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Zhang Hong, Guo Hong-Xia, Pan Xiao-Yu, Lei Zhi-Feng, Zhang Feng-Qi, Gu Zhao-Qiao, Liu Yi-Tian, Ju An-An, Ouyang Xiao-Ping. Transport process and energy loss of heavy ions in silicon carbide. Acta Physica Sinica,
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2020, 69(11): 117701.
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Li Yuan-Yuan, Yu Yin, Meng Chuan-Min, Zhang Lu, Wang Tao, Li Yong-Qiang, He Hong-Liang, He Duan-Wei. Dynamic impact strength of diamond-SiC superhard composite. Acta Physica Sinica,
2019, 68(15): 158101.
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Shen Shuai-Shuai, He Chao-Hui, Li Yong-Hong. Non-ionization energy loss of proton in different regions in SiC. Acta Physica Sinica,
2018, 67(18): 182401.
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Zang Hang, Huang Zhi-Sheng, Li Tao, Guo Rong-Ming. Comparative study of irradiation swelling in monocrystalline and polycrystalline silicon carbide. Acta Physica Sinica,
2017, 66(6): 066104.
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Chen Cheng-Zhao, Zheng Yuan-Yu, Huang Shi-Hao, Li Cheng, Lai Hong-Kai, Chen Song-Yan. Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD. Acta Physica Sinica,
2012, 61(7): 078104.
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Song Kun, Chai Chang-Chun, Yang Yin-Tang, Jia Hu-Jun, Chen Bin, Ma Zhen-Yang. Effects of the improved hetero-material-gate approach on sub-micron silicon carbide metal-semiconductor field-effect transistor. Acta Physica Sinica,
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Fang Chao, Liu Ma-Lin. The study of the Raman spectra of SiC layers in TRISO particles. Acta Physica Sinica,
2012, 61(9): 097802.
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Zhou Nai-Gen, Hong Tao, Zhou Lang. A comparative study between MEAM and Tersoff potentials on the characteristics of melting and solidification of carborundum. Acta Physica Sinica,
2012, 61(2): 028101.
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Su Shao-Jian, Wang Wei, Zhang Guang-Ze, Hu Wei-Xuan, Bai An-Qi, Xue Chun-Lai, Zuo Yu-Hua, Cheng Bu-Wen, Wang Qi-Ming. Epitaxial growth of Ge0.975Sn0.025alloy films on Si(001) substrates by molecular beam epitaxy. Acta Physica Sinica,
2011, 60(2): 028101.
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Yu Li-Hua, Dong Song-Tao, Dong Shi-Run, Xu Jun-Hua. Epitaxial growth and mechanical properties of AlN/Si3N4 nanostructured multilayers. Acta Physica Sinica,
2008, 57(8): 5151-5158.
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Lin Tao, Chen Zhi-Ming, Li Jia, Li Lian-Bi, Li Qing-Min, Pu Hong-Bin. Study of the growth characteristics of SiCGe layers grown on 6H-SiC substrates. Acta Physica Sinica,
2008, 57(9): 6007-6012.
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Kong Ming, Wei Lun, Dong Yun-Shan, Li Ge-Yang. Epitaxial growth and superhardness effect in TiN/Al2O3 nanomultilayers. Acta Physica Sinica,
2006, 55(2): 770-775.
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Zhou Nai-Gen, Zhou Lang, Du Dan-Xu. Structure and formation of misfit dislocations in an epitaxial fcc film. Acta Physica Sinica,
2006, 55(1): 372-377.
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Yu Wei, He Jie, Sun Yun-Tao, Zhu Hai-Feng, Han Li, Fu Guang-Sheng. Pulse laser crystallization of silicon carbon thin films. Acta Physica Sinica,
2004, 53(6): 1930-1934.
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Tang Xiao-Yan, Zhang Yi-Men, Zhang He-Ming, Zhang Yu-Ming, Dai Xian-Ying, Hu Hui-Yong. 3UCVD deposition SiO2 on SiC wafer and its C-V measurement. Acta Physica Sinica,
2004, 53(9): 3225-3228.
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Lao Ji-Jun, Hu Xiao-Ping, Yu Xiao-Jiang, Li Ge-Yang, Gu Ming-Yuan. Phase transformation of AlN in AlN/VN nanomultilayers and its effect on the mech anical properties of films. Acta Physica Sinica,
2003, 52(9): 2259-2263.
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2002, 51(5): 1108-1112.
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