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In this paper, the ionizing damage effects and the annealing behaviors of an import producti, p-type metal-oxide-semiconductor field-effect transistor (PMOSFET), an unhardened 4007 circuit under different doses are investigated. We measure the sub-threshold I-V characteristic curves of PMOSFET under different bias doses. The dependence of the drift of threshold voltage on total dose is discussed. We also observe the relationship between the parameter and the annealing time. The experiment results show that the PMOSFET of this kind can enhance low dose rate sensitivity (ELDRS) effect. The interface-trap formation by H+ transmission in the SiO2 is explained.We believe that the interface trap is a primary reason to induce ELDRS effect of PMOSFET. We also discuss the physical model of enhancing low dose rate sensitivity effect of PMOSFET.
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Keywords:
- p-type metal-oxide-semiconductor field-effect transistor /
- 60Co γ-ray /
- total-dose irradiation damage effects /
- enhanced low dose rate sensitivity
[1] Sun J, Guo Q, Zhang J, Ren D Y, Lu W, Yu X F, Wen L, Wang G L, Zheng Y Z 2009 Microelectronics 39 128 (in Chinese) [孙 静、郭 旗、张 军、任迪远、陆 妩、余学锋、文 林、王改丽、郑玉展 2009 微电子学 39 128]
[2] Fan L, Ren D Y, Guo Q, Yan R L, Zhu G W, Wang S J, Liang J B 2002 Nucl. Electron. Detect. Technol. 22 289 (in Chinese) [范 隆、任迪远、郭 旗、严荣良、朱光武、王世金、梁金宝 2002 核电子学与探测技术 22 289]
[3] Fleetwood D M, Winokur P S, Schwank J R 1988 IEEE Trans. Nucl. Sci. 35 1497
[4] Kim S J, Seon J, Min K W, Shin Y H, Choe W 2003 Radiation and its Effects on Components and Systems Conference 669 Huis Ter Duin, The Netherlands, 15—19 September 2003
[5] Bogorad A L, Likar J J, Moyer S K, Ditzler A J, Doorley G P, Herschitz R 2008 Radiation Effects Data Workshop 124
[6] Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X F, He C F 2009 Acta Phys. Sin. 58 5572 (in Chinese) [郑玉展、陆 妩、任迪远、王义元、郭 旗、余学锋、何承发 2009 58 5572]
[7] Chen W H, Du L, Zhuang Y Q, Bao J L, He L, Zhang T F, Zhang X 2009 Acta Phys. Sin. 58 4090 (in Chinese) [陈伟华、杜 磊、庄奕琪、包军林、何 亮、张天福、张 雪 2009 58 4090]
[8] Wang J P, Xu N J, Zhang T Q, Tang H L, Liu J L, Liu C Y, Yao Y J, Peng H L, He B P, Zhang Z X 2000 Acta Phys. Sin. 49 1331 (in Chinese) [王剑屏、徐娜军、张廷庆、汤华莲、刘家璐、刘传洋、姚育娟、彭宏论、何宝平、张正选 2000 49 1331]
[9] Mcwhorter P J, Winokur P S 1986 Appl. Phys. Lett. 48 133
[10] Fan L, Jin T, He C F, Yan R L, Shen Z K 1998 Nucl. Tech. 21 534 (in Chinese) [范 隆、靳 涛、何承发、严荣良、沈志康 1998 核技术 21 534]
[11] Rashkeev S N, Cirba C R, Fleetwood D M, Schrimpf R D, Witczak S C, Michez A, Pantelides S T 2002 IEEE Trans. Nucl. Sci. 49 2650
[12] Mrstik B J, Rendell R W 1991 Appl. Phys. Lett. 59 3012
