| [1] |
Liu Heng, Li Ye, Du Meng-Chao, Qiu Peng, He Ying-Feng, Song Yi-Meng, Wei Hui-Yun, Zhu Xiao-Li, Tian Feng, Peng Ming-Zeng, Zheng Xin-He. Atomic layer deposition of AlGaN alloy and its application in quantum dot sensitized solar cells. Acta Physica Sinica,
2023, 72(13): 137701.
doi: 10.7498/aps.72.20230113
|
| [2] |
Wang Shun-Li, Wang Ya-Chao, Guo Dao-You, Li Chao-Rong, Liu Ai-Ping. NiO/GaN p-n junction ultraviolet photodetector and self-powered technology. Acta Physica Sinica,
2021, 70(12): 128502.
doi: 10.7498/aps.70.20210154
|
| [3] |
Qin Jie-Ming, Cao Jian-Ming, Jiang Da-Yong. Growth and characterization of the Mg0.57Zn0.43O alloy film. Acta Physica Sinica,
2013, 62(13): 138101.
doi: 10.7498/aps.62.138101
|
| [4] |
Sun Pei, Li Jian-Jun, Deng Jun, Han Jun, Ma Ling-Yun, Liu Tao. Temperature window of the (Al0.1Ga0.9)0.5In0.5P growth by MOCVD. Acta Physica Sinica,
2013, 62(2): 026801.
doi: 10.7498/aps.62.026801
|
| [5] |
Xing Hai-Ying, Fan Guang-Han, Yang Xue-Lin, Zhang Guo-Yi. Optical properties of GaMnN films grown by metal-organic chemical vapor deposition. Acta Physica Sinica,
2010, 59(1): 504-507.
doi: 10.7498/aps.59.504
|
| [6] |
Zhang Shuang, Zhao De-Gang, Liu Zong-Shun, Zhu Jian-Jun, Zhang Shu-Ming, Wang Yu-Tian, Duan Li-Hong, Liu Wen-Bao, Jiang De-Sheng, Yang Hui. Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector. Acta Physica Sinica,
2009, 58(11): 7952-7957.
doi: 10.7498/aps.58.7952
|
| [7] |
Zhou Mei, Zhao De-Gang. Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica,
2008, 57(7): 4570-4574.
doi: 10.7498/aps.57.4570
|
| [8] |
Zhou Mei, Chang Qing-Ying, Zhao De-Gang. A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector. Acta Physica Sinica,
2008, 57(4): 2548-2553.
doi: 10.7498/aps.57.2548
|
| [9] |
Li Tong, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Zhang Nian-Guo, Xing Yan-Hui, Han Jun, Liu Ying, Gao Guo, Shen Guang-Di. Studies on electrical properties of delta-doping p-GaN films. Acta Physica Sinica,
2007, 56(2): 1036-1040.
doi: 10.7498/aps.56.1036
|
| [10] |
Chen Xin-Liang, Xue Jun-Ming, Zhang De-Kun, Sun Jian, Ren Hui-Zhi, Zhao Ying, Geng Xin-Hua. Effect of substrate temperature on the ZnO thin films as TCO in solar cells grown by MOCVD technique. Acta Physica Sinica,
2007, 56(3): 1563-1567.
doi: 10.7498/aps.56.1563
|
| [11] |
Zhou Mei, Zuo Shu-Hua, Zhao De-Gang. A new Schottky barrier structure of GaN-based ultraviolet photodetector. Acta Physica Sinica,
2007, 56(9): 5513-5517.
doi: 10.7498/aps.56.5513
|
| [12] |
Peng Dong-Sheng, Feng Yu-Chun, Wang Wen-Xin, Liu Xiao-Feng, Shi Wei, Niu Han-Ben. A new method to grow high quality GaN film by MOCVD. Acta Physica Sinica,
2006, 55(7): 3606-3610.
doi: 10.7498/aps.55.3606
|
| [13] |
You Da, Xu Jin-Tong, Tang Ying-Wen, He Zheng, Xu Yun-Hua, Gong Hai-Mei. Research of two-dimensional hole gas in p-GaN/Al0.35Ga0.65N/GaN strained quantum-well. Acta Physica Sinica,
2006, 55(12): 6600-6605.
doi: 10.7498/aps.55.6600
|
| [14] |
Pan Jiao-Qing, Zhao Qian, Zhu Hong-Liang, Zhao Ling-Juan, Ding Ying, Wang Bao-Jun, Zhou Fan, Wang Lu-Feng, Wang Wei. Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers. Acta Physica Sinica,
2006, 55(10): 5216-5220.
doi: 10.7498/aps.55.5216
|
| [15] |
Wang Xiao-Dong, Wu Xu-Ming, Wang Qing, Cao Yu-Lian, He Guo-Rong, Tan Man-Qing. Optical characteristics of DBR with inhomogeneous graded interfaces. Acta Physica Sinica,
2006, 55(10): 4983-4986.
doi: 10.7498/aps.55.4983
|
| [16] |
Yuan Hong-Tao, Zhang Yao, Gu Jing-Hua. A study on the in-situ growth of highly oriented ZnO whisker. Acta Physica Sinica,
2004, 53(2): 646-650.
doi: 10.7498/aps.53.646
|
| [17] |
Ma Hong, Chen Si-Hai, Jin Jin-Yan, Yi Xin-Jian, Zhu Guang-Xi. Study on 1.55μ m AlGaInAs-InP polarization-insensitive semiconductor optical amplifier and its temperature characterizatics. Acta Physica Sinica,
2004, 53(6): 1868-1872.
doi: 10.7498/aps.53.1868
|
| [18] |
Huang Jin-Song, Dong Xun, Liu Xiang-Lin, Xu Zhong-Ying, Ge Wei-Kun. A study of the growth and optical properties of AlInGaN alloys. Acta Physica Sinica,
2003, 52(10): 2632-2637.
doi: 10.7498/aps.52.2632
|
| [19] |
Li Pei-Xian, Hao Yue, Fan Long, Zhang Jin-Cheng, Zhang Jin-Feng, Zhang Xiao-Ju. AlGaN/GaN heterojunction wavefunction half analytic model based on quantum distu rbance. Acta Physica Sinica,
2003, 52(12): 2985-2988.
doi: 10.7498/aps.52.2985
|
| [20] |
ZHANG DE-HENG, LIU YUN-YAN, ZHANG DE-JUN. THE UV PHOTOCONDUCTIVITY OF n-TYPE GaN FILMSDEPOSITED BY MOCVD. Acta Physica Sinica,
2001, 50(9): 1800-1804.
doi: 10.7498/aps.50.1800
|
下载:
