Silicon carbide (SiC) has been widely used in nuclear technology due to its excellent properties. In the irradiation environment, the energetic incident particles can cause the atoms in the material to deviate from the position of the crystal lattice, and then the vacancies, interstitial atoms, anti-site atoms and other point defects are produced. These defects will change the thermal properties of the material and degrade the service performance of the material. Therefore, in this work the equilibrium molecular dynamics method (Green-Kubo method) was used to study the effect of point defects on the heat transfer properties of cubic SiC (β-SiC or 3C-SiC) using one Tersoff-type potential. The point defects considered include: Si interstitial atoms (SiI), Si vacancies (SiV), Si anti-site atoms (SiC), C interstitial atoms (CI), C vacancies (CV) and C anti-site atoms (CSi). It was found that the thermal conductivity (λ) decreases with the increase of the point defect concentration (c). The excess thermal resistance (ΔR=Rdefect-Rperfect, R=1/λ, Rdefect is the thermal resistance of the defective material, Rperfect is the thermal resistivity of the material without defects) has a linear relationship with the concentration of point defects in the considered range (0.2%~1.6%), and its slope is the thermal resistivity coefficient. It can be found that the thermal resistivity coefficient of vacancy and interstitial atoms are higher than that of anti-site atoms; the thermal resistivity coefficient of point defects at high temperature is higher than that of point defects at low temperature; the thermal resistivity coefficients of Si vacancies and Si interstitial atoms are higher than that of C vacancies and C interstitial atoms. These results are helpful to predict the thermal conductivity of silicon carbide under irradiation and control the thermal conductivity of silicon carbide.