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Zhang Hong, Guo Hong-Xia, Pan Xiao-Yu, Lei Zhi-Feng, Zhang Feng-Qi, Gu Zhao-Qiao, Liu Yi-Tian, Ju An-An, Ouyang Xiao-Ping. Transport process and energy loss of heavy ions in silicon carbide. Acta Physica Sinica,
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2020, 69(11): 117701.
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Li Yuan-Yuan, Yu Yin, Meng Chuan-Min, Zhang Lu, Wang Tao, Li Yong-Qiang, He Hong-Liang, He Duan-Wei. Dynamic impact strength of diamond-SiC superhard composite. Acta Physica Sinica,
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Shen Shuai-Shuai, He Chao-Hui, Li Yong-Hong. Non-ionization energy loss of proton in different regions in SiC. Acta Physica Sinica,
2018, 67(18): 182401.
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Chen Wei-Chao, Tang Hui-Li, Luo Ping, Ma Wei-Wei, Xu Xiao-Dong, Qian Xiao-Bo, Jiang Da-Peng, Wu Feng, Wang Jing-Ya, Xu Jun. Research progress of substrate materials used for GaN-Based light emitting diodes. Acta Physica Sinica,
2014, 63(6): 068103.
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Song Kun, Chai Chang-Chun, Yang Yin-Tang, Jia Hu-Jun, Chen Bin, Ma Zhen-Yang. Effects of the improved hetero-material-gate approach on sub-micron silicon carbide metal-semiconductor field-effect transistor. Acta Physica Sinica,
2012, 61(17): 177201.
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Fang Chao, Liu Ma-Lin. The study of the Raman spectra of SiC layers in TRISO particles. Acta Physica Sinica,
2012, 61(9): 097802.
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Zhou Nai-Gen, Hong Tao, Zhou Lang. A comparative study between MEAM and Tersoff potentials on the characteristics of melting and solidification of carborundum. Acta Physica Sinica,
2012, 61(2): 028101.
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Zhang Lin, Xiao Jian, Qiu Yang-Zhang, Cheng Hong-Liang. Radition effect on Ti/4H-SiC SBD of gamma-ray,electrons and neutrons. Acta Physica Sinica,
2011, 60(5): 056106.
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Zhang Lei, Ye Hui, Huangfu You-Rui, Liu Xu. Investigation of Ge quantum dots formation on SiO2 substratethrough annealing process. Acta Physica Sinica,
2011, 60(7): 076103.
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Zhang Lin, Han Chao, Ma Yong-Ji, Zhang Yi-Men, Zhang Yu-Ming. Gamma-ray radiation effect on Ni/4H-SiC SBD. Acta Physica Sinica,
2009, 58(4): 2737-2741.
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Liu Fu, Zhou Ji-Cheng, Tan Xiao-Chao. First-principles study on 3C-SiC(001)-(2×1)surface atomic structure and electronic structure. Acta Physica Sinica,
2009, 58(11): 7821-7825.
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Han Ru, Yang Yin-Tang, Chai Chang-Chun. Electronic Raman scattering and the second-order Raman spectra of the n-type SiC. Acta Physica Sinica,
2008, 57(5): 3182-3187.
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Ding Hong-Lin, Liu Kui, Wang Xiang, Fang Zhong-Hui, Huang Jian, Yu Lin-Wei, Li Wei, Huang Xin-Fan, Chen Kun-Ji. Effect of control oxide on the performance of nanocrystalline silicon based double-barrier floating gate memory structure. Acta Physica Sinica,
2008, 57(7): 4482-4486.
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Lin Tao, Chen Zhi-Ming, Li Jia, Li Lian-Bi, Li Qing-Min, Pu Hong-Bin. Study of the growth characteristics of SiCGe layers grown on 6H-SiC substrates. Acta Physica Sinica,
2008, 57(9): 6007-6012.
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Sheng Yong-Gang, Xu Yao, Li Zhi-Hong, Wu Dong, Sun Yu-Han, Wu Zhong-Hua. Determination of fractal dimensions of silicon dioxide xerogel by means of gas-adsorption. Acta Physica Sinica,
2005, 54(1): 221-227.
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Yu Wei, He Jie, Sun Yun-Tao, Zhu Hai-Feng, Han Li, Fu Guang-Sheng. Pulse laser crystallization of silicon carbon thin films. Acta Physica Sinica,
2004, 53(6): 1930-1934.
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Wang Jian-Ping, Hao Yue, Peng Jun, Zhu Zuo-Yun, Zhang Yong-Hua. . Acta Physica Sinica,
2002, 51(8): 1793-1797.
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