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The crystalline AlN thin film was fabricated on Si(100) substrates by plasma-enhanced atomic layer deposition. Its growth rate was illustrated by spectroscopic ellipsometer. And the surface morphology, crystal structure and composition were characterized by atomic force microscopy, X-ray diffraction, high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. Results show that the lowest temperature for deposition of the crystalline AlN thin film is 200 ℃, and the film coverage on the substrate surface is continuous and homogeneous. The film prepared with a homogeneous concentration distribution is polycrystalline with a hexagonal wurtzite structure. High resolution Al2p and N1s spectra confirm the presence of AlN with peaks located at 74.1 eV and 397.0 eV, respectively.
[1] Schulz M 1999 Nature. Vol. 399 729
[2] Perros A, Bosund M, Sajavaara T, Laitinen M, Sainiemi L, Huhtio T, Lipsanen H 2012 American Vacuum Society. Vol. 30 011504
[3] Jussila H, Mattila P, Oksanen J, Perros A, Riikonen J, Bosund M, Varpula A, Huhtio T, Lipsanen H, Sopanen M 2012 Appl. Phys. Lett. 100 071606
[4] Hwang J, Schaff W J, Green B M, Cha H, Eastman L F 2004 Solid-State Electronics 48 363
[5] Zhou L, Ni X, Ozgur U, Morkoc H, Devaty R P, Choyke W J, Smith David J 2009 Journal of Crystal Growth 311 1456
[6] Zhou C H, Zheng Y D, Deng Y Z, Kong Y C, Chen P, Xi D J, Gu S L, Shen B, Zhang R, Jiang R L, Han P, Shi Y 2004 Acta Phys. Sin. 53 3888 (in Chinese) [周春红, 郑有, 邓咏桢, 孔月婵, 陈鹏, 席冬娟, 顾书林, 沈波, 张荣, 江若琏, 韩平, 施毅 2004 53 3888]
[7] Claudel A, Blanquet E, Chaussende D, Boichot R, Doisneau B, Berthome G, Crisci A, Mank H, Moisson C, Pique D, Pons M 2011 Journal of Crystal Growth 335 17
[8] Chen Z, Newman S, Brown D, Chung R, Keller S, Mishra U K, Denbaars S P, Nakamura S 2008 Appl. Phys. Lett. 93 191906
[9] Reid K G, Dip A, Sasaki S, Triyoso D, Samavedam S, Gilmer D, Gondran C F H 2009 Thin Solid Films 517 2712
[10] Marichy C, Bechelany M, Pinna N 2012 Adv. Mater. 24 1017
[11] George S M 2010 Chem. Rev. 110 111
[12] Ozgit C, Donmez I, Alevli M, Biyikli N 2012 Thin Solid Films 520 2750
[13] Gu J H, ZhouY Q, Zhu M F, Li G H, Ding K, Zhou B Q, Liu F Z, Liu J L, Zhang Q F 2005 Acta Phys. Sin. 54 1890 (in Chinese) [谷锦华, 周玉琴, 朱美芳, 李国华, 丁琨, 周炳卿, 刘丰珍, 刘金龙, 张群芳 2005 54 1890]
[14] Tian M B 2006 Thin Film Technologies and Materials (1st Ed.) (Beijing: Tsinghua University Press) p271 (in Chinese ) [田民波 2006 薄膜技术与薄膜材料 (第一版) (北京: 清华大学出版社) 第271页]
[15] Dalmau R, Collazo R, Mita R, Sitar Z 2006 Journal of Electronic Materials 36 414
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[1] Schulz M 1999 Nature. Vol. 399 729
[2] Perros A, Bosund M, Sajavaara T, Laitinen M, Sainiemi L, Huhtio T, Lipsanen H 2012 American Vacuum Society. Vol. 30 011504
[3] Jussila H, Mattila P, Oksanen J, Perros A, Riikonen J, Bosund M, Varpula A, Huhtio T, Lipsanen H, Sopanen M 2012 Appl. Phys. Lett. 100 071606
[4] Hwang J, Schaff W J, Green B M, Cha H, Eastman L F 2004 Solid-State Electronics 48 363
[5] Zhou L, Ni X, Ozgur U, Morkoc H, Devaty R P, Choyke W J, Smith David J 2009 Journal of Crystal Growth 311 1456
[6] Zhou C H, Zheng Y D, Deng Y Z, Kong Y C, Chen P, Xi D J, Gu S L, Shen B, Zhang R, Jiang R L, Han P, Shi Y 2004 Acta Phys. Sin. 53 3888 (in Chinese) [周春红, 郑有, 邓咏桢, 孔月婵, 陈鹏, 席冬娟, 顾书林, 沈波, 张荣, 江若琏, 韩平, 施毅 2004 53 3888]
[7] Claudel A, Blanquet E, Chaussende D, Boichot R, Doisneau B, Berthome G, Crisci A, Mank H, Moisson C, Pique D, Pons M 2011 Journal of Crystal Growth 335 17
[8] Chen Z, Newman S, Brown D, Chung R, Keller S, Mishra U K, Denbaars S P, Nakamura S 2008 Appl. Phys. Lett. 93 191906
[9] Reid K G, Dip A, Sasaki S, Triyoso D, Samavedam S, Gilmer D, Gondran C F H 2009 Thin Solid Films 517 2712
[10] Marichy C, Bechelany M, Pinna N 2012 Adv. Mater. 24 1017
[11] George S M 2010 Chem. Rev. 110 111
[12] Ozgit C, Donmez I, Alevli M, Biyikli N 2012 Thin Solid Films 520 2750
[13] Gu J H, ZhouY Q, Zhu M F, Li G H, Ding K, Zhou B Q, Liu F Z, Liu J L, Zhang Q F 2005 Acta Phys. Sin. 54 1890 (in Chinese) [谷锦华, 周玉琴, 朱美芳, 李国华, 丁琨, 周炳卿, 刘丰珍, 刘金龙, 张群芳 2005 54 1890]
[14] Tian M B 2006 Thin Film Technologies and Materials (1st Ed.) (Beijing: Tsinghua University Press) p271 (in Chinese ) [田民波 2006 薄膜技术与薄膜材料 (第一版) (北京: 清华大学出版社) 第271页]
[15] Dalmau R, Collazo R, Mita R, Sitar Z 2006 Journal of Electronic Materials 36 414
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