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A metal mesh transparent conductive film with high shielding performance is prepared based on the crack template method. The shielding performance of the metal mesh transparent conductive film prepared by the existing crack template method needs improving due to the thin thickness of the metal mesh. In this work, the crack depth factor is added to the distribution curve of the relationship between the spin coating speed of the cracked material and the crack pattern, and the appropriate crack material and spin coating scheme are selected to prepare an ideal crack template with random pattern distribution. A metal layer with a thickness of 1 μm is deposited inside and outside the crack template gap by magnetron sputtering, and the method of ultrasonic cleaning combined with organic solvent is introduced to efficiently remove the crack glue template, and a metal mesh transparent conductive film sample is obtained. The measured light transmittance of the metal mesh transparent conductive film sample exceeds 85% while the square resistance value remains around 2.8 Ω/□, which has good light transmittance and electromagnetic shielding performance. The shielding performance is improved by preparing thickened metal mesh transparent conductive films, which provide a reference for the subsequent preparation of metal mesh transparent conductive films with high shielding performance based on the crack template method.
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Keywords:
- crack template method /
- metal grid /
- high shielding /
- magnetron sputtering
[1] Rao K D M, Gupta R, Kulkarni G U 2014 Adv. Mater. Inter. 1 1400090
Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
[23] Voronin A S, Fadeev Y V, Dobrosmyslov S S, Simunin M M, Khartov S V 2020 J. Phys. Conf. Ser. 1679 042087
Google Scholar
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图 1 不同观测尺度下裂纹图形的电子显微镜观测结果 (a) 100 μm; (b) 200 μm; (c) 500 μm; (d) 1 mm
Figure 1. Electron microscope observation results of the crack pattern at different observation scales: (a) 100 μm; (b) 200 μm; (c) 500 μm; (d) 1 mm.
图 2 磁控溅射后沉积金属样品图
Figure 2. Diagram of the metal sample deposited after magnetron sputtering.
图 3 在不同观测尺度下, 磁控溅射后沉积金属裂纹图案观测结果图 (a) 5 μm; (b) 20 μm; (c) 100 μm; (d) 1 mm
Figure 3. Observation diagram of the metal crack pattern deposited after magnetron sputtering at different observation scales: (a) 5 μm; (b) 20 μm; (c) 100 μm; (d) 1 mm.
图 4 金属网格透明导电薄膜样品图
Figure 4. Diagram of metal mesh transparent conductive film.
图 5 在不同观测尺度下, 金属网格透明导电薄膜样品电子显微镜观测结果图 (a) 100 μm; (b) 200 μm; (c) 500 μm; (d) 1 mm
Figure 5. Electron microscope observation of metal mesh transparent conductive film sample at different observation scales: (a) 100 μm; (b) 200 μm; (c) 500 μm; (d) 1 mm.
图 6 金属网格透明导电薄膜制备过程中电子显微镜观测结果图 (a) 10 μm观测尺度下裂纹图案; (b) 10 μm观测尺度下金属沉积图案; (c) 10 μm观测尺度下金属网格图案; (d) 50 μm观测尺度下金属网格图案
Figure 6. Electron microscope observation results during the preparation of metal mesh transparent conductive films: (a) Crack pattern at 10 μm observation scale; (b) metal deposition patterns at 10 μm observation scale; (c) metal mesh pattern at 10 μm observation scale; (d) metal mesh pattern at 50 μm observation scale.
图 7 制备得到的金属网格样品的方阻测试曲线结果图
Figure 7. Results of the square resistance test curve of the prepared metal mesh sample.
图 8 制备得到的金属网格样品的电磁屏蔽效能结果图
Figure 8. Results of electromagnetic shielding effectiveness of the prepared metal mesh samples.
图 9 金属网格薄膜样品的透光率测试结果图
Figure 9. Light transmittance test results of metal mesh film samples.
图 10 裂纹胶旋涂转速与裂纹周期、缝宽及缝深的关系曲线图
Figure 10. Relationship curves of the rotational speed of the crack adhesive spin coating to the crack period, crack width and crack depth
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[1] Rao K D M, Gupta R, Kulkarni G U 2014 Adv. Mater. Inter. 1 1400090
Google Scholar
[2] Rao K D M, Hunger C, Gupta R, Kulkarni G U, Thelakkat M 2014 Phys. Chem. Chem. Phys. 16 15107
Google Scholar
[3] Seo K W, Noh Y J, Na S I, Kim H K 2016 Sol. Energy Mater Sol. Cells 155 51
Google Scholar
[4] Jang J, Im H G, Jin J, Lee J, Lee J Y, Bae B S 2016 ACS Appl. Mater. Inter. 8 27035
Google Scholar
[5] Li L J, Zhang B, Zou B H, Xie R J, Zhang T, Li S, Zheng B, Wu J S, Weng J N, Zhang W