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An inversion-channel electron mobility model for InxGa1-xAs n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with Al2O3 as gate dielectric is established by considering main scattering mechanisms of bulk scattering, Coulomb scattering of interface charges and interface- roughness scattering of the Al2O3/InxGa1-xAs interface. The simulated results are in good agreement with the experimental data. Analyses by using the model indicate that the total electron mobility is mainly limited by the Coulomb scattering of interface charges under weak and medium effective fields and by the interface-roughness scattering under strong effective fields. Therefore, the effective approaches of enhancing the inversion-channel electron mobility are to reduce the interface-state density and roughness of the Al2O3/InxGa1-xAs interface, to properly increase the in content and control the doping concentration of the InxGa1-xAs channel to a suitable value.
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Keywords:
- InGaAs /
- MOSFET /
- inversion-channel electron mobility /
- scattering mechanisms
[1] Zhang Z F, Zhang H M, Hu H Y, Xuan R Y, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志锋, 张鹤鸣, 胡辉勇, 宣荣喜, 宋建军 2009 58 4948]
[2] Zou X 2007 Ph.D. Dissertation (Wuhan: Huazhong University of Science and Technology) (in Chinese) [邹晓 2007 博士学位论文 (武汉: 华中科技大学)]
[3] Khairurrijal, Mizubayashi W, Miyazaki S, Hirose M 2000 J. Appl. Phys. 87 3000
[4] Larcher L, Paccagnella A, Ghidini G 2001 IEEE Transactions on Electron Device 48 271
[5] Hansen K, Brandbyge M 2004 J. Appl. Phys. 95 3582
[6] Zhang X F, Qiu Y Z, Zhang Z J, Chen Y, Huang J, Wang Z L, Xu J P 2010 Research & Progress of Solid State Electronics 30 180 (in Chinese) [张雪峰, 邱云珍, 张振娟, 陈云, 黄静, 王志亮, 徐静平 2010 固体电子学研究与进展 30 180]
[7] Hill R J W, Droopad R, Moran D A J, Li X, Zhou H, Macint Y D, Thoms S, Ignatova O, Asenov A, Rajagopalan K, Fejes P, Thayne I G, Passlack M 2008 Electronics Letters 44 498
[8] Xuan Y, Wu Y Q, Lin H C, Shen T, Ye P D 2007 IEEE Electron Device Letters 28 935
[9] Rim K, Koester S, Hargrove M, Chu J, Mooney P M, Ott J, Kanarsky T, Ronsheim P, Ieong M, Grill A, Wong H S P 2001 Tech. Dig. VLSI Symp. 4-89114-012-7 59
[10] Lee C H, Nishimura T, Saido N, Nagashio K, Kita K, Toriumi A 2009 Tech. Dig. in. Electron Devices Meet Baltimore, MD, USA, Dec. 7-9 2009 p1(Piscataway, NJ, USA: IEEE)
[11] O’Regan T P, Fischetti M V, Sorée B, Jin S, Magnus W, Meuris M 2010 Journal of Applied Physics 108 103705
[12] Wang W K, Hwang J C M, Xuan Y, Ye P D 2011 IEEE Transactions on Electro Devices 58 1972
[13] Sotoodeh M, Khalid A H, Rezazadeh A A 2000 J. Appl. Phys. 87 2890
[14] Zou X, Xu J P, Chen W B, Wu H P 2005 Micro Electronics 35 465 (in Chinese) [邹晓, 徐静平, 陈卫兵, 吴海平 2005 微电子学 35 465]
[15] Li B, Liu H X, Yuan B, Li J, Lu F M 2011 Acta Phys. Sin. 60 017202-1 (in Chinese) [李斌, 刘红侠, 袁博, 李劲, 卢凤铭 2011 60 017202-1]
[16] Stephen K P, Neil G, James M M, Bernstein J, Scozzie C J, Lelis A 2002 J. Appl. Phys. 92 4053
[17] Zhang X F, Xu J P, Zou X, Zhang L J 2006 Chinese Journal of Semiconductors 27 2000 (in Chinese) [张雪峰, 徐静平, 邹晓, 张兰君 2006 半导体学报 27 2000]
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[1] Zhang Z F, Zhang H M, Hu H Y, Xuan R Y, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志锋, 张鹤鸣, 胡辉勇, 宣荣喜, 宋建军 2009 58 4948]
[2] Zou X 2007 Ph.D. Dissertation (Wuhan: Huazhong University of Science and Technology) (in Chinese) [邹晓 2007 博士学位论文 (武汉: 华中科技大学)]
[3] Khairurrijal, Mizubayashi W, Miyazaki S, Hirose M 2000 J. Appl. Phys. 87 3000
[4] Larcher L, Paccagnella A, Ghidini G 2001 IEEE Transactions on Electron Device 48 271
[5] Hansen K, Brandbyge M 2004 J. Appl. Phys. 95 3582
[6] Zhang X F, Qiu Y Z, Zhang Z J, Chen Y, Huang J, Wang Z L, Xu J P 2010 Research & Progress of Solid State Electronics 30 180 (in Chinese) [张雪峰, 邱云珍, 张振娟, 陈云, 黄静, 王志亮, 徐静平 2010 固体电子学研究与进展 30 180]
[7] Hill R J W, Droopad R, Moran D A J, Li X, Zhou H, Macint Y D, Thoms S, Ignatova O, Asenov A, Rajagopalan K, Fejes P, Thayne I G, Passlack M 2008 Electronics Letters 44 498
[8] Xuan Y, Wu Y Q, Lin H C, Shen T, Ye P D 2007 IEEE Electron Device Letters 28 935
[9] Rim K, Koester S, Hargrove M, Chu J, Mooney P M, Ott J, Kanarsky T, Ronsheim P, Ieong M, Grill A, Wong H S P 2001 Tech. Dig. VLSI Symp. 4-89114-012-7 59
[10] Lee C H, Nishimura T, Saido N, Nagashio K, Kita K, Toriumi A 2009 Tech. Dig. in. Electron Devices Meet Baltimore, MD, USA, Dec. 7-9 2009 p1(Piscataway, NJ, USA: IEEE)
[11] O’Regan T P, Fischetti M V, Sorée B, Jin S, Magnus W, Meuris M 2010 Journal of Applied Physics 108 103705
[12] Wang W K, Hwang J C M, Xuan Y, Ye P D 2011 IEEE Transactions on Electro Devices 58 1972
[13] Sotoodeh M, Khalid A H, Rezazadeh A A 2000 J. Appl. Phys. 87 2890
[14] Zou X, Xu J P, Chen W B, Wu H P 2005 Micro Electronics 35 465 (in Chinese) [邹晓, 徐静平, 陈卫兵, 吴海平 2005 微电子学 35 465]
[15] Li B, Liu H X, Yuan B, Li J, Lu F M 2011 Acta Phys. Sin. 60 017202-1 (in Chinese) [李斌, 刘红侠, 袁博, 李劲, 卢凤铭 2011 60 017202-1]
[16] Stephen K P, Neil G, James M M, Bernstein J, Scozzie C J, Lelis A 2002 J. Appl. Phys. 92 4053
[17] Zhang X F, Xu J P, Zou X, Zhang L J 2006 Chinese Journal of Semiconductors 27 2000 (in Chinese) [张雪峰, 徐静平, 邹晓, 张兰君 2006 半导体学报 27 2000]
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