[1] |
Wang Yi-Lin, Lan Zi-Xuan, Du Hui-Wei, Zhao Lei, Ma Zhong-Quan. Phosphorus oxides in heavily doped polysilicon films. Acta Physica Sinica,
2022, 71(18): 188201.
doi: 10.7498/aps.71.20220706
|
[2] |
Wang Jian, Chuai Rong-Yan. Theoretical relationship between p-type polysilicon thin film gauge factor and doping concentration. Acta Physica Sinica,
2017, 66(24): 247201.
doi: 10.7498/aps.66.247201
|
[3] |
Zhou Hai-Liang, Gu Qing-Tian, Zhang Qing-Hua, Liu Bao-An, Zhu Li-Li, Zhang Li-Song, Zhang Fang, Xu Xin-Guang, Wang Zheng-Ping, Sun Xun, Zhao Xian. Raman spectroscopic study on the micro-structure of NH4H2PO4 and ND4D2PO4 crystals. Acta Physica Sinica,
2015, 64(19): 197801.
doi: 10.7498/aps.64.197801
|
[4] |
Zhang Hai-Long, Liu Feng-Zhen, Zhu Mei-Fang. Influence of shadowing effect on morphology and microstructure of silicon thin film in chemical vapor deposition. Acta Physica Sinica,
2014, 63(17): 177303.
doi: 10.7498/aps.63.177303
|
[5] |
Jiang Li-Li, Lu Zhong-Lin, Zhang Feng-Ming, Lu Xiong. Effects of low-temperature annealing phosphorous gettering process on the electrical properties of multi-crystalline silicon with a low minority carrier lifetime. Acta Physica Sinica,
2013, 62(11): 110101.
doi: 10.7498/aps.62.110101
|
[6] |
Su Yuan-Jun, Xu Jun, Zhu Ming, Fan Peng-Hui, Dong Chuang. Hydrogenated poly-crystalline silicon thin films deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering. Acta Physica Sinica,
2012, 61(2): 028104.
doi: 10.7498/aps.61.028104
|
[7] |
Tang Zheng-Xia, Shen Hong-Lie, Jiang Feng, Fang Ru, Lu Lin-Feng, Huang Hai-Bin, Cai Hong. Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile. Acta Physica Sinica,
2010, 59(12): 8770-8775.
doi: 10.7498/aps.59.8770
|
[8] |
Liu Li-Ying, Zhang Jia-Liang, Guo Qing-Chao, Wang De-Zhen. Diagnostics of the atmospheric pressure plasma jets for plasma enhanced chemical vapor deposition of polycrystalline silicon thin film. Acta Physica Sinica,
2010, 59(4): 2653-2660.
doi: 10.7498/aps.59.2653
|
[9] |
Liu Zhao-Jun, Meng Zhi-Guo, Zhao Sun-Yun, Kwok Hoi Sing, Wu Chun-Ya, Xiong Shao-Zhen. Crystallized poly-silicon thin film laterally induced by the Ni/Si oxide source. Acta Physica Sinica,
2010, 59(4): 2775-2782.
doi: 10.7498/aps.59.2775
|
[10] |
Luo Chong, Meng Zhi-Guo, Wang Shuo, Xiong Shao-Zhen. Preparation of poly-slicon thin film by aluminum induced crystallization based on Al-salt solution. Acta Physica Sinica,
2009, 58(9): 6560-6565.
doi: 10.7498/aps.58.6560
|
[11] |
Huang Rui, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Zhu Zu-Song, Wei Jun-Hong. Effect of hydrogen dilution on structure and optical properties of polycrystalline silicon films. Acta Physica Sinica,
2006, 55(5): 2523-2528.
doi: 10.7498/aps.55.2523
|
[12] |
Qi Jing, Jin Jing, Hu Hai-Long, Gao Ping-Qi, Yuan Bao-He, He De-Yan. Effect of H2 on polycrystalline Si films deposited by plasma-enhanced CVD using Ar-diluted SiH4. Acta Physica Sinica,
2006, 55(11): 5959-5963.
doi: 10.7498/aps.55.5959
|
[13] |
Zhu Zu-Song, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Qiu Gui-Ming, Huang Rui, Yu Chu-Ying. The light-stability of polycrystalline silicon films deposited at low temperatures from SiCl4/H2 mixture. Acta Physica Sinica,
2005, 54(8): 3805-3809.
doi: 10.7498/aps.54.3805
|
[14] |
Huang Rui, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Yao Ruo-He, Huang Wen-Yong, Wei Jun-Hong, Wang Zhao-Kui, Yu Chu-Ying. Control of grain size during low-temperature growth of polycrystalline silicon films. Acta Physica Sinica,
2004, 53(11): 3950-3955.
doi: 10.7498/aps.53.3950
|
[15] |
Wang Liu-Jiu, Zhu Mei-Fang, Liu Feng-Zhen, Liu Jin-Long, Han Yi-Qin. Structual and optoelectronic properties of polycrystalline silicon thin films p repared by hot-wire chemical vapor deposition at low temperatures. Acta Physica Sinica,
2003, 52(11): 2934-2938.
doi: 10.7498/aps.52.2934
|
[16] |
Zhang Hong-Tao, Xu Chong-Yang, Zhou Xue-Cheng, Wang Chang-An, Zhao Bo-Fang, Zhou Xue-Mei, Zeng Xiang-Bin. . Acta Physica Sinica,
2002, 51(2): 304-309.
doi: 10.7498/aps.51.304
|
[17] |
XIN YU, NING ZHAO-YUAN, GAN ZHAO-QIANG, LU XIN-HUA, FANG LIANG, CHENG SHAN-HUA. INFRARED ANALYSIS OF BOND CONFIGURATION FOR THE a-C∶F∶H FILMS DEPOSITED AT VARIABLE CHF3/CH4 FLOW RATIOS. Acta Physica Sinica,
2001, 50(12): 2492-2496.
doi: 10.7498/aps.50.2492
|
[18] |
HE DE-YAN. CONTROL OF THE SURFACE REACTIONS DURING THE LOW-TEMPERATURE GROWTH OF POLYCRYSTALLINE SILICON FILMS. Acta Physica Sinica,
2001, 50(4): 779-783.
doi: 10.7498/aps.50.779
|
[19] |
ZHANG TING-QING, LI JIAN-JUN, LIU JIA-LU, ZHAO YUAN-FU. ANALYSIS AND SIMULATION OF FLUORINE MIGRATION CHARACTERISTICS OF BF+2-IMPLANTED INTO POLYCRYSTALLINE SILICON GATE. Acta Physica Sinica,
1998, 47(4): 645-651.
doi: 10.7498/aps.47.645
|
[20] |
HE YU-LIANG, ZHOU HENG-NAN, LIU XIANG-NA, CHENG GUANG-XU, YU SHI-DONG. STUDIES AND ANALYSIS FOR MICROSTRUCTURES OF MICRO-CRYSTALLIZATION PROCESS OF AMORPHOUS SILICON FILMS. Acta Physica Sinica,
1990, 39(11): 1796-1802.
doi: 10.7498/aps.39.1796
|