
Yang Yi-Tao, Zhang Chong-Hong, Zhou Li-Hong, Li Bing-Sheng. A study of damage evolution during annealing of helium-implanted magnesium-aluminate spinel. Acta Physica Sinica,
2008, 57(8): 5165-5169.
doi: 10.7498/aps.57.5165
|
| [11] |
Feng Qian, Hao Yue, Yue Yuan-Zheng. Study of AlGaN/GaN MOSHEMT device with Al2O3 insulating film. Acta Physica Sinica,
2008, 57(3): 1886-1890.
doi: 10.7498/aps.57.1886
|
| [12] |
Liao Guo-Jin, Yan Shao-Feng, Ba De-Chun. The blue luminescence of cerium doped aluminum oxide thin film. Acta Physica Sinica,
2008, 57(11): 7327-7332.
doi: 10.7498/aps.57.7327
|
| [13] |
Zhou Xian-Ming, Wang Xiao-Song, Li Sai-Nan, Li Jun, Li Jia-Bo, Jing Fu-Qian. Optical transparency of z-cut LiF, Al2O3 and LiTaO3 single crystals under strong shock compression. Acta Physica Sinica,
2007, 56(8): 4965-4970.
doi: 10.7498/aps.56.4965
|
| [14] |
Song Yin, Wang Zhi-Guang, Wei Kong-Fang, Zhang Chong-Hong, Liu Chun-Bao, Zang Hang, Zhou Li-Hong. Effects of annealing on the photoluminescence of He ion implanted sapphire after 230 MeV Pb ion irradiation. Acta Physica Sinica,
2007, 56(1): 551-555.
doi: 10.7498/aps.56.551
|
| [15] |
Zhong Hong-Mei, Chen Xiao-Shuang, Wang Jin-Bin, Xia Chang-Sheng, Wang Shao-Wei, Li Zhi-Feng, Xu Wen-Lan, Lu Wei. Preparation of ZnMnO by ion implantation and its spectral characterization. Acta Physica Sinica,
2006, 55(4): 2073-2077.
doi: 10.7498/aps.55.2073
|
| [16] |
Zhang Xiao-Dong, Lin De-Xu, Li Gong-Ping, You Wei, Zhang Li-Min, Zhang Yu, Liu Zheng-Min. Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions. Acta Physica Sinica,
2006, 55(10): 5487-5493.
doi: 10.7498/aps.55.5487
|
| [17] |
Liu Xiang-Fei, Jiang Chang-Zhong, Ren Feng, Fu Qiang. Optical absorption, Raman spectra and TEM study of Ag nanoparticles formed by ion implantation into a-SiO2. Acta Physica Sinica,
2005, 54(10): 4633-4637.
doi: 10.7498/aps.54.4633
|
| [18] |
Zhang Li, Jiang Chang-Zhong, Ren Feng, Chen Hai-Bo, Shi Ying, Fu Qiang. Optical absorption of nanoclusters by sequentially implanting into SiO2 glass and subsequently annealing in a selected atmosphere. Acta Physica Sinica,
2004, 53(9): 2910-2914.
doi: 10.7498/aps.53.2910
|
| [19] |
Li Xiao-Na, Nie Dong, Dong Chuang, Ma Teng-Cai, Jin Xing, Zhang Zhe. . Acta Physica Sinica,
2002, 51(1): 115-124.
doi: 10.7498/aps.51.115
|
| [20] |
Chen Gui-Bin, Lu Wei, Liao Zhong-Lin, Li Zhi-Feng, Chai Wei-Ying, Shen Xue-Chu, Chen Chang-Ming, Zhu De-Zhang, Hu Jun, Li Ming-Qian. . Acta Physica Sinica,
2002, 51(3): 659-662.
doi: 10.7498/aps.51.659
|
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