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Pu Shi, Xiao Bo-Wen, Zhou Jian, Zhou Ya-Jin. Coherent photons induced high energy reactions in ultraperipheral heavy ion collisions. Acta Physica Sinica,
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Wang Guo-Dong, Cheng Rui, Wang Zhao, Zhou Ze-Xian, Luo Xia-Hui, Shi Lu-Lin, Chen Yan-Hong, Lei Yu, Wang Yu-Yu, Yang Jie. Target polarization effect on energy loss of O5+ ions near Bohr velocity in low density hydrogen plasma. Acta Physica Sinica,
2023, 72(4): 043401.
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Liu Heng, Li Ye, Du Meng-Chao, Qiu Peng, He Ying-Feng, Song Yi-Meng, Wei Hui-Yun, Zhu Xiao-Li, Tian Feng, Peng Ming-Zeng, Zheng Xin-He. Atomic layer deposition of AlGaN alloy and its application in quantum dot sensitized solar cells. Acta Physica Sinica,
2023, 72(13): 137701.
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2020, 69(15): 157303.
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2020, 69(12): 127302.
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Zhao Zheng-Yin, Wang Hong-Ling, Li Ming. Rashba spin splitting in the Al0.6Ga0.4N/GaN/Al0.3Ga0.7N/Al0.6Ga0.4N quantum well. Acta Physica Sinica,
2016, 65(9): 097101.
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2014, 63(8): 080202.
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2012, 61(21): 217302.
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Gao Rui-Jun, Ge Zi-Ming. Triple differential cross sections of the （e, 2e） reaction for electron impact Ar in a coplanar asymmetric geometry. Acta Physica Sinica,
2010, 59(3): 1702-1706.
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Tang Nai-Yun. Spin polarized current transport and charge polarization effect in ferromagnetic GaMnN resonant tunneling diode. Acta Physica Sinica,
2009, 58(5): 3397-3401.
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Gu Xiao-Ling, Guo Xia, Wu Di, Li Yi-Bo, Shen Guang-Di. Dependence of properties of GaN-based light emitting diodes on the surface InGaN thickness. Acta Physica Sinica,
2008, 57(2): 1220-1223.
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Zhou Li-Xia, Yan You-Guo. Polarization effect and post-collisional interaction in (e, 2e) reaction process for He and Ar in coplanar asymmetric geometry. Acta Physica Sinica,
2008, 57(12): 7619-7622.
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2007, 56(10): 6013-6018.
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Shu Bin, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying. Mathematical model of DC characteristic of SiGe charge injection transistors. Acta Physica Sinica,
2007, 56(2): 1105-1109.
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Zhou Mei, Zuo Shu-Hua, Zhao De-Gang. A new Schottky barrier structure of GaN-based ultraviolet photodetector. Acta Physica Sinica,
2007, 56(9): 5513-5517.
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2007, 56(11): 6717-6721.
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Kong Yue-Chan, Zheng You-Dou, Zhou Chun-Hong, Deng Yong-Zhen, Gu Shu-Lin, Shen Bo, Zhang Rong, Han Ping, Jiang Ruo-Lian, Shi Yi. Influence of polarizations and doping in AlGaN barrier on the two-dimensional electron-gas in AlGaN/GaN heterostruture. Acta Physica Sinica,
2004, 53(7): 2320-2324.
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Li Pei-Xian, Hao Yue, Fan Long, Zhang Jin-Cheng, Zhang Jin-Feng, Zhang Xiao-Ju. AlGaN/GaN heterojunction wavefunction half analytic model based on quantum distu rbance. Acta Physica Sinica,
2003, 52(12): 2985-2988.
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