[1] |
Zhang Xue, Kim Bokyung, Lee Hyeonju, Park Jaehoon. Low-temperature rapid preparation of high-performance indium oxide thin films and transistors based on solution technology. Acta Physica Sinica,
2024, 73(9): 096802.
doi: 10.7498/aps.73.20240082
|
[2] |
Kuang Dan, Xu Shuang, Shi Da-Wei, Guo Jian, Yu Zhi-Nong. High performance amorphous Ga2O3 thin film solar blind ultraviolet photodetectors decorated with Al nanoparticles. Acta Physica Sinica,
2023, 72(3): 038501.
doi: 10.7498/aps.72.20221476
|
[3] |
Jing Bin, Xu Meng, Peng Cong, Chen Long-Long, Zhang Jian-Hua, Li Xi-Feng. Sol-gel indium-zinc-tin-oxide thin film transistor pixel array with superior stabilityunder negative bias illumination stress. Acta Physica Sinica,
2022, 71(13): 138502.
doi: 10.7498/aps.71.20220154
|
[4] |
Wang Ji-Ming, Chen Ke, Xie Wei-Guang, Shi Ting-Ting, Liu Peng-Yi, Zheng Yi-Fan, Zhu Rui. Research progress of solution processed all-inorganic perovskite solar cell. Acta Physica Sinica,
2019, 68(15): 158806.
doi: 10.7498/aps.68.20190355
|
[5] |
Wang Jian, Chuai Rong-Yan. Theoretical relationship between p-type polysilicon thin film gauge factor and doping concentration. Acta Physica Sinica,
2017, 66(24): 247201.
doi: 10.7498/aps.66.247201
|
[6] |
Zhang Shi-Yu, Yu Zhi-Nong, Cheng Jin, Wu De-Long, Li Xu-Yang, Xue Wei. Effects of annealing temperature and Ga content on properties of solution-processed InGaZnO thin film. Acta Physica Sinica,
2016, 65(12): 128502.
doi: 10.7498/aps.65.128502
|
[7] |
Su Yuan-Jun, Xu Jun, Zhu Ming, Fan Peng-Hui, Dong Chuang. Hydrogenated poly-crystalline silicon thin films deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering. Acta Physica Sinica,
2012, 61(2): 028104.
doi: 10.7498/aps.61.028104
|
[8] |
Kang Kun-Yong, Deng Shu-Kang, Shen Lan-Xian, Sun Qi-Li, Hao Rui-Ting, Hua Qi-Lin, Tang Run-Sheng, Yang Pei-Zhi, Li Ming. Effect of annealing on crystalline property of poly-Si thin-film by Ge-induce crystallization. Acta Physica Sinica,
2012, 61(19): 198101.
doi: 10.7498/aps.61.198101
|
[9] |
Chen Ying-Tian, T. H. Ho. Comprehensive Survey for the Frontier Disciplines. Acta Physica Sinica,
2011, 60(7): 078104.
doi: 10.7498/aps.60.078104
|
[10] |
Liu Zhao-Jun, Meng Zhi-Guo, Zhao Sun-Yun, Kwok Hoi Sing, Wu Chun-Ya, Xiong Shao-Zhen. Crystallized poly-silicon thin film laterally induced by the Ni/Si oxide source. Acta Physica Sinica,
2010, 59(4): 2775-2782.
doi: 10.7498/aps.59.2775
|
[11] |
Tang Zheng-Xia, Shen Hong-Lie, Jiang Feng, Fang Ru, Lu Lin-Feng, Huang Hai-Bin, Cai Hong. Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile. Acta Physica Sinica,
2010, 59(12): 8770-8775.
doi: 10.7498/aps.59.8770
|
[12] |
Li He, Li Xue-Dong, Li Juan, Wu Chun-Ya, Meng Zhi-Guo, Xiong Shao-Zhen, Zhang Li-Zhu. Investigation on the improvement of the stability and uniformity of solution-based metal-induced crystallization poly-Si using surface-embellishment. Acta Physica Sinica,
2008, 57(4): 2476-2480.
doi: 10.7498/aps.57.2476
|
[13] |
Zhao Shu-Yun, Wu Chun-Ya, Liu Zhao-Jun, Li Xue-Dong, Wang Zhong, Meng Zhi-Guo, Xiong Shao-Zhen, Zhang Fang. Study on the large grain size poly-Si prepared by metal induced crystallization using nickel chemical source. Acta Physica Sinica,
2006, 55(11): 6095-6100.
doi: 10.7498/aps.55.6095
|
[14] |
Huang Rui, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Zhu Zu-Song, Wei Jun-Hong. Effect of hydrogen dilution on structure and optical properties of polycrystalline silicon films. Acta Physica Sinica,
2006, 55(5): 2523-2528.
doi: 10.7498/aps.55.2523
|
[15] |
Zhao Shu-Yun, Wu Chun-Ya, Li Juan, Liu Jian-Ping, Zhang Xiao-Dan, Zhang Li-Zhu, Meng Zhi-Guo, Xiong Shao-Zhen. The research on metal induced crystallization with chemical source. Acta Physica Sinica,
2006, 55(2): 825-829.
doi: 10.7498/aps.55.825
|
[16] |
Zhu Zu-Song, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Qiu Gui-Ming, Huang Rui, Yu Chu-Ying. The light-stability of polycrystalline silicon films deposited at low temperatures from SiCl4/H2 mixture. Acta Physica Sinica,
2005, 54(8): 3805-3809.
doi: 10.7498/aps.54.3805
|
[17] |
Huang Rui, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Yao Ruo-He, Huang Wen-Yong, Wei Jun-Hong, Wang Zhao-Kui, Yu Chu-Ying. Control of grain size during low-temperature growth of polycrystalline silicon films. Acta Physica Sinica,
2004, 53(11): 3950-3955.
doi: 10.7498/aps.53.3950
|
[18] |
Chen Yi-Kuang, Lin Kui-Xun, Luo Zhi, Liang Rui-Sheng, Zhou Fu-Fang. Aluminum-induced rapid crystallization of a-Si films at low temperatures in an electric field and microstructure analyses of the crystallized films. Acta Physica Sinica,
2004, 53(2): 582-586.
doi: 10.7498/aps.53.582
|
[19] |
Wang Liu-Jiu, Zhu Mei-Fang, Liu Feng-Zhen, Liu Jin-Long, Han Yi-Qin. Structual and optoelectronic properties of polycrystalline silicon thin films p repared by hot-wire chemical vapor deposition at low temperatures. Acta Physica Sinica,
2003, 52(11): 2934-2938.
doi: 10.7498/aps.52.2934
|
[20] |
HE DE-YAN. CONTROL OF THE SURFACE REACTIONS DURING THE LOW-TEMPERATURE GROWTH OF POLYCRYSTALLINE SILICON FILMS. Acta Physica Sinica,
2001, 50(4): 779-783.
doi: 10.7498/aps.50.779
|