氮离子轰击能量对ta-C:N薄膜结构的影响

韩亮; 邵鸿翔; 何亮; 陈仙; 赵玉清

doi:10.7498/aps.61.106803

摘要

利用磁过滤真空阴极电弧技术制备了sp3键含量不小于80%的四面体非晶碳薄膜(ta-C), 然后通过氮离子束改性技术制备了氮掺杂的四面体非晶碳(ta-C:N)薄膜. 利用Raman光谱和X射线光电子能谱对薄膜结构的分析,研究了氮离子轰击能量对ta-C:N薄膜结构的影响. 氮离子对ta-C薄膜的轰击,形成了氮掺杂的ta-C:N薄膜. 氮离子轰击诱导了薄膜中sp3键向sp2键转化, 以及CN键的形成.在ta-C:N薄膜中,氮掺杂的深度和浓度随着氮离子能量的增大而增大. ta-C:N薄膜中sp2键的含量和sp2键团簇的尺寸随着氮离子轰击能量的增大而增加; 在ta-C:N薄膜中, CN键主要由C–N键和C＝N键构成, C–N 键的含量随着氮离子轰击能量的增大而减小,但是C＝N 键含量随着氮离子轰击能量的增大而增大.在ta-C:N薄膜中不含有CN键结构.

关键词:

Abstract

The tetrahedral amorphous carbon (ta-C) films with more than 80% sp3 in fraction are deposited by the filtered cathode vacuum arc technique. Then the energetic nitrogen (N) ions are used to bombard the ta-C films to fabricate nitrogenated tetrahedral amorphous carbon (ta-C:N) films. The composition and the structure of the films are analyzed by visible Raman spectrum and X-ray photoelectron spectroscopy. The result shows that the bombardment of energetic nitrogen ions can form CN bonds, convert CC bonds into C＝C bonds, and increase the size of sp2 cluster. The CN bonds are composed of C＝N bonds and CN bonds. The content of C＝N bonds increases with the N ion bombardment energy increasing, but the content of CN bonds is inversely proportional to the increase of nitrogen ion energy. In addition, CN bonds do not exist in the films.

Keywords:

nitrogenated tetrahedral amorphous carbon /
nitrogen ion /
visible Raman spectrum /
X-ray photoelectron spectroscopy

作者及机构信息

1.
西安电子科技大学技术物理学院, 西安 710071;

2.
洛阳理工学院, 洛阳 471023;

3.
西安交通大学电子与信息工程学院, 西安 710049

基金项目: 陕西省13115科技创新工程重大科技专项(批准号: 2009DKG-29)和中央高校基本科研业务费专项资金资助的课题.

Authors and contacts

1.
School of Technical Physics, Xidian University, Xi'an 710071, China;

2.
Luoyang Institute of Science and Technology, LuoYang 471023, China;

3.
School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China

Funds: Project supported by the Key Program of 3115 Science and Technology Originality Innovation Project of Shaanxi Province, China (Grant No. 2009ZDKG-29) and the Fundamental Research Funds for the Central Universities, China.

参考文献

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[15]	Colthup N B, Daly L H, Wiberly S E 1990 Introduction to Infrared and Raman Spectroscopy (3rd Ed.) (New York: Academic Press)
[16]	Chowdhury A K M S, Cameron D C, Hashmi M S J 1998 Thin Solid Films 332 62
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[18]	Merel P, Tabbal M, Chaker M, Moisa S, Margot 1998 J. Appl. Surf. Sci. 136 105
[19]	Ripalda J M, Roman E, Galan L 2003 J. Chem. Phys. 118 3748
[20]	Yu G H, Zeng L R, Zhu F W, Chai C L, Lai W Y 2001 J. Appl. Phys. 90 4039
[21]	Zhu J Q, Han J C, Han X, Schiaberginaki H, Wang J Z 2008 J. Appl. Phys. 104 013512
[22]	Das D, Chen K H, Chattopadhyay S, Chattopadhyay S Chen L C 2002 J. Appl. Phys. 91 4944
[23]	Papakonstantinou P, Lemoine P 2001 J. Phys. Condens. Matter 13 2971
[24]	Ronning C, Feldermann H, Merk R, Hofsäss H 1998 Phys. Rev. B 58 2207
[25]	Hellgren N, Guo J, Sathe C, Agui A, Nordgren J, Luo Y, \AAgren H, Sundgren J E 2001 Appl. Phys. Lett. 79 4348
[26]	Hofsäss H, Eldermann H F, Merk R, Sebastian M, Ronning C 1998 J. Appl. Phys. A 66 153
[27]	Majumdar A, Schäfer J, Mishra P, Ghose D, Meichsner J, Hippler R 2007 Surf. Coat. Technol. 201 6437
[28]	McCann R, Roy S S, Papakonstantinou P, Bain M F, Gamble H S, McLaughlin J A 2005 Thin Solid Films 482 34
[29]	Bhattacharyya S, Hong J, Turban G 1998 J. Appl. Phys. 83 3922
[30]	Kaukonen M, Nieminen R M, Poykko S, Seitsonen A P 1999 Phys. Rev. Lett. 83 5346

