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2024, 73(7): 077201.
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2023, 72(13): 137701.
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Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan. Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica,
2020, 69(4): 047201.
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Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang. Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica,
2017, 66(6): 067903.
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Zhao Feng-Qi, Zhang Min, Li Zhi-Qiang, Ji Yan-Ming. Effects of optical phonon and built-in electric field on the binding energy of bound polarons in a wurtzite In0.19Ga0.81N/GaN quantum well. Acta Physica Sinica,
2014, 63(17): 177101.
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Zhang Pan-Jun, Sun Hui-Qing, Guo Zhi-You, Wang Du-Yang, Xie Xiao-Yu, Cai Jin-Xin, Zheng Huan, Xie Nan, Yang Bin. The spectrum-control of dual-wavelength LED with quantum dots planted in quantum wells. Acta Physica Sinica,
2013, 62(11): 117304.
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Chen Hao-Ran, Yang Lin-An, Zhu Zhang-Ming, Lin Zhi-Yu, Zhang Jin-Cheng. Theoretical study on degradation phenomenon on AlGaN/GaN resonant tunneling diode. Acta Physica Sinica,
2013, 62(21): 217301.
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Chen Jun, Fan Guang-Han, Zhang Yun-Yan. The investigation of performance improvement of GaN-based dual-wavelength light-emitting diodes with various thickness of quantum barriers. Acta Physica Sinica,
2012, 61(17): 178504.
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Wang Du-Yang, Sun Hui-Qing, Xie Xiao-Yu, Zhang Pan-Jun. Theoretical study of luminance of GaN quantum dots planted in quantum well. Acta Physica Sinica,
2012, 61(22): 227303.
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Wang Yan-Wen, Wu Hua-Rui. Exciton states and optical properties in zinc-blende GaN/AlGaN quantum dot. Acta Physica Sinica,
2012, 61(10): 106102.
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2011, 60(1): 018502.
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2010, 59(2): 1258-1262.
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Feng Qian, Hao Yue, Yue Yuan-Zheng. Study of AlGaN/GaN MOSHEMT device with Al2O3 insulating film. Acta Physica Sinica,
2008, 57(3): 1886-1890.
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Xie Zi-Li, Zhang Rong, Xiu Xiang-Qian, Han Ping, Liu Bin, Chen Lin, Yu Hui-Qiang, Jiang Ruo-Lian, Shi Yi, Zheng You-Dou. MOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector. Acta Physica Sinica,
2007, 56(11): 6717-6721.
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Li Jiang-Fan, Shan Shu-Min, Yang Jian-Kun, Jiang Zong-Fu. An explicit analytical solution of the Schr?dinger equation for a detuned quantum frequency conversion system. Acta Physica Sinica,
2007, 56(10): 5597-5601.
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Zhou Mei, Zuo Shu-Hua, Zhao De-Gang. A new Schottky barrier structure of GaN-based ultraviolet photodetector. Acta Physica Sinica,
2007, 56(9): 5513-5517.
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Shen Ye, Xing Huai-Zhong, Yu Jian-Guo, Lü Bin, Mao Hui-Bing, Wang Ji-Qing. Curie-temperature modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells. Acta Physica Sinica,
2007, 56(6): 3453-3457.
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You Da, Xu Jin-Tong, Tang Ying-Wen, He Zheng, Xu Yun-Hua, Gong Hai-Mei. Research of two-dimensional hole gas in p-GaN/Al0.35Ga0.65N/GaN strained quantum-well. Acta Physica Sinica,
2006, 55(12): 6600-6605.
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Zhang Jie-Fang, Xu Chang-Zhi, He Bao-Gang. The variable separation approach and study on solving the variable-coefficient nonlinear Schr?dinger equation. Acta Physica Sinica,
2004, 53(11): 3652-3656.
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LIU JIAN-BO, CAI XI-PING. A MACROSCOPICAL SIMULATION SOLUTION TO THE ONE-DIMENSIONAL STATIONARY STATE SCHRDINGER EQUATION. Acta Physica Sinica,
2001, 50(5): 820-824.
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