超短沟道MOSFET电势的二维半解析模型

韩名君; 柯导明; 迟晓丽; 王敏; 王保童

doi:10.7498/aps.62.098502

摘要

本文根据超短沟道MOSFET的工作原理, 在绝缘栅和空间电荷区引入两个矩形源, 提出了亚阈值下电势二维分布的定解问题. 通过半解析法和谱方法相结合, 首次得到了该定解问题的二维半解析解, 解的结果是一个特殊函数, 为无穷级数表达式. 该模型的优点是避免了数值分析时的方程离散化, 表达式不含适配参数、运算量小、精度与数值解的精度相同, 可直接用于电路模拟程序. 文中计算了沟道长度是45—22 nm的MOSFET电势、表面势和阈值电压. 结果表明, 新模型与Medici数值分析结果相同.

关键词:

半解析法 /
电势 /
阈值电压 /
MOSFET

Abstract

Based on the principle of ultra-short channel MOSFET, a definite solution of potential is proposed by introducing two rectangular sources between the insulated gate and the space-charge region. By using the semi-analytical method and the spectral method, the 2D semi-analytical solution has been obtained for the first time as faras we know. The solution is a special function for the infinite series expressions. The most advantage of this model is that it can not only be calculated directly without numerical analysis but also keep the same accuracy as that of numerical solution. In addition, this model, which can be directly used in circuit simulation, has the characteristics that in its expression there is no adapter parameter with small calculating amount. The potential, surface potential and threshold of 45—22 nm MOSFET have been calculated in the frame of this model. It is shown that the calculated results are identical with Medici.

Keywords:

作者及机构信息

1.
安徽大学电子信息工程学院, 合肥 230061;

2.
芜湖职业技术学院电子信息工程系, 芜湖 241000

基金项目: 国家自然科学基金(批准号:61076086)和高等学校博士学科点专项科研基金(批准号:2103401110008)资助的课题.

Authors and contacts

1.
Institute of Electronics and Information, Anhui University, Hefei 230601, China;

2.
Department of Electronics and Information, Wuhu Institute of Technology, Wuhu 241000, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61076086), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 2103401110008).

参考文献

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[2]	Hadji D, Marchal Y 1999 IEEE Trans. Magnetics 35 1809
[3]	Rios R, Mudanai S, Shih W K, Packan P 2004 IEDM Tech. Dig. 755
[4]	He Jin, Chan Mansun, Zhang Xing 2006 IEEE Trans.on Electron Devices 53 2008
[5]	Xie Q, Xu Jnm, Yuan Taur 2012 IEEE Trans. Electron Devices 59 1569
[6]	Liu Z H, Hu C, Huang JH, Chan T Y, Jeng M C, Ko P K, Y C Cheng 1993 IEEE Trans. on Electron Devices 40 86
[7]	Qing S S, Zhang H M, Hu H Y, Qu J T, Wang G Y, Xiao Q 2011 Acta Phys. Sin. 60 058501 (in Chinese) [秦珊珊, 张鹤鸣, 胡辉勇, 屈江涛, 王冠宇, 肖庆, 舒珏 2011 60 058501]
[8]	Baishya S, Allik A, Sarkar C K 2006 IEEE Trans.on Electron Devices 53 507
[9]	Xi X, Dunga M, He J, Liu W, Cao K M, Jin X, Ou J J, Chan M, Niknejad A M, Hu C 2004 BEIM 4.5.0 MOSFET MODEL (Berkeley: Dept. Elect. Eng. Comput. Sci. University of California)
[10]	Sheng J N, Ma Q S, Yuan B, Zheng Q H, Yan Z W 2006 Theory and Application of Electromagnetic Field and Wave by Semi-Analytical Method (Beijing: Science Press) p25 (in Chinese) [盛剑霓, 马齐爽, 袁斌, 郑勤红, 闫照文 2006 电磁场与波分析中半解析法的理论方法与应用 (北京: 科学出版社) 第25页]
[11]	Jayadeva G S, DasGupta A 2010 IEEE Trans. on Electron Devices 57 1820
[12]	Medici Version A User Guide 2007 Synopsys Company
[13]	Ratnakumar K, Meindl J 1982 IEEE Solid-State Circuits 17 937
[14]	Yu B, Lu H, Liu M, Taur Y 2007 IEEE Trans. on Electron Devices 54 2715
[15]	Xie Q, Xu J, Ren T, Taur Y 2010 Semicond. Sci. Technol. 25 035
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施引文献

[1]	Kasai R, Yokoyamak, Yoshiia A, Sudo T 1982 IEEE Trans. on Electron Devices 29 870
[2]	Hadji D, Marchal Y 1999 IEEE Trans. Magnetics 35 1809
[3]	Rios R, Mudanai S, Shih W K, Packan P 2004 IEDM Tech. Dig. 755
[4]	He Jin, Chan Mansun, Zhang Xing 2006 IEEE Trans.on Electron Devices 53 2008
[5]	Xie Q, Xu Jnm, Yuan Taur 2012 IEEE Trans. Electron Devices 59 1569
[6]	Liu Z H, Hu C, Huang JH, Chan T Y, Jeng M C, Ko P K, Y C Cheng 1993 IEEE Trans. on Electron Devices 40 86
[7]	Qing S S, Zhang H M, Hu H Y, Qu J T, Wang G Y, Xiao Q 2011 Acta Phys. Sin. 60 058501 (in Chinese) [秦珊珊, 张鹤鸣, 胡辉勇, 屈江涛, 王冠宇, 肖庆, 舒珏 2011 60 058501]
[8]	Baishya S, Allik A, Sarkar C K 2006 IEEE Trans.on Electron Devices 53 507
[9]	Xi X, Dunga M, He J, Liu W, Cao K M, Jin X, Ou J J, Chan M, Niknejad A M, Hu C 2004 BEIM 4.5.0 MOSFET MODEL (Berkeley: Dept. Elect. Eng. Comput. Sci. University of California)
[10]	Sheng J N, Ma Q S, Yuan B, Zheng Q H, Yan Z W 2006 Theory and Application of Electromagnetic Field and Wave by Semi-Analytical Method (Beijing: Science Press) p25 (in Chinese) [盛剑霓, 马齐爽, 袁斌, 郑勤红, 闫照文 2006 电磁场与波分析中半解析法的理论方法与应用 (北京: 科学出版社) 第25页]
[11]	Jayadeva G S, DasGupta A 2010 IEEE Trans. on Electron Devices 57 1820
[12]	Medici Version A User Guide 2007 Synopsys Company
[13]	Ratnakumar K, Meindl J 1982 IEEE Solid-State Circuits 17 937
[14]	Yu B, Lu H, Liu M, Taur Y 2007 IEEE Trans. on Electron Devices 54 2715
[15]	Xie Q, Xu J, Ren T, Taur Y 2010 Semicond. Sci. Technol. 25 035
[16]	Bi H S, Hai C S, Han Z S 2011 Acta Phys. Sin. 60 018501 (in Chinese) [毕津顺, 海潮和, 韩郑生 2011 60 018501]

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