施引文献

[1]	Ander A, Ander S, Brown I G 1995 Plasma Source Sci. Technol. 4 1
[2]	Zhu J Q, Wang J H, Meng S H, Han J C, Zhang L S 2004 Acta Phys. Sin. 53 1151 (in Chinese) [朱嘉琦, 王景贺, 孟松鹤, 韩杰才, 张连升 2004 53 1151]
[3]	Liang F, Yan X J 1999 Acta Phys. Sin. 48 1095 (in Chinese) [梁风, 严学俭 1999 48 1095]
[4]	Satyanarayana B S, Hart A, Miline W I, Robertson J 1998 Diamond Relat. Mater. 7 656
[5]	Gao W, Gong S L, Zhu J Q, Ma G J 2011 Acta Phys. Sin. 60 027104 (in Chinese) [高巍, 巩水利, 朱嘉琦, 马国佳 2011 60 027104]
[6]	Panwar O S, Khan M A, Satyanarayana B S, Bhattacharyya R, Mehta B R, Kumar S, Ishpal I 2010 J. Vac. Sci. Technol. B 28 411
[7]	Panwar O S, Alim M K, Kumar M, Shivaprasad S M, Satyanarayana B S, Dixit P N, Bhattacharyya R, Khan M Y 2008 Thin Solid Films 516 2331
[8]	Panwar O S, Deb B, Satyanarayana B S, Khan M A, Bhattacharyya R, Pal A K 2005 Thin Solid Films 472 180
[9]	Polo M C, Andujar J L, Hart A, Robertson J, Milne W I 2000 Diamond Relat. Mater. 9 663
[10]	Panwar O S, Alim K M, Kumar S, Basu A, Mehta B R, Kumar S, Ishpal I 2010 Surf. Coat. Technol. 205 2126
[11]	Prawer S, Nugent K W, Lifshitz Y 1996 Diamond Relat. Mater. 5 433
[12]	Zhang X W, Ke N, Cheung W Y 2003 Diamond Relat. Mater. 12 1
[13]	Wixom M K 1990 J. Am. Ceram. Soc. 73 1973
[14]	Cheng Y H, Tay B K, Lau S P 2001 Diamond Relat. Mater. 10 2137
[15]	Colthup N B, Daly L H, Wiberly S E 1990 Introduction to Infrared and Raman Spectroscopy (3rd Ed.) (New York: Academic Press)
[16]	Chowdhury A K M S, Cameron D C, Hashmi M S J 1998 Thin Solid Films 332 62
[17]	Kaufman J H, Metin S, Saperstein D D 1989 Phys. Rev. B 39 13053
[18]	Merel P, Tabbal M, Chaker M, Moisa S, Margot 1998 J. Appl. Surf. Sci. 136 105
[19]	Ripalda J M, Roman E, Galan L 2003 J. Chem. Phys. 118 3748
[20]	Yu G H, Zeng L R, Zhu F W, Chai C L, Lai W Y 2001 J. Appl. Phys. 90 4039
[21]	Zhu J Q, Han J C, Han X, Schiaberginaki H, Wang J Z 2008 J. Appl. Phys. 104 013512
[22]	Das D, Chen K H, Chattopadhyay S, Chattopadhyay S Chen L C 2002 J. Appl. Phys. 91 4944
[23]	Papakonstantinou P, Lemoine P 2001 J. Phys. Condens. Matter 13 2971
[24]	Ronning C, Feldermann H, Merk R, Hofsäss H 1998 Phys. Rev. B 58 2207
[25]	Hellgren N, Guo J, Sathe C, Agui A, Nordgren J, Luo Y, \AAgren H, Sundgren J E 2001 Appl. Phys. Lett. 79 4348
[26]	Hofsäss H, Eldermann H F, Merk R, Sebastian M, Ronning C 1998 J. Appl. Phys. A 66 153
[27]	Majumdar A, Schäfer J, Mishra P, Ghose D, Meichsner J, Hippler R 2007 Surf. Coat. Technol. 201 6437
[28]	McCann R, Roy S S, Papakonstantinou P, Bain M F, Gamble H S, McLaughlin J A 2005 Thin Solid Films 482 34
[29]	Bhattacharyya S, Hong J, Turban G 1998 J. Appl. Phys. 83 3922
[30]	Kaukonen M, Nieminen R M, Poykko S, Seitsonen A P 1999 Phys. Rev. Lett. 83 5346

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