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Wang Fu, Zhou Yi, Gao Shi-Xin, Duan Zhen-Gang, Sun Zhi-Peng, Wang Jun, Zou Yu, Fu Bao-Qin. Molecular dynamics study of effects of point defects on thermal conductivity in cubic silicon carbide. Acta Physica Sinica,
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Zhang Hong, Guo Hong-Xia, Pan Xiao-Yu, Lei Zhi-Feng, Zhang Feng-Qi, Gu Zhao-Qiao, Liu Yi-Tian, Ju An-An, Ouyang Xiao-Ping. Transport process and energy loss of heavy ions in silicon carbide. Acta Physica Sinica,
2021, 70(16): 162401.
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Lu Yuan-Yuan, Lu Gui-Hua, Zhou Heng-Wei, Huang Yi-Neng. Preparation and properties of spodumene/silicon carbide composite ceramic materials. Acta Physica Sinica,
2020, 69(11): 117701.
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Li Yuan-Yuan, Yu Yin, Meng Chuan-Min, Zhang Lu, Wang Tao, Li Yong-Qiang, He Hong-Liang, He Duan-Wei. Dynamic impact strength of diamond-SiC superhard composite. Acta Physica Sinica,
2019, 68(15): 158101.
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Shen Shuai-Shuai, He Chao-Hui, Li Yong-Hong. Non-ionization energy loss of proton in different regions in SiC. Acta Physica Sinica,
2018, 67(18): 182401.
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Song Kun, Chai Chang-Chun, Yang Yin-Tang, Jia Hu-Jun, Chen Bin, Ma Zhen-Yang. Effects of the improved hetero-material-gate approach on sub-micron silicon carbide metal-semiconductor field-effect transistor. Acta Physica Sinica,
2012, 61(17): 177201.
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Fang Chao, Liu Ma-Lin. The study of the Raman spectra of SiC layers in TRISO particles. Acta Physica Sinica,
2012, 61(9): 097802.
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Zhou Nai-Gen, Hong Tao, Zhou Lang. A comparative study between MEAM and Tersoff potentials on the characteristics of melting and solidification of carborundum. Acta Physica Sinica,
2012, 61(2): 028101.
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Zhang Lin, Yang Fei, Xiao Jian, Gu Wen-Ping, Qiu Yan-Zhang. Power characteristics of SiC bipolar-mode JFET. Acta Physica Sinica,
2011, 60(10): 107304.
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Lu Hong-Yan, Chen San, Liu Bao-Tong. Theoretical research on two gaps in cuprate superconductors:an electronic Raman scattering study. Acta Physica Sinica,
2011, 60(3): 037402.
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Huang Wei, Chen Zhi-Zhan, Chen Yi, Shi Er-Wei, Zhang Jing-Yu, Liu Qing-Feng, Liu Qian. Effect of Ni thickness on the contact properties of Ni/6H-SiC analyzed by combinatorial method. Acta Physica Sinica,
2010, 59(5): 3466-3472.
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Han Ru, Fan Xiao-Ya, Yang Yin-Tang. Temperature-dependent Raman property of n-type SiC. Acta Physica Sinica,
2010, 59(6): 4261-4266.
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Zhang Lin, Han Chao, Ma Yong-Ji, Zhang Yi-Men, Zhang Yu-Ming. Gamma-ray radiation effect on Ni/4H-SiC SBD. Acta Physica Sinica,
2009, 58(4): 2737-2741.
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Liu Fu, Zhou Ji-Cheng, Tan Xiao-Chao. First-principles study on 3C-SiC(001)-(2×1)surface atomic structure and electronic structure. Acta Physica Sinica,
2009, 58(11): 7821-7825.
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Lin Tao, Chen Zhi-Ming, Li Jia, Li Lian-Bi, Li Qing-Min, Pu Hong-Bin. Study of the growth characteristics of SiCGe layers grown on 6H-SiC substrates. Acta Physica Sinica,
2008, 57(9): 6007-6012.
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Xu Peng-Shou, Li Yong-Hua, Pan Hai-Bin. First principle study on β-SiC(001)-(2×1) surface structure. Acta Physica Sinica,
2005, 54(12): 5824-5829.
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Yu Wei, He Jie, Sun Yun-Tao, Zhu Hai-Feng, Han Li, Fu Guang-Sheng. Pulse laser crystallization of silicon carbon thin films. Acta Physica Sinica,
2004, 53(6): 1930-1934.
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Tang Xiao-Yan, Zhang Yi-Men, Zhang He-Ming, Zhang Yu-Ming, Dai Xian-Ying, Hu Hui-Yong. 3UCVD deposition SiO2 on SiC wafer and its C-V measurement. Acta Physica Sinica,
2004, 53(9): 3225-3228.
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Wang Jian-Ping, Hao Yue, Peng Jun, Zhu Zuo-Yun, Zhang Yong-Hua. . Acta Physica Sinica,
2002, 51(8): 1793-1797.
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