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The Mn-N codoped ZnO thin films are fabricated on quartz glass substrates using the radio-frequency magnetron sputtering technique together with the direct N+ ion-implantation. The effects of annealing temperature on microstructure and room-temperature ferromagnetism of the thin films are investigated. The results indicate that both divalent Mn2+ and trivalent N3- ions are incorporated into ZnO lattice. As the annealing temperature increases, the lattice distortion induced by N+ ion-implantation can decrease, and the N3- may escape from the film, which results in the reducing of acceptor (NO) concentration. Ferromagnetism is observed in the (Mn,N)-codoped ZnO thin film at 300 K and found to be the sensitive to the acceptor concentration. The mechanism of room-temperature ferromagnetism in the ZnO:(Mn, N) is discussed based on the bound magnetic polaron model.
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Keywords:
- ZnO:Mn thin films /
- ion-implantation /
- crystal structure /
- room-temperature ferromagnetism
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[1] Look D C 2001 Mater. Sci. Eng. B 80 383
[2] Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, Molnar S V, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488
[3] Dietl T, Ohno H, Matsukura F, Clibert J, Ferrand D 2000 Science 287 1019
[4] Souza T M, Cunha Lima da I C, Boselli M A 2008 Appl. Phys. Lett. 92 152511
[5] Zhao L, Lu P F, Yu Z Y, Guo X T, Shen Y, Ye H, Yuan G F, Zhang L 2010 J. Appl. Phys. 108 113924
[6] Zou C W, Wang H J, Yi M L, Li M, Liu C S, Guo L P, Fu D J, Kang T W 2010 Appl. Surf. Sci. 256 2453
[7] Qiu D J, Wang J, Ding K B, Shi H J, Jia Y 2008 Acta Phys. Sin. 57 5249 (in Chinese) [邱东江, 王俊, 丁扣宝, 施红军, 郏寅 2008 57 5249]
[8] Lu Z L, Yan G Q, Wang S, Zou W Q, Mo Z R, Lü L Y, Zhang F M, Du Y W, Xu M X, Xia Z H 2008 J. Appl. Phys. 104 033919
[9] Yang Z, Liu J L, Biasini M, Beyermann W P 2008 Appl. Phys. Lett. 92 042111
[10] Yan H L, Zhong X L, Wang J B, Huang G J, Ding S L, Zhou G C, Zhou Y C 2007 Appl. Phys. Lett. 90 082503
[11] Xu Q Y, Schmidt H, Hartmann L, Hochmuth H, Lorenz M, Setzer A, Esquinazi P, Meinecke C, Grundmann M 2007 Appl. Phys. Lett. 91 092503
[12] Wang Q, Sun Q, Jena P, Kawazoe K 2004 Phys. Rev. B 70 052408
[13] Zou W Q, Lu Z L, Wang S, Liu Y, Lu L, Li L, Zhang F M, Dou Y W 2009 Acta Phys. Sin. 58 5763 (in Chinese) [邹文琴, 路忠林, 王申, 刘圆, 陆路, 郦莉, 张凤鸣, 都有为 2009 58 5763]
[14] Xu H Y, Liu Y C, Xu C S, Liu Y X, Shao C L 2006 Appl. Phys. Lett. 88 242502
[15] Peng L P, Fang L, Yang X F, Li Y J, Huang Q L, Wu F, Kong C Y 2009 J. Alloys Compd. 484 576
[16] Samanta K, Bhattacharya P, Katiyar R S, Lwamoto W, Pagliuso P G, Rettori C 2006 Phys. Rev. B 73 245213
[17] Asmar A R, Atanas J P, Ajaka M, Zaatar Y, Ferblantier G, Sauvajol J L, Jabbour J, Juillaget S, Foucaran A 2005 J. Cryst. Growth 279 399
[18] Kaschner A, Haboeck U, Martin S, Matthias S, Kaczmarczyk G, Hoffmann A, Thomsen C, Zeuner Z, Alves H R, Hofmann D M, Meyer B K 2002 Appl. Phys. Lett. 80 1909
[19] Friedrich F, Gluba M A, Nickel N H 2009 Appl. Phys. Lett. 95 141903
[20] Wang J B, Zhong H M, Li Z F, Liu W 2006 Appl. Phys. Lett. 88 101913
[21] Bundesmann C, Ashkenov N, Shubert M, Spemann D, Butz T, Kaidashev E M, Lorenz M, Grundmann M 2003 Appl. Phys. Lett. 83 1974
[22] Wang J B, Huang G J, Zhong X L, Sun L Z, Zhou T C, Liu E H 2006 Appl. Phys. Lett. 88 252502
[23] Yadav H K, Sreenivas K, Katiyar R S, Gupta V 2007 J. Appl. D: Appl. Phys. 40 6005
[24] Hu Y M, Wang C Y, Lee S S, Han T C, Chou W Y, Chen G J 2011 J. Raman Spectrosc. 42 434
[25] He Q B, Xu J Y, Li X H, Kamzin A, Kamzina L 2007 Chin. Phys. Lett. 24 3500
[26] Cong C J, Liao L, Liu Q Y, Li J C, Zhang K L 2006 Nanotechnology 17 1520
[27] Tang K, Gu S L, Zhu S M, Liu J G, Chen H, Ye J D, Zhang R, Zheng Y D 2009 Appl. Phys. Lett. 95 192106
[28] Yang H J, Zhao L Y, Zhang Y J, Wang Y X, Liu H L, Wei M B 2007 Solid State Commun. 143 566
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