[13] Witczak S C, Lacoe R C, Mayer D C, Fleetwood D M, Schrimpf R D, Galloway K F 1998 IEEE Trans. Nucl. Sci. 45 2339
[14] Rashkeev S N, Fleetwood D M, Schrimpf R D, Pantelides S T 2001 Phys. Rev. Lett. 87 165506
[15] Bunson P E, Di Ventra M, Pantelides S T, Fleetwood D M, Schrimpf R D 2000 IEEE Trans. Nucl. Sci. 47 2289
[16] Lan B 2010 M. S. Dissertation (Urumqi: Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences) (in Chinese) [兰 博 2010 硕士学位论文(乌鲁木齐:中国科学院新疆理化技术研究所)]
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[1] Sun J, Guo Q, Zhang J, Ren D Y, Lu W, Yu X F, Wen L, Wang G L, Zheng Y Z 2009 Microelectronics 39 128 (in Chinese) [孙 静、郭 旗、张 军、任迪远、陆 妩、余学锋、文 林、王改丽、郑玉展 2009 微电子学 39 128]
[2] Fan L, Ren D Y, Guo Q, Yan R L, Zhu G W, Wang S J, Liang J B 2002 Nucl. Electron. Detect. Technol. 22 289 (in Chinese) [范 隆、任迪远、郭 旗、严荣良、朱光武、王世金、梁金宝 2002 核电子学与探测技术 22 289]
[3] Fleetwood D M, Winokur P S, Schwank J R 1988 IEEE Trans. Nucl. Sci. 35 1497
[4] Kim S J, Seon J, Min K W, Shin Y H, Choe W 2003 Radiation and its Effects on Components and Systems Conference 669 Huis Ter Duin, The Netherlands, 15—19 September 2003
[5] Bogorad A L, Likar J J, Moyer S K, Ditzler A J, Doorley G P, Herschitz R 2008 Radiation Effects Data Workshop 124
[6] Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X F, He C F 2009 Acta Phys. Sin. 58 5572 (in Chinese) [郑玉展、陆 妩、任迪远、王义元、郭 旗、余学锋、何承发 2009 58 5572]
[7] Chen W H, Du L, Zhuang Y Q, Bao J L, He L, Zhang T F, Zhang X 2009 Acta Phys. Sin. 58 4090 (in Chinese) [陈伟华、杜 磊、庄奕琪、包军林、何 亮、张天福、张 雪 2009 58 4090]
[8] Wang J P, Xu N J, Zhang T Q, Tang H L, Liu J L, Liu C Y, Yao Y J, Peng H L, He B P, Zhang Z X 2000 Acta Phys. Sin. 49 1331 (in Chinese) [王剑屏、徐娜军、张廷庆、汤华莲、刘家璐、刘传洋、姚育娟、彭宏论、何宝平、张正选 2000 49 1331]
[9] Mcwhorter P J, Winokur P S 1986 Appl. Phys. Lett. 48 133
[10] Fan L, Jin T, He C F, Yan R L, Shen Z K 1998 Nucl. Tech. 21 534 (in Chinese) [范 隆、靳 涛、何承发、严荣良、沈志康 1998 核技术 21 534]
[11] Rashkeev S N, Cirba C R, Fleetwood D M, Schrimpf R D, Witczak S C, Michez A, Pantelides S T 2002 IEEE Trans. Nucl. Sci. 49 2650
[12] Mrstik B J, Rendell R W 1991 Appl. Phys. Lett. 59 3012
[13] Witczak S C, Lacoe R C, Mayer D C, Fleetwood D M, Schrimpf R D, Galloway K F 1998 IEEE Trans. Nucl. Sci. 45 2339
[14] Rashkeev S N, Fleetwood D M, Schrimpf R D, Pantelides S T 2001 Phys. Rev. Lett. 87 165506
[15] Bunson P E, Di Ventra M, Pantelides S T, Fleetwood D M, Schrimpf R D 2000 IEEE Trans. Nucl. Sci. 47 2289
[16] Lan B 2010 M. S. Dissertation (Urumqi: Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences) (in Chinese) [兰 博 2010 硕士学位论文(乌鲁木齐:中国科学院新疆理化技术研究所)]
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