渐变型量子阱垒层厚度对GaN基双波长发光二极管发光特性调控的研究

陈峻; 范广涵; 张运炎

doi:10.7498/aps.61.178504

摘要

采用软件理论分析的方法对渐变型量子阱垒层厚度的InGaN双波长发光二极(LED)的载流子浓度分布、能带结构、自发发射谱、内量子效率、发光功率及溢出电子流等进行研究.分析结果表明, 增大量子阱垒层厚度会影响空穴在各量子阱的注入情况, 对双波长LED各量子阱中空穴浓度分布的均衡性及双波长发光光谱的调控起到一定作用,但会导致内量子效率严重下降; 而当以特定的方式从n电极到p电极方向递减渐变量子阱垒层厚度时, 活性层量子阱的溢出电子流得到有效的控制, 双发光峰强度达到基本一致, 同时芯片的内量子效率下降得到了有效控制, 且具备大驱动电流下较好的发光特性.

关键词:

Abstract

The electrical and optical characteristics of GaN-based dual-wavelength light-emitting diodes (LEDs) with the specific design of various thick barriers are investigated numerically. The simulation results show that the thickness of barrier plays a regulatory role in emission spectrum of the dual-wavelength LED. The internal quantum efficiency droop is improved and the two peaks of spectrum become uniform due to the thickness of barriers gradually decreasing from the n-side to the p-side in a specific way. The balanced distribution of carrier concentration and the enhancement of electron confinement could be the major physical mechanism behind these improvements. It is also shown that the better optical performance is achieved at the large current injection level.

Keywords:

作者及机构信息

1.
广东工业大学实验教学部, 广州 510006;

2.
华南师范大学光电子材料与技术研究所, 广州 510631

基金项目: 国家自然科学基金(批准号: 61176043); 广东省战略性新兴产业专项资金(批准号: 2010A081002005)和广东省教育部产学研结合计划(批准号: 2010B090400192)资助的课题.

Authors and contacts

1.
Experimental Teaching Center, Guangdong University of Technology, Guangzhou 510006, China;

2.
Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China

Funds: Project supported by the National Natural Science Foundation of China(Grant No. 61176043), the Fund for Strategic and Emerging Industries of Guangdong Province, China (Grant No. 2010A081002005), and the Program of Combination of Production and Research by Guangdong Province and Ministry of Education of China (Grant No. 2010B090400192).

