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Chen Cui-Hong, Li Zhan-Kui, Wang Xiu-Hua, Li Rong-Hua, Fang Fang, Wang Zhu-Sheng, Li Hai-Xia. Development of high performance PIN-silicon detector and its application in radioactive beam physical experiment. Acta Physica Sinica,
2023, 72(12): 122902.
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Liu Cheng, Li Ming, Wen Zhang, Gu Zhao-Yuan, Yang Ming-Chao, Liu Wei-Hua, Han Chuan-Yu, Zhang Yong, Geng Li, Hao Yue. Establishment of composite leakage model and design of GaN Schottky barrier diode with stepped field plate. Acta Physica Sinica,
2022, 71(5): 057301.
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Deng Xiao-Qing, Deng Lian-Wen, He Yi-Ni, Liao Cong-Wei, Huang Sheng-Xiang, Luo Heng. Leakage current model of InGaZnO thin film transistor. Acta Physica Sinica,
2019, 68(5): 057302.
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She Yan-Chao, Zhang Wei-Xi, Wang Ying, Luo Kai-Wu, Jiang Xiao-Wei. Effect of oxygen vacancy defect on leakage current of PbTiO3 ferroelectric thin film. Acta Physica Sinica,
2018, 67(18): 187701.
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Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu. A Model of channel current for uniaxially strained Si NMOSFET. Acta Physica Sinica,
2015, 64(19): 197301.
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Li Wei-Qin, Liu Ding, Zhang Hai-Bo. Leakage current characteristics of the insulating sample under high-energy electron irradiation. Acta Physica Sinica,
2014, 63(22): 227303.
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Zhang Yan, Wang Zeng-Mei, Chen Yun-Fei, Guo Xin-Li, Sun Wei, Yuan Guo-Liang, Yin Jiang, Liu Zhi-Guo. Friction and wear performance of the 0.5Ba(Ti0.8Zr0.2)O3-0.5(Ba0.7Ca0.3)TiO3 piezoelectric film. Acta Physica Sinica,
2013, 62(6): 066802.
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Ren Jian, Yan Da-Wei, Gu Xiao-Feng. Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2013, 62(15): 157202.
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Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Li Yu-Chen. Analytical modeling for drain current of strained Si NMOSFET. Acta Physica Sinica,
2013, 62(23): 237103.
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Wen Juan-Hui, Yang Qiong, Cao Jue-Xian, Zhou Yi-Chun. Strain control of the leakage current of the ferroelectric thin films. Acta Physica Sinica,
2013, 62(6): 067701.
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Chen Guo-Yun, Xin Yong, Huang Fu-Cheng, Wei Zhi-Yong, Lei Sheng-Jie, Huang San-Bo, Zhu Li, Zhao Jing-Wu, Ma Jia-Yi. Performances of a boron-lined ionization chamber used in neutron/-ray mixed field of reactors. Acta Physica Sinica,
2012, 61(8): 082901.
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Mao Chao-Liang, Dong Xian-Lin, Wang Gen-Shui, Yao Chun-Hua, Cao Fei, Cao Sheng, Yang Li-Hui, Wang Yong-Ling. Grain size dependence of the dielectric properties of Ba0.70Sr0.30TiO3 ceramics and its mechanisms. Acta Physica Sinica,
2009, 58(8): 5784-5789.
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Wang Xiu-Zhang, Liu Hong-Ri. Enhanced ferroelectricity of Pb(Zr0.5Ti0.5)O3 film by the introduction of La0.3Sr0.7TiO3 template layer. Acta Physica Sinica,
2007, 56(3): 1735-1740.
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Tang Qiu-Wen, Shen Ming-Rong, Fang Liang. Comparison of temperature-dependent dielectric characteristic in two different (Ba,Sr)TiO3 films. Acta Physica Sinica,
2006, 55(3): 1346-1350.
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Lu Xiao, Wu Chuan-Gui, Zhang Wan-Li, Li Yan-Rong. Dielectric breakdown of BST thin films prepared by RF sputtering. Acta Physica Sinica,
2006, 55(5): 2513-2517.
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Jia Jian-Feng, Huang Kai, Pan Qing-Tao, He De-Yan. Structures and dielectric properties of (Ba0.7Sr0.3)TiO3/LaNiO3 hetero-structure films prepared by sol-gel technique. Acta Physica Sinica,
2005, 54(9): 4406-4410.
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Zhou Xiao-Li, Du Pi-Yi. CaCu33Ti44O1212 films prepared by magnetron s puttering. Acta Physica Sinica,
2005, 54(4): 1809-1813.
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Dong Zheng-Gao, Shen Ming-Rong, Xu Run, Gan Zhao-Qiang, Ge Shui-Bing. . Acta Physica Sinica,
2002, 51(12): 2896-2900.
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LIU HONG-XIA, HAO YUE. STUDY ON STRESS INDEUCED LEAKAGE CURRENT TRANSIENT CHARACTERISTICS IN THIN GATE OXIDE. Acta Physica Sinica,
2001, 50(9): 1769-1773.
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CHENG JIAN-GONG, MENG XIANG-JIAN, TANG JUN, GUO SHAO-LING, CHU JUN-HAO. STRUCTURE AND FERROELECTRICITY OF Ba0.8Sr0.2TiO3 THIN FILMS PREPARED BY A MODIFIED SOL-GEL PROCESSING. Acta Physica Sinica,
2000, 49(5): 1006-1009.
doi: 10.7498/aps.49.1006
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