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Within the framework of effective-mass approximation, exciton states confined in zinc-blende GaN/AlGaN quantum dot (QD) are investigated by a variational approach, including the three-dimensional confinement of electron and hole in the QD and the finite band offset. Numerical results show that both the exciton binding energy and the interband emission energy decrease when QD height (or radius) increases. Our theoretical results are in agreement with the experimental measurements.
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Keywords:
- exciton /
- quantum dot /
- GaN
[1] Sakr S, Warde E, Tchernycheva M, Rigutti L, Isac N, Julien F H 2011 Appl. Phys. Lett. 99 142103
[2] Yoshida S, Yokogawa T, Imai Y, Kimura S, Sakata O 2011 Appl. Phys. Lett. 99 131909
[3] Holmes M, Park Y, Wang X, Chan C, Reid B, Kim H, Taylor R, Warner J, Luo J 2011 Appl. Phys. Lett. 98 251908
[4] Widmann F, Simon J, Daudin B, Feuillet G, Rouviére J L, Pelekanos N T, Fishman G 1998 Phys. Rev. B 58 R15989
[5] Simon J, Pelekanos N T, Adelmann C, Martinez-Guerrero E, André R, Daudin B, Dang L S, Mariette H 2003 Phys. Rev. B 68 035312
[6] Schulz S, Schumacher S, Czycholl G 2006 Phys. Rev. B 73 245327
[7] Lei S Y, Shen B, Zhang G Y 2008 Acta Phys. Sin. 57 2386 (in Chinese) [雷双瑛, 沈波, 张国义 2008 57 2386]
[8] Novikov S V, Stanton N M, Campion R P, Morris R D, Geen H L, Foxon C T, Kent A J 2008 Semiconductor Sci. Technol. 23 015018
[9] Chichibu S F, Onuma T, Sota T, DenBaars S P, Nakamura S, Kitamura T, Ishida Y, Okumura H 2003 J. Appl. Phys. 93 2051
[10] Garayt J P, Gérard J M, Enjalbert F, Ferlazzo L, Founta S, Martinez-Guerrero E, Rol F, Araujo D, Cox R, Daudin B, Gayral B, Dang L S, Mariette H 2005 Physica E 26 203
[11] Lee J, Spector H N, Chou W C 2005 Phys. Status Solidi B 242 2846
[12] Schulz S, Mourad D, Czycholl G 2009 Phys. Rev. B 80 165405
[13] Chu X L, Zhang Y 2010 J. At. Mol. Phys. 27 173 (in Chinese) [楚兴丽, 张莹 2010 原子与分子 27 173]
[14] Wei S Y, Zhao X, Wu H R 2006 Chin. J. Liquid Cryst. Displ. 2l 139 (in Chinese) [危书义, 赵旭, 吴花蕊 2006 液晶与显示 2l 139]
[15] Wu H T, Wang H L, Jiang L M 2009 Acta Phys. Sin. 58 465 (in Chinese) [吴慧婷, 王海龙, 姜黎明 2009 58 465]
[16] Marquardt O, Mourad D, Schulz S, Hickel T, Czycholl G, Neugebauer J 2008 Phys. Rev. B 78 235302
[17] Shi J, Xia C, Wei S, Liu Z 2005 J. Appl. Phys. 97 083705
[18] Shi J, Gan Z 2003 J. Appl. Phys. 94 407
[19] Wang H, Farias G A, Freire V N 1999 Phys. Rev. B 60 5705
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[1] Sakr S, Warde E, Tchernycheva M, Rigutti L, Isac N, Julien F H 2011 Appl. Phys. Lett. 99 142103
[2] Yoshida S, Yokogawa T, Imai Y, Kimura S, Sakata O 2011 Appl. Phys. Lett. 99 131909
[3] Holmes M, Park Y, Wang X, Chan C, Reid B, Kim H, Taylor R, Warner J, Luo J 2011 Appl. Phys. Lett. 98 251908
[4] Widmann F, Simon J, Daudin B, Feuillet G, Rouviére J L, Pelekanos N T, Fishman G 1998 Phys. Rev. B 58 R15989
[5] Simon J, Pelekanos N T, Adelmann C, Martinez-Guerrero E, André R, Daudin B, Dang L S, Mariette H 2003 Phys. Rev. B 68 035312
[6] Schulz S, Schumacher S, Czycholl G 2006 Phys. Rev. B 73 245327
[7] Lei S Y, Shen B, Zhang G Y 2008 Acta Phys. Sin. 57 2386 (in Chinese) [雷双瑛, 沈波, 张国义 2008 57 2386]
[8] Novikov S V, Stanton N M, Campion R P, Morris R D, Geen H L, Foxon C T, Kent A J 2008 Semiconductor Sci. Technol. 23 015018
[9] Chichibu S F, Onuma T, Sota T, DenBaars S P, Nakamura S, Kitamura T, Ishida Y, Okumura H 2003 J. Appl. Phys. 93 2051
[10] Garayt J P, Gérard J M, Enjalbert F, Ferlazzo L, Founta S, Martinez-Guerrero E, Rol F, Araujo D, Cox R, Daudin B, Gayral B, Dang L S, Mariette H 2005 Physica E 26 203
[11] Lee J, Spector H N, Chou W C 2005 Phys. Status Solidi B 242 2846
[12] Schulz S, Mourad D, Czycholl G 2009 Phys. Rev. B 80 165405
[13] Chu X L, Zhang Y 2010 J. At. Mol. Phys. 27 173 (in Chinese) [楚兴丽, 张莹 2010 原子与分子 27 173]
[14] Wei S Y, Zhao X, Wu H R 2006 Chin. J. Liquid Cryst. Displ. 2l 139 (in Chinese) [危书义, 赵旭, 吴花蕊 2006 液晶与显示 2l 139]
[15] Wu H T, Wang H L, Jiang L M 2009 Acta Phys. Sin. 58 465 (in Chinese) [吴慧婷, 王海龙, 姜黎明 2009 58 465]
[16] Marquardt O, Mourad D, Schulz S, Hickel T, Czycholl G, Neugebauer J 2008 Phys. Rev. B 78 235302
[17] Shi J, Xia C, Wei S, Liu Z 2005 J. Appl. Phys. 97 083705
[18] Shi J, Gan Z 2003 J. Appl. Phys. 94 407
[19] Wang H, Farias G A, Freire V N 1999 Phys. Rev. B 60 5705
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