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利用脉冲辉光放电的方法, 在硅片上采用不同的沉积工艺制备了含氢类金刚石膜层, 并采用Raman光谱和X射线光电子能谱(XPS)对膜层进行表征. 用Raman光谱仪在波长为325 nm的紫外光源的激励下观察膜层的键结构. 紫外Raman光谱对含氢类金刚石膜是非常有用的, 它能有效避免可见光Raman光谱测量时的荧光干扰, 清晰地得到膜层的D峰和G峰. 同时利用XPS分析得到膜层的 sp3键含量, 并与Raman光谱所得数据进行比较. 通过Raman光谱和XPS分析可以发现, 在紫外光源的激励下, 膜层的G峰峰位向高频移方向移动, G峰峰位、I(D)/I(G), G峰半高宽和sp3键含量之间存在一定的关系.The hydrogenous diamond-like carbon (DLC) films deposited on Si substrates using pulsed glow discharge method are investigated using Raman spectroscopy and X-ray photoelectron spectroscopy method. The UV Raman spectrum for excitation wavelength is 325 nm. UV Raman is particularly useful for hydrogenous DLC, as it gives clear measurements in the D and G peak spectral region even for highly hydrogenated samples, for which the visible Raman spectra are overshadowed by photoluminescence. The sp3 bonding of hydrogenous DLC film can be effectively studied by X-ray photoelectron spectroscopy method, and the data from the X-ray photoelectron spectroscopy method are compared with Raman results. It is found that G peak shows a shift to ward a higher wave under UV excitation. For the G peak, I(D)/I(G), G-FWHM and sp3, there exists a relationship among them.
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Keywords:
- pulsed glow discharge /
- DLC /
- Raman spectrum /
- X-ray photoelectron spectroscopy
[1] Wang Y J, Li H X, Ji L, Liu X H, Wu Y X, Zhou H D, Chen J M 2012 Acta Phys. Sin. 61 056103 (in Chinese) [王永军, 李红轩, 吉利, 刘晓红, 吴艳霞, 周惠娣, 陈建敏 2012 61 056103]
[2] Lifshitz Y 1999 Diamond Rel. Mater. 8 1659
[3] Morshed M M, Cameron D C, McNamara B P, Hashmi M S J 2005 J. Mater. Process. Technol. 169 222
[4] Hauert R 2003 Diamond Relat. Mater. 12 589
[5] Casiraghi C, Robertson J, Ferrari A C 2006 Materials Today 1-2 10
[6] Zhao D C, Ren N, Ma Z J, Qiu J W, Xiao G J, Wu S H 2008 Acta Phys. Sin. 57 1935 (in Chinese) [赵栋才, 任妮, 马占吉, 邱家稳, 肖更竭, 武生虎 2008 57 1935]
[7] Zhou B, Wang L, Mehta N 2006 J. Micromech. Microeng. 16 7
[8] Dearnaley G, Arps J H 2005 Surf. Coat. Technol. 200 7
[9] Tomcik B 2002 Diamond Relat. Mater. 11 1409
[10] Vercammen K, Meneve J, Dekempeneer E 1999 Surf. Coat. Technol. 121-121 11
[11] Staryga E, Bak G W, Dluzniewski M 2004 Vacuum 74 2
[12] Dai Y F, Jiang M F, Yang Y S, Zhou Y 2011 Acta Phys. Sin. 60 118101 (in Chinese) [戴永丰, 江美福, 杨亦赏, 周杨 2011 60 118101]
[13] Small J P, Shi L, Kim P 2003 Solid State Commun. 127 181
[14] Occelli F, Loubeyre P, Letoullec R 2003 Nat. Mater. 2 151
[15] Pichler T, Kuzmany H, Katura H, Achiba Y 2001 Phys. Rev. B63 140301
