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The Ti/4H-SiC Schottky barrier diodes(SBDs) were irradiated at room temperature with 60Co gamma-ray source, 1MeV electrons and neutrons, and 0V and -30 V bias voltage were applied to the diodes during gamma-ray and electron radiation. The meaurement results show that -30 V radiation bias voltage has no influence on the radiation effect of the diodes. After 1 Mrad(Si) gamma-ray and 1×1013 n/cm2neutron radiation respectively, the Schottky barrier height of the diodes basically remain the same values. After an electron dose of 3.43×1014 e/cm2, Schottky barrier height of the diodes slightly decreased, which was caused by ionizing damage of high energy electron, and recovered completely after annealing at room temperture. After gamma-ray and electron radiation, the reverse current of Ti/4H-SiC SBD had no obviously degration. The on-state resistance of the diodes increased after electron and neutron radiaiton.
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Keywords:
- silicon carbide /
- Schottky barrier diode /
- bias voltage /
- radiation effect
[1] Wang S G, Zhang Y M, Zhang Y M 2003 Chin. Phys. 12 322
[2] Sheridan D C, Chung G, Clark S, Cressler J D 2001 IEEE Trans. Nucl. Sci. 48 2229
[3] Zhang L, Zhang Y M, Zhang Y M, Han C, Ma Y J 2009 Chin. Phys. B 18 1931
[4] Kang S M, Ha J H, Park S H, Kim H S, Chun S D, Kim Y K 2007 Nucl. Instrum. Methods A 580 416
[5] Brisset C, Noblanc O, Picard C, Joffre F, Brylinski C 2000 IEEE Trans. Nucl. Sci. 47 598
[6] Zhang L, Zhang Y M, Zhang Y M, Han C, Ma Y J 2009 Chin. Phys. B 18 3490
[7] Shang Y C, Zhang Y M, Zhang Y M, Liu Z L 2003 Journal of Electronics and Information Technology 25 389 (in Chinese) [尚 也淳、张玉明、张义门、罗晋生 2003 电子与信息学报 25 389] [8] Zhang L, Zhang Y M, Zhang Y M, Han C, Ma Y J 2009 Acta Phys. Sin. 58 288 (in Chinese) [张 林、张义门、张玉明、韩 超、马永吉 2009 58 288]
[8] Wang T Q, Shen Y P, Wang S W, Zhang S F 1999 Journal of National University of Defense Technology 21 36 (in Chinese) [王同权、沈永平、王尚武、张树发 1999 国防科技大学学报 21 36]
[9] Wang S G, Yang L A, Zhang Y M, Zhang Y M, Zhang Z Y, Yan J F 2003 Chin. Phys. 12 0322
[10] Storasta L, Bergman J P, Janzén E 2004 Journal of Applied Physics 96 4909
[11] Shang Y C, Zhang Y M, Zhang Y M 2000 Nuclear Electronics & Detection Technology 20 424 (in Chinese) [尚也淳、张义门、张 玉明 2000 核电子学与探测技术 20 424]
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[1] Wang S G, Zhang Y M, Zhang Y M 2003 Chin. Phys. 12 322
[2] Sheridan D C, Chung G, Clark S, Cressler J D 2001 IEEE Trans. Nucl. Sci. 48 2229
[3] Zhang L, Zhang Y M, Zhang Y M, Han C, Ma Y J 2009 Chin. Phys. B 18 1931
[4] Kang S M, Ha J H, Park S H, Kim H S, Chun S D, Kim Y K 2007 Nucl. Instrum. Methods A 580 416
[5] Brisset C, Noblanc O, Picard C, Joffre F, Brylinski C 2000 IEEE Trans. Nucl. Sci. 47 598
[6] Zhang L, Zhang Y M, Zhang Y M, Han C, Ma Y J 2009 Chin. Phys. B 18 3490
[7] Shang Y C, Zhang Y M, Zhang Y M, Liu Z L 2003 Journal of Electronics and Information Technology 25 389 (in Chinese) [尚 也淳、张玉明、张义门、罗晋生 2003 电子与信息学报 25 389] [8] Zhang L, Zhang Y M, Zhang Y M, Han C, Ma Y J 2009 Acta Phys. Sin. 58 288 (in Chinese) [张 林、张义门、张玉明、韩 超、马永吉 2009 58 288]
[8] Wang T Q, Shen Y P, Wang S W, Zhang S F 1999 Journal of National University of Defense Technology 21 36 (in Chinese) [王同权、沈永平、王尚武、张树发 1999 国防科技大学学报 21 36]
[9] Wang S G, Yang L A, Zhang Y M, Zhang Y M, Zhang Z Y, Yan J F 2003 Chin. Phys. 12 0322
[10] Storasta L, Bergman J P, Janzén E 2004 Journal of Applied Physics 96 4909
[11] Shang Y C, Zhang Y M, Zhang Y M 2000 Nuclear Electronics & Detection Technology 20 424 (in Chinese) [尚也淳、张义门、张 玉明 2000 核电子学与探测技术 20 424]
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