参考文献

[1]	Mathew C, Schmid T, Kim K C, Hitoshi S, Natalie F, Hisashi M, Shuji N, Steven P D, James S S 2007 Jpn.J.Appl.Phys. 46 L126
[2]	Zhang G Y, Tong Y Z, Yang Z J, Jin S X, Li J, Gan Z Z 1997 Appl.Phys.Lett. 71 3376
[3]	Luo Y, Guo W P, Shao J P, Hu H, Han Y J, Xue S, Wang L, Sun C Z, Hao Z B 2004 Acta Phys.Sin. 53 2720 (in Chinese) [罗毅, 郭文平, 邵嘉平, 胡卉,韩彦军, 薛松, 汪莱, 孙长征, 郝智彪 2004 53 2720]
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[6]	Chen J F, Wang W X, Liu S H, Ren Z X 1998 Acta Phys.Sin. 47 1592 (in Chinese) [陈俊芳, 王卫乡, 刘颂豪, 任兆杏 1998 47 1592]
[7]	Liu N X, Wang H B, Liu J P, Niu N H, Han J, Sheng G D 2006 Acta Phys. Sin. 55 1424 (in Chinese) [刘乃鑫, 王怀兵, 刘建平, 牛南辉, 韩军, 沈光地 2006 55 1424]
[8]	Zhu H Y, Huang C H, Zhang G, Wei Y, Huang L X, Chen J,Chen W D, Chen Z Q 2007 Opt.Commun. 270 296
[9]	Luo M C, Wang X L, Li J M 2003 J. Cryst. Growth 249 1
[10]	Zhu H N, Xu Z, Zhao S L, Zhang F J, Kong C, Yan G, Gong W 2010 Acta Phys. Sin. 59 8093 (in Chinese) [朱海娜, 徐征, 赵谡玲, 张福俊, 孔超, 闫光, 龚伟 2010 59 8093]
[11]	Zheng Q H, Yin Y A, Zhu L H, Liu B L 2009 Appl. Phys. Lett. 94 222104
[12]	Li M C, Qiu Y X, Liu G J, Wang Y T, Zhang B S, Zhao L C 2009 J. Appl. Phys. 105 094903
[13]	Yamada M, Narukawa Y, Mukai T 2002 Jpn. J. Appl. Phys. 41 L246
[14]	Damilano B, Grandjean N, Pernot C, Massies J 2001 Jpn. J. Appl. Phys. 40 L918
[15]	Zhang Y Y, Fan G H 2011 Acta Phys. Sin. 60 018502 (in Chinese) [张运炎, 范广涵 2011 60 018502]
[16]	Zhang Y Y, Fan G H, Zhang Y, Zheng S W 2011 Acta Phys. Sin. 60 028503 (in Chinese) [张运炎, 范广涵, 章勇, 郑树文 2011 60 028503]
[17]	Shei S C, Sheu J K, Tsai C M, Lai W C, Lee M L, Kuo C H 2006 Jpn. J. Appl. Phys. 45 2463
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[19]	Kim M H, Schubert M F, Qi D, Jong K K, Schubert F, Joachim P 2007 Appl. Phys. Lett. 91 183507
[20]	Li Y L, Gessmann T, Schubert E F, Sheu J K 2003 J. Appl. Phys. 94 2167
[21]	Simon L Z 1998 Crosslight (Burnaby: Crosslight Software Inc.)
[22]	Piprek J, Nakamura S 2002 IEE Proc.-Optoelectron. 149 145
[23]	Thahab S M, Hassan H A, Hassan Z 2007 Opt. Express 15 2380
[24]	Chuang S L, Chang C S 1997 Semico. Sci. and Technol. 12 252
[25]	Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491
[26]	Piprek J 2003 Semiconductor Optoelectronic Devices (San Diego: Academic Press) p43
[27]	Vurgaftman I, Meyer J R 2003 J. Appl. Phys. 94 3675
[28]	Goano M, Bellotti E, Ghillino E, Garetto C, Ghione G, Brennan K F 2000 J.Appl.Phys.88 6476
[29]	Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[30]	Fiorentini V, Bernardini F, Ambacher O 2002 Appl. Phys. Lett. 80 1204
[31]	Kuo Y K, Chang J Y, Tsai M C, Yen S H 2009 Appl. Phys. Lett. 95 011116
[32]	Schubert M F, Xu J, Kim J K, Schubert E F, Kim M H, Yoon S, Lee S M, Sone C, Sakong T, Park Y 2008 Appl. Phys. Lett. 93 041102

施引文献

[1]	Mathew C, Schmid T, Kim K C, Hitoshi S, Natalie F, Hisashi M, Shuji N, Steven P D, James S S 2007 Jpn.J.Appl.Phys. 46 L126
[2]	Zhang G Y, Tong Y Z, Yang Z J, Jin S X, Li J, Gan Z Z 1997 Appl.Phys.Lett. 71 3376
[3]	Luo Y, Guo W P, Shao J P, Hu H, Han Y J, Xue S, Wang L, Sun C Z, Hao Z B 2004 Acta Phys.Sin. 53 2720 (in Chinese) [罗毅, 郭文平, 邵嘉平, 胡卉,韩彦军, 薛松, 汪莱, 孙长征, 郝智彪 2004 53 2720]
[4]	Zhang G Y, Yang Z J, Tong Y Z, Qin Z X, Hu X D, Chen Z Z, Ding X M, Lu M, Li Z H, Yu T J, Zhang L, Gan Z Z, Zhao Y, Yang C F 2003 Opt. Mater. 23 183
[5]	Zhu L H, Cai J F, Li X Y, Deng B, Liu B L 2010 Acta Phys.Sin. 59 4996 (in Chinese) [朱丽虹, 蔡加法, 李晓莹, 邓彪, 刘宝林 2010 59 4996]
[6]	Chen J F, Wang W X, Liu S H, Ren Z X 1998 Acta Phys.Sin. 47 1592 (in Chinese) [陈俊芳, 王卫乡, 刘颂豪, 任兆杏 1998 47 1592]
[7]	Liu N X, Wang H B, Liu J P, Niu N H, Han J, Sheng G D 2006 Acta Phys. Sin. 55 1424 (in Chinese) [刘乃鑫, 王怀兵, 刘建平, 牛南辉, 韩军, 沈光地 2006 55 1424]
[8]	Zhu H Y, Huang C H, Zhang G, Wei Y, Huang L X, Chen J,Chen W D, Chen Z Q 2007 Opt.Commun. 270 296
[9]	Luo M C, Wang X L, Li J M 2003 J. Cryst. Growth 249 1
[10]	Zhu H N, Xu Z, Zhao S L, Zhang F J, Kong C, Yan G, Gong W 2010 Acta Phys. Sin. 59 8093 (in Chinese) [朱海娜, 徐征, 赵谡玲, 张福俊, 孔超, 闫光, 龚伟 2010 59 8093]
[11]	Zheng Q H, Yin Y A, Zhu L H, Liu B L 2009 Appl. Phys. Lett. 94 222104
[12]	Li M C, Qiu Y X, Liu G J, Wang Y T, Zhang B S, Zhao L C 2009 J. Appl. Phys. 105 094903
[13]	Yamada M, Narukawa Y, Mukai T 2002 Jpn. J. Appl. Phys. 41 L246
[14]	Damilano B, Grandjean N, Pernot C, Massies J 2001 Jpn. J. Appl. Phys. 40 L918
[15]	Zhang Y Y, Fan G H 2011 Acta Phys. Sin. 60 018502 (in Chinese) [张运炎, 范广涵 2011 60 018502]
[16]	Zhang Y Y, Fan G H, Zhang Y, Zheng S W 2011 Acta Phys. Sin. 60 028503 (in Chinese) [张运炎, 范广涵, 章勇, 郑树文 2011 60 028503]
[17]	Shei S C, Sheu J K, Tsai C M, Lai W C, Lee M L, Kuo C H 2006 Jpn. J. Appl. Phys. 45 2463
[18]	David A, Grundmann M J, Kaeding J F, Gardner N F, Mihopoulos T G, Krames M R, Mihopoulos T G, Krames M R 2008 Appl. Phys. Lett. 92 053502
[19]	Kim M H, Schubert M F, Qi D, Jong K K, Schubert F, Joachim P 2007 Appl. Phys. Lett. 91 183507
[20]	Li Y L, Gessmann T, Schubert E F, Sheu J K 2003 J. Appl. Phys. 94 2167
[21]	Simon L Z 1998 Crosslight (Burnaby: Crosslight Software Inc.)
[22]	Piprek J, Nakamura S 2002 IEE Proc.-Optoelectron. 149 145
[23]	Thahab S M, Hassan H A, Hassan Z 2007 Opt. Express 15 2380
[24]	Chuang S L, Chang C S 1997 Semico. Sci. and Technol. 12 252
[25]	Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491
[26]	Piprek J 2003 Semiconductor Optoelectronic Devices (San Diego: Academic Press) p43
[27]	Vurgaftman I, Meyer J R 2003 J. Appl. Phys. 94 3675
[28]	Goano M, Bellotti E, Ghillino E, Garetto C, Ghione G, Brennan K F 2000 J.Appl.Phys.88 6476
[29]	Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[30]	Fiorentini V, Bernardini F, Ambacher O 2002 Appl. Phys. Lett. 80 1204
[31]	Kuo Y K, Chang J Y, Tsai M C, Yen S H 2009 Appl. Phys. Lett. 95 011116
[32]	Schubert M F, Xu J, Kim J K, Schubert E F, Kim M H, Yoon S, Lee S M, Sone C, Sakong T, Park Y 2008 Appl. Phys. Lett. 93 041102

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