[16] Jacob W, Moller W 1993 Appl. Phys. Lett. 63 1771
[17] Robertson J 2002 Mater. Sci. Eng. R37 129
[18] Ferrari A C, Robertson J 2001 Phys. Rev. B 64 075414
[19] Chu P K, Li L H 2006 Mater. Chem. Phys. 96 253
[20] Cheng Y H, Tay B K, Lau S P, Shi X, Qiao X L, Chen J G, Wu Y P, Xie C S 2001 Appl. Phys. A 73 341
[21] Chen M W 2008 M. S. Dissertation (Xiamen: Xiamen University) (in Chinese) [刘明文 2008 硕士学位论文 (厦门: 厦门大学)]
[22] Quaeyhaegens C, Knuyt G 1995 Thin Solid Films 258 170
[23] Hatada R, Baba K 1999 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 148 655
[24] Donnelly K, Dowling D P, McConnell M L, Flood R V 1999 Diamond Relat. Mater. 8 538
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[1] Wang Y J, Li H X, Ji L, Liu X H, Wu Y X, Zhou H D, Chen J M 2012 Acta Phys. Sin. 61 056103 (in Chinese) [王永军, 李红轩, 吉利, 刘晓红, 吴艳霞, 周惠娣, 陈建敏 2012 61 056103]
[2] Lifshitz Y 1999 Diamond Rel. Mater. 8 1659
[3] Morshed M M, Cameron D C, McNamara B P, Hashmi M S J 2005 J. Mater. Process. Technol. 169 222
[4] Hauert R 2003 Diamond Relat. Mater. 12 589
[5] Casiraghi C, Robertson J, Ferrari A C 2006 Materials Today 1-2 10
[6] Zhao D C, Ren N, Ma Z J, Qiu J W, Xiao G J, Wu S H 2008 Acta Phys. Sin. 57 1935 (in Chinese) [赵栋才, 任妮, 马占吉, 邱家稳, 肖更竭, 武生虎 2008 57 1935]
[7] Zhou B, Wang L, Mehta N 2006 J. Micromech. Microeng. 16 7
[8] Dearnaley G, Arps J H 2005 Surf. Coat. Technol. 200 7
[9] Tomcik B 2002 Diamond Relat. Mater. 11 1409
[10] Vercammen K, Meneve J, Dekempeneer E 1999 Surf. Coat. Technol. 121-121 11
[11] Staryga E, Bak G W, Dluzniewski M 2004 Vacuum 74 2
[12] Dai Y F, Jiang M F, Yang Y S, Zhou Y 2011 Acta Phys. Sin. 60 118101 (in Chinese) [戴永丰, 江美福, 杨亦赏, 周杨 2011 60 118101]
[13] Small J P, Shi L, Kim P 2003 Solid State Commun. 127 181
[14] Occelli F, Loubeyre P, Letoullec R 2003 Nat. Mater. 2 151
[15] Pichler T, Kuzmany H, Katura H, Achiba Y 2001 Phys. Rev. B63 140301
[16] Jacob W, Moller W 1993 Appl. Phys. Lett. 63 1771
[17] Robertson J 2002 Mater. Sci. Eng. R37 129
[18] Ferrari A C, Robertson J 2001 Phys. Rev. B 64 075414
[19] Chu P K, Li L H 2006 Mater. Chem. Phys. 96 253
[20] Cheng Y H, Tay B K, Lau S P, Shi X, Qiao X L, Chen J G, Wu Y P, Xie C S 2001 Appl. Phys. A 73 341
[21] Chen M W 2008 M. S. Dissertation (Xiamen: Xiamen University) (in Chinese) [刘明文 2008 硕士学位论文 (厦门: 厦门大学)]
[22] Quaeyhaegens C, Knuyt G 1995 Thin Solid Films 258 170
[23] Hatada R, Baba K 1999 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 148 655
[24] Donnelly K, Dowling D P, McConnell M L, Flood R V 1999 Diamond Relat. Mater. 8 538
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