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A 2D simulation of electrical and optical characteristics of dual-wavelength LED with GaN interval layers and quantum well barrier layers of different doping types was conducted with APSYS software. It showed that with the use of p-type doped GaN interval layer and quantum well barrier layers, we can greatly improve the hole concentration in QWs and reduce the electron overflow of the chip. We can also increase the luminous intensity and dramatically improve the dropping of internal quantum efficiency of the LED when the current increases.
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Keywords:
- GaN /
- doping types /
- numerical simulation /
- dual-wavelength LED
[1] Zheng D S, Qian K Y, Luo Y 2005 Semiconductor Optoelectronics 26 87
[2] Shen G D, Zhang N G, Liu J P, Niu N H, Li T, Xing Y H, Lin Q M, Guo X 2007 Semiconductor Optoelectronics 28 349
[3] Yamada M, Narukawa Y, Mukai T 2002 J. Appl. Phys. 41 246
[4] Qi Y D, Liang H, Tang W, Lu Z D, Kei May Lau 2004 Journal of Crystal Growth 272 333
[5] Damilano B, Grandjean N, Pernot C, Massies J 2001 J. Appl. Phys. 40 918
[6] Li Y L, Gessmann T H 2003 J. Appl. Phys. 94 2167
[7] Yamada M, Narukawa Y, Mukai T 2002 J. Appl. Phys. 41 246
[8] Chen H S, Yeh D M, Lu C F 2006 IEEE Photon. Technol. Lett. 18 1430
[9] Ozden I, Makarona E, Nurmikko A V, Takeuchi T, Krames M 2001 Appl. Phys. Lett. 79 2532
[10] Crosslight Software Inc http: //www.crosslight.com 2,2010]
[11] Chuang S L, Chang C S 1997 Semicond. Sci. and Technol. 12 252
[12] Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491
[13] Goano M, Bellotti E, Ghillino E, Garetto C, Ghione G, Brennan K F 2000 J. Appl. Phys. 88 6476
[14] Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[15] Fiorentini V, Bernardini F, Ambacher O 2002 App. Phys. Lett. 80 1204
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[1] Zheng D S, Qian K Y, Luo Y 2005 Semiconductor Optoelectronics 26 87
[2] Shen G D, Zhang N G, Liu J P, Niu N H, Li T, Xing Y H, Lin Q M, Guo X 2007 Semiconductor Optoelectronics 28 349
[3] Yamada M, Narukawa Y, Mukai T 2002 J. Appl. Phys. 41 246
[4] Qi Y D, Liang H, Tang W, Lu Z D, Kei May Lau 2004 Journal of Crystal Growth 272 333
[5] Damilano B, Grandjean N, Pernot C, Massies J 2001 J. Appl. Phys. 40 918
[6] Li Y L, Gessmann T H 2003 J. Appl. Phys. 94 2167
[7] Yamada M, Narukawa Y, Mukai T 2002 J. Appl. Phys. 41 246
[8] Chen H S, Yeh D M, Lu C F 2006 IEEE Photon. Technol. Lett. 18 1430
[9] Ozden I, Makarona E, Nurmikko A V, Takeuchi T, Krames M 2001 Appl. Phys. Lett. 79 2532
[10] Crosslight Software Inc http: //www.crosslight.com 2,2010]
[11] Chuang S L, Chang C S 1997 Semicond. Sci. and Technol. 12 252
[12] Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491
[13] Goano M, Bellotti E, Ghillino E, Garetto C, Ghione G, Brennan K F 2000 J. Appl. Phys. 88 6476
[14] Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[15] Fiorentini V, Bernardini F, Ambacher O 2002 App. Phys. Lett. 80 1204
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