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Ge is deposited on an ultrathin SiO2 layer obtained chemically at room temperature, followed by annealing process. High density and uniform Ge quantum dots, rather than superdomes in traditional treatment, are obtained. Growth mechanism is suggested to explain the unusual microstructure dependence on annealing temperature. Raman spectrum is used to investigate the strain. Two peaks are found to be around 500 nm and 1350 nm respectively from the photoluminescence characterization.
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Keywords:
- Ge quantum dots /
- SiO2 /
- annealing process
[1] Liu S R, Huang W Q, Qin Z J 2006 Acta Phys. Sin. 55 2488 (in Chinese) [刘世荣、黄伟其、秦朝建 2006 55 2488]
[2] Deng N, Chen P Y, Li Z J 2004 Acta Phys. Sin. 53 3136 (in Chinese) [邓 宁、陈培毅、李志坚 2004 53 3136]
[3] Ma S Y, Zhang B R, Qin G G, Han H X, Wang Z P, Li G H, Ma Z C, Zong W H 1998 Acta Phys. Sin. 47 502 (in Chinese) [马书懿、张伯蕊、秦国刚、韩和相、汪兆平、李国华、马振昌、宗婉华 1997 47 502]
[4] Elkurdi M, Boucaud P, Sauvage S 2003 Physica E 16 523
[5] Karl Brunner 2002 Rep. Prog. Phys. 65 27
[6] Berbezier I, Karmous A, Ronda A, Sgariata A, Baizarotti A, Castrucci P, Scarselli M, De Crescenzi M 2006 Appl. Phys. Lett. 89 06312
[7] Kolobov A V, Shklyaev A A, Oyanagi H, Fons P, Yamasaki S, Ichikawa M 2001 Appl. Phys. Lett. 78 2563
[8] Si J J, Yang Q Q, Teng D, Wang H J, Yu J Z, Wang Q M, Guo L W, Zhou J M 1999 Acta Phys. Sin. 48 1745 (in Chinese) [司俊杰、杨沁清、滕 达、王红杰、余金中、王启明、郭丽伟、周均铭 1999 48 1745]
[9] Han G Q, Zeng Y G, Yu J Z, Cheng B W, Yang H T 2008 Chin. Phys. Lett. 25 242
[10] Kapil U Joshi, D Kabiraj, A M Narsale, D K Avasthi, T K Gundurao, T N Warang, D C Kothari 2009 Surf. Coat. Tech. 203 2497
[11] Zhang L, Ye H, Huangfu Y R, Zhang C, Liu X 2009 Appl. Surf. Sci. 256 768
[12] Sutter E, Sutter P 2006 Nanotechnol. 17 3724
[13] Szkutnik P D, Sgarlata A, Motta N, Placidi E, Berbezier I, Balzarotti A 2007 Surf. Sci. 601 2778
[14] Li Q M, Pattada B, Bruech S R J, Hersee S, Han S M 2005 J. Appl. Phys. 98 073504
[15] Kolobov A V 2000 J. Appl. Phys. 87 2926
[16] Tan P H, Brunner K, Bougeard D, Abstraiter G 2003 Phys. Rev. B 68 125302
[17] Yue L P, He Y Z 1997 Acta Phys. Sin. 46 1212 (in Chinese) [岳兰平、何怡贞 1997 46 1212]
[18] Wang Y D, Huang J Y, Ye Z Z, Zhao B H 2001 Chinese Journal of Semiconductors 22 1116 (in Chinese) [王亚东、黄靖云、叶志镇、赵炳辉 2001 半导体学报 22 1116]
[19] Huang C J, Tang Y, Li D Z, Cheng B W, Luo L P, Yu J Z, Wang Q M 2001 Appl. Phys. Lett. 78 2006
[20] Shklyaev A A, Nobuki S, Uchida S, Nakamura Y, Ichikawa M 2006 Appl. Phys. Lett. 88 121919
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[1] Liu S R, Huang W Q, Qin Z J 2006 Acta Phys. Sin. 55 2488 (in Chinese) [刘世荣、黄伟其、秦朝建 2006 55 2488]
[2] Deng N, Chen P Y, Li Z J 2004 Acta Phys. Sin. 53 3136 (in Chinese) [邓 宁、陈培毅、李志坚 2004 53 3136]
[3] Ma S Y, Zhang B R, Qin G G, Han H X, Wang Z P, Li G H, Ma Z C, Zong W H 1998 Acta Phys. Sin. 47 502 (in Chinese) [马书懿、张伯蕊、秦国刚、韩和相、汪兆平、李国华、马振昌、宗婉华 1997 47 502]
[4] Elkurdi M, Boucaud P, Sauvage S 2003 Physica E 16 523
[5] Karl Brunner 2002 Rep. Prog. Phys. 65 27
[6] Berbezier I, Karmous A, Ronda A, Sgariata A, Baizarotti A, Castrucci P, Scarselli M, De Crescenzi M 2006 Appl. Phys. Lett. 89 06312
[7] Kolobov A V, Shklyaev A A, Oyanagi H, Fons P, Yamasaki S, Ichikawa M 2001 Appl. Phys. Lett. 78 2563
[8] Si J J, Yang Q Q, Teng D, Wang H J, Yu J Z, Wang Q M, Guo L W, Zhou J M 1999 Acta Phys. Sin. 48 1745 (in Chinese) [司俊杰、杨沁清、滕 达、王红杰、余金中、王启明、郭丽伟、周均铭 1999 48 1745]
[9] Han G Q, Zeng Y G, Yu J Z, Cheng B W, Yang H T 2008 Chin. Phys. Lett. 25 242
[10] Kapil U Joshi, D Kabiraj, A M Narsale, D K Avasthi, T K Gundurao, T N Warang, D C Kothari 2009 Surf. Coat. Tech. 203 2497
[11] Zhang L, Ye H, Huangfu Y R, Zhang C, Liu X 2009 Appl. Surf. Sci. 256 768
[12] Sutter E, Sutter P 2006 Nanotechnol. 17 3724
[13] Szkutnik P D, Sgarlata A, Motta N, Placidi E, Berbezier I, Balzarotti A 2007 Surf. Sci. 601 2778
[14] Li Q M, Pattada B, Bruech S R J, Hersee S, Han S M 2005 J. Appl. Phys. 98 073504
[15] Kolobov A V 2000 J. Appl. Phys. 87 2926
[16] Tan P H, Brunner K, Bougeard D, Abstraiter G 2003 Phys. Rev. B 68 125302
[17] Yue L P, He Y Z 1997 Acta Phys. Sin. 46 1212 (in Chinese) [岳兰平、何怡贞 1997 46 1212]
[18] Wang Y D, Huang J Y, Ye Z Z, Zhao B H 2001 Chinese Journal of Semiconductors 22 1116 (in Chinese) [王亚东、黄靖云、叶志镇、赵炳辉 2001 半导体学报 22 1116]
[19] Huang C J, Tang Y, Li D Z, Cheng B W, Luo L P, Yu J Z, Wang Q M 2001 Appl. Phys. Lett. 78 2006
[20] Shklyaev A A, Nobuki S, Uchida S, Nakamura Y, Ichikawa M 2006 Appl. Phys. Lett. 88 121919
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