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Silicon carbide (SiC), as a representative of the third-generation semiconductor materials, is widely used in some fields which may suffer strong radiation such as in the cases of military affairs, aerospace and reactor. SiC possesses the superior radiation-resistance characteristic. However, SiC under the proton irradiation generate a lot of defects, resulting in degradation of device performance and even complete loss of its function. Therefore, the study on the irradiation damage to SiC under proton irradiation possesses important significance. A large number of studies have shown that for most of electronic devices and different types of incident particles, the degradation of device performance caused by displacement damage is linearly dependent on non-ionizing energy loss (NIEL), so the displacement damage can be evaluated by NIEL. In this work, the Monte Carlo software Geant4 is used to simulate the relationship between NIEL and proton energy, and the variation of NIEL with the depth of the material and the contribution of different types of primary recoil atoms to the total NIEL are also studied. The NIEL simulation results show that the NIEL in SiC material is less than that in Si and Ga semiconductor material under the same proton irradiation, proving that the stability and the radiation-resistance of SiC are stronger. The simulation results of NIEL at different depths show that the most serious damage regions of the material under different energy protons are diverse. Under the irradiation of low energy proton, the most serious region of the displacement damage occurs at the end of the proton range. With the increase of proton energy, the worst damage region of material will gradually move from the end of the proton range to the surface of SiC material. According to the contribution of different types of primary recoil atoms to the total NIEL, when the energy of the incident proton is low, the displacement damage of the proton in the SiC is mainly caused by 28Si and 12C, and the damage caused by 28Si is obviously higher than that by 12C. As the energy of proton increases, the 28Si and 12C are still the main causes of Bragg peak of the NIEL at the end of the proton range, but the number of ions generated by nuclear reactions increases accordingly, and the displacement damage caused by these ions increases in the shallow area of SiC, leading the surface of the material to be the worst damaged region. The combination of the two factors caused the most serious damage region moves from the end of the proton range to the surface of the material with the increase of proton energy. The results of this study are useful for the application of SiC devices to irradiation environment.
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Keywords:
- SiC /
- Geant4 /
- non-ionizing energy loss /
- displacement damage
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[1] Liu X F, Chen Y 2015 Adv. Mater. Ind. 10 12 (in Chinese) [刘兴昉, 陈宇 2015 新材料产业 10 12]
[2] Hao J Q, Gao W, Zhao L B, Cao J S, L X, Ruan J 2016 Adv. Mater. Ind. 11 6 (in Chinese) [郝建群, 高伟, 赵璐冰, 曹峻松, 吕欣, 阮军 2016 新材料产业 11 6]
[3] Zhang H H, Zhang C H, Li B S, Zhou L H, Yang Y T, Fu Y C 2009 Acta Phys. Sin. 58 3302 (in Chinese) [张洪华, 张崇宏, 李炳生, 周丽宏, 杨义涛, 付云翀 2009 58 3302]
[4] Kimoto T 2015 Jpn J. Appl. Phys. 54 040103
[5] Lebedev A A, Chelnokov V E 1999 Semiconductor 33 999
[6] Zhang Y J, Yin Z P, Su Y, Wang D J 2018 Chin. Phys. B 27 047103
[7] Li M, Zhou X, Yang H, Du S, Huang Q 2018 Scr. Mater. 143 149
[8] Tang D, He C X, Zang H, Li Y H, Xiong C, Zhang J X, Zhang P, Tan P K 2016 Acta Phys. Sin. 65 084209 (in Chinese) [唐杜, 贺朝会, 臧航, 李永宏, 熊涔, 张晋新, 张鹏, 谭鹏康 2016 65 084209]
[9] Chilingarov A, Meyer J S, Sloan T 1997 Nucl. Instrum. Meth. Phys. Res. 395 35
[10] Lazanu S, Lazanu I, Biggeri U, Borchi E, Bruzzi M 1997 Nucl. Instrum. Meth. Phys. Res. 394 232
[11] Wu Y Y, Yue L, Hu J M, Lan M J, Xiao J D, Yang D Z, He S Y, Zhang Z W, Wang X C, Qian Y, Chen M B 2011 Acta Phys. Sin. 60 098110 (in Chinese) [吴宜勇, 岳龙, 胡建民, 蓝慕杰, 肖景东, 杨德庄, 何世禹, 张忠卫, 王训春, 钱勇, 陈鸣波 2011 60 098110]
[12] Zu J H, Wei Y, Xie H G, Niu S L, Huang L X 2014 Acta Phys. Sin. 63 066102 (in Chinese) [朱金辉, 韦源, 谢红刚, 牛胜利, 黄流兴 2014 63 066102]
[13] Tang X X, Luo W Y, Wang C Z, He X F, Zha Y Z, Fan S, Huang X L 2008 Acta Phys. Sin. 57 1266 (in Chinese) [唐欣欣, 罗文芸, 王朝壮, 贺新福, 查元梓, 樊胜, 黄小龙 2008 57 1266]
[14] Lu W, Wang T Q, Wang X G, Liu X L 2011 Nucl. Technol. 34 529 (in Chinese) [路伟, 王同权, 王兴功, 刘雪林 2011 核技术 34 529]
[15] Guo D X, He C H, Zang H, Xi J Q, Ma L, Yang T, Zhang P 2013 Atom. Energ. Sci. Technol. 47 1222 (in Chinese) [郭达禧, 贺朝会, 臧航, 席建琦, 马梨, 杨涛, 张鹏 2013 原子能科学技术 47 1222]
[16] Chen S B, Zhang Y M, Chen Y S, Huang L X, Zhang Y M 2001 High. Energ. Phys. Nucl. 25 365 (in Chinese) [陈世彬, 张义门, 陈雨生, 黄流兴, 张玉明 2001 高能物理与核物理 25 365]
[17] Lindhard J, Nielsen V, Scharff M, Thomsen P V 1963 Mat. Fys. Medd. Dan. Vid. Selsk. 33 706
[18] Robinson M T, Torrens I M 1974 Phys. Rev. B 9 5008
[19] Akkerman A, Barak J 2007 Nucl. Instrum. Meth. Phys. Res. 260 529
[20] Akkerman A, Barak J, Chadwick M B, Levinson J, Murat M, Lifshitz Y 2011 Radiat. Phys. Chem. 62 301
[21] Dale C J, Chen L, Mcnulty P J, Marshall P W, Burke E A 1994 IEEE Trans. Nucl. Sci. 41 1974
[22] Jun I, Xapsos M A, Messenger S R, Burke E A, Walters R J, Summers G P, Jordan T 2003 IEEE Trans. Nucl. Sci. 50 1924
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