| [1] |
Li Yang-Fan, Guo Hong-Xia, Zhang Hong, Bai Ru-Xue, Zhang Feng-Qi, Ma Wu-Ying, Zhong Xiang-Li, Li Ji-Fang, Lu Xiao-Jie. Heavy ion single event effect in double-trench SiC metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica,
2024, 73(2): 026103.
doi: 10.7498/aps.73.20231440
|
| [2] |
Zhou Yue, Hu Zhi-Yuan, Bi Da-Wei, Wu Ai-Min. Progress of radiation effects of silicon photonics devices. Acta Physica Sinica,
2019, 68(20): 204206.
doi: 10.7498/aps.68.20190543
|
| [3] |
Peng Chao1\2, En Yun-Fei, Li Bin, Lei Zhi-Feng, Zhang Zhan-Gang, He Yu-Juan, Huang Yun. Radiation induced parasitic effect in silicon-on-insulator metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2018, 67(21): 216102.
doi: 10.7498/aps.67.20181372
|
| [4] |
Jiang Ke, Lu Wu, Hu Tian-Le, Wang Xin, Guo Qi, He Cheng-Fa, Liu Mo-Han, Li Xiao-Long. Radiation damage effect and post-annealing treatments of NPN-input bipolar operational amplifier in electron radiation environment. Acta Physica Sinica,
2015, 64(13): 136103.
doi: 10.7498/aps.64.136103
|
| [5] |
Yang Shuai, Tang Xiao-Yan, Zhang Yu-Ming, Song Qing-Wen, Zhang Yi-Men. Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFET. Acta Physica Sinica,
2014, 63(20): 208501.
doi: 10.7498/aps.63.208501
|
| [6] |
Fan Min-Min, Xu Jing-Ping, Liu Lu, Bai Yu-Rong, Huang Yong. Models on threshold voltage/subthreshold swing and structural design of high-k gate dielectric GeOI MOSFET. Acta Physica Sinica,
2014, 63(8): 087301.
doi: 10.7498/aps.63.087301
|
| [7] |
Hu Hui-Yong, Liu Xiang-Yu, Lian Yong-Chang, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin. Study on the influence of γ -ray total dose radiation effect on the threshold voltage and transconductance of the strained Si p-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2014, 63(23): 236102.
doi: 10.7498/aps.63.236102
|
| [8] |
Liu Xiang-Yu, Hu Hui-Yong, Zhang He-Ming, Xuan Rong-Xi, Song Jian-Jun, Shu Bin, Wang Bin, Wang Meng. Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltage. Acta Physica Sinica,
2014, 63(23): 237302.
doi: 10.7498/aps.63.237302
|
| [9] |
Liu Hong-Xia, Wang Zhi, Zhuo Qing-Qing, Wang Qian-Qiong. Influence of channel length on PD SOI PMOS devices under total dose irradiation. Acta Physica Sinica,
2014, 63(1): 016102.
doi: 10.7498/aps.63.016102
|
| [10] |
Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing. Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor. Acta Physica Sinica,
2013, 62(10): 108501.
doi: 10.7498/aps.62.108501
|
| [11] |
Sun Peng, Du Lei, Chen Wen-Hao, He Liang, Zhang Xiao-Fang. A radiation degradation model of metal-oxide-semiconductor field effect transistor. Acta Physica Sinica,
2012, 61(10): 107803.
doi: 10.7498/aps.61.107803
|
| [12] |
Gao Bo, Liu Gang, Wang Li-Xin, Han Zheng-Sheng, Zhang Yan-Fei, Wang Chun-Ling, Wen Jing-Chao. Research on the total dose effects for domestic VDMOS devices used in satellite. Acta Physica Sinica,
2012, 61(17): 176107.
doi: 10.7498/aps.61.176107
|
| [13] |
Fan Xue, Li Wei, Li Ping, Zhang Bin, Xie Xiao-Dong, Wang Gang, Hu Bin, Zhai Ya-Hong. Total ionizing dose effects on n-channel metal oxide semiconductor transistors with annular-gate and ring-gate layouts. Acta Physica Sinica,
2012, 61(1): 016106.
doi: 10.7498/aps.61.016106
|
| [14] |
Lan Bo, Gao Bo, Cui Jiang-Wei, Li Ming, Wang Yi-Yuan, Yu Xue-Feng, Ren Di-Yuan. Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2011, 60(6): 068702.
doi: 10.7498/aps.60.068702
|
| [15] |
Qu Jiang-Tao, Wang Xiao-Yan, Zhang He-Ming, Wang Guan-Yu, Song Jian-Jun, Qin Shan-Shan. Drain-induced barrier-lowering effects on threshold voltage in short-channel strained Si metal-oxide semiconductor field transistor. Acta Physica Sinica,
2011, 60(2): 027102.
doi: 10.7498/aps.60.027102
|
| [16] |
Zhai Ya-Hong, Li Ping, Zhang Guo-Jun, Luo Yu-Xiang, Fan Xue, Hu Bin, Li Jun-Hong, Zhang Jian, Su Ping. Radiation-resistant bipolar n-p-n transistor. Acta Physica Sinica,
2011, 60(8): 088501.
doi: 10.7498/aps.60.088501
|
| [17] |
He Bao-Ping, Ding Li-Li, Yao Zhi-Bin, Xiao Zhi-Gang, Huang Shao-Yan, Wang Zu-Jun. Three-dimensional simulation of total dose effects on ultra-deep submicron devices. Acta Physica Sinica,
2011, 60(5): 056105.
doi: 10.7498/aps.60.056105
|
| [18] |
Liu Hong-Xia, Yin Xiang-Kun, Liu Bing-Jie, Hao Yue. Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor. Acta Physica Sinica,
2010, 59(12): 8877-8882.
doi: 10.7498/aps.59.8877
|
| [19] |
Quan Rong-Hui, Han Jian-Wei, Huang Jian-Guo, Zhang Zhen-Long. Modeling analysis of radiation induced conductivity in electrical insulator. Acta Physica Sinica,
2007, 56(11): 6642-6647.
doi: 10.7498/aps.56.6642
|
| [20] |
ZHANG TING-QING, LIU CHUAN-YANG, LIU JIA-LU, WANG JIAN-PING, HUANG ZHI, XU NA-JUN, HE BAO-PING, PENG HONG-LUN, YAO YU-JUAN. RADIATION EFFECTS OF MOS DEVICE AT LOW DOSE RATE AND LOW TEMPERATURE. Acta Physica Sinica,
2001, 50(12): 2434-2438.
doi: 10.7498/aps.50.2434
|
下载:
