[1] |
Tang Wen-Hui, Liu Bang-Wu, Zhang Bo-Cheng, Li Min, Xia Yang. Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition. Acta Physica Sinica,
2017, 66(9): 098101.
doi: 10.7498/aps.66.098101
|
[2] |
Wang Jian, Chuai Rong-Yan. Theoretical relationship between p-type polysilicon thin film gauge factor and doping concentration. Acta Physica Sinica,
2017, 66(24): 247201.
doi: 10.7498/aps.66.247201
|
[3] |
Li Zhi-Guo, Liu Wei, He Jing-Jing, Li Zu-Liang, Han An-Jun, Zhang Chao, Zhou Zhi-Qiang, Zhang Yi, Sun Yun. Influences of deposition rate in second stage on the Cu(In,Ga)Se2 thin film and device prepared by low-temperature process. Acta Physica Sinica,
2013, 62(3): 038803.
doi: 10.7498/aps.62.038803
|
[4] |
Feng Jia-Heng, Tang Li-Dan, Liu Bang-Wu, Xia Yang, Wang Bing. Low-temperature growth of AlN thin films by plasma-enhanced atomic layer deposition. Acta Physica Sinica,
2013, 62(11): 117302.
doi: 10.7498/aps.62.117302
|
[5] |
Li Wei-Cong, Zou Zhi-Qiang, Wang Dan, Shi Gao-Ming. STM study of growth of manganese silicide thin films on a Si(100)-21 surface. Acta Physica Sinica,
2012, 61(6): 066801.
doi: 10.7498/aps.61.066801
|
[6] |
Kang Kun-Yong, Deng Shu-Kang, Shen Lan-Xian, Sun Qi-Li, Hao Rui-Ting, Hua Qi-Lin, Tang Run-Sheng, Yang Pei-Zhi, Li Ming. Effect of annealing on crystalline property of poly-Si thin-film by Ge-induce crystallization. Acta Physica Sinica,
2012, 61(19): 198101.
doi: 10.7498/aps.61.198101
|
[7] |
Su Yuan-Jun, Xu Jun, Zhu Ming, Fan Peng-Hui, Dong Chuang. Hydrogenated poly-crystalline silicon thin films deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering. Acta Physica Sinica,
2012, 61(2): 028104.
doi: 10.7498/aps.61.028104
|
[8] |
Liu Zhao-Jun, Meng Zhi-Guo, Zhao Sun-Yun, Kwok Hoi Sing, Wu Chun-Ya, Xiong Shao-Zhen. Crystallized poly-silicon thin film laterally induced by the Ni/Si oxide source. Acta Physica Sinica,
2010, 59(4): 2775-2782.
doi: 10.7498/aps.59.2775
|
[9] |
Luo Chong, Meng Zhi-Guo, Wang Shuo, Xiong Shao-Zhen. Preparation of poly-slicon thin film by aluminum induced crystallization based on Al-salt solution. Acta Physica Sinica,
2009, 58(9): 6560-6565.
doi: 10.7498/aps.58.6560
|
[10] |
Meng Li-Jun, Zhang Kai-Wang, Zhong Jian-Xin. Molecular dynamics simulation of formation of silicon nanoparticles on surfaces of carbon nanotubes. Acta Physica Sinica,
2007, 56(2): 1009-1013.
doi: 10.7498/aps.56.1009
|
[11] |
Zhao Shu-Yun, Wu Chun-Ya, Li Juan, Liu Jian-Ping, Zhang Xiao-Dan, Zhang Li-Zhu, Meng Zhi-Guo, Xiong Shao-Zhen. The research on metal induced crystallization with chemical source. Acta Physica Sinica,
2006, 55(2): 825-829.
doi: 10.7498/aps.55.825
|
[12] |
Huang Rui, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Zhu Zu-Song, Wei Jun-Hong. Effect of hydrogen dilution on structure and optical properties of polycrystalline silicon films. Acta Physica Sinica,
2006, 55(5): 2523-2528.
doi: 10.7498/aps.55.2523
|
[13] |
Gu Jin-Hua, Zhou Yu-Qin, Zhu Mei-Fang, Li Guo-Hua, Ding Kun, Zhou Bing-Qing, Liu Feng-Zhen, Liu Jin-Long, Zhang Qun-Fang. Study on growth mechanism of low-temperature prepared microcrystalline Si thin f ilms. Acta Physica Sinica,
2005, 54(4): 1890-1894.
doi: 10.7498/aps.54.1890
|
[14] |
Zhu Zu-Song, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Qiu Gui-Ming, Huang Rui, Yu Chu-Ying. The light-stability of polycrystalline silicon films deposited at low temperatures from SiCl4/H2 mixture. Acta Physica Sinica,
2005, 54(8): 3805-3809.
doi: 10.7498/aps.54.3805
|
[15] |
Wang Xiao-Qiang, Li Jun-Shuai, Chen Qiang, Qi Jing, Yin Min, He De-Yan. Aluminum-induced crystallization during deposition of silicon films by inductively coupled plasma CVD. Acta Physica Sinica,
2005, 54(1): 269-273.
doi: 10.7498/aps.54.269
|
[16] |
Lin Xuan-Ying, Huang Chuang-Jun, Lin Kui-Xun, Yu Yun-Peng, Yu Chu-Ying, Huang Rui. Raman analysis of microstructure of polycrystalline silicon films deposited at low-temperatures from SiCl4-H2. Acta Physica Sinica,
2004, 53(5): 1558-1561.
doi: 10.7498/aps.53.1558
|
[17] |
Chen Yi-Kuang, Lin Kui-Xun, Luo Zhi, Liang Rui-Sheng, Zhou Fu-Fang. Aluminum-induced rapid crystallization of a-Si films at low temperatures in an electric field and microstructure analyses of the crystallized films. Acta Physica Sinica,
2004, 53(2): 582-586.
doi: 10.7498/aps.53.582
|
[18] |
Huang Rui, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Yao Ruo-He, Huang Wen-Yong, Wei Jun-Hong, Wang Zhao-Kui, Yu Chu-Ying. Control of grain size during low-temperature growth of polycrystalline silicon films. Acta Physica Sinica,
2004, 53(11): 3950-3955.
doi: 10.7498/aps.53.3950
|
[19] |
Wang Liu-Jiu, Zhu Mei-Fang, Liu Feng-Zhen, Liu Jin-Long, Han Yi-Qin. Structual and optoelectronic properties of polycrystalline silicon thin films p repared by hot-wire chemical vapor deposition at low temperatures. Acta Physica Sinica,
2003, 52(11): 2934-2938.
doi: 10.7498/aps.52.2934
|
[20] |
ZHU XIAO-BIN, WANG WEI. KINETICS AND SCALING BEHAVIOR OF REACTION PERCOLATION BALLISTIC SURFACE GROWTH. Acta Physica Sinica,
1997, 46(10): 1990-1998.
doi: 10.7498/aps.46.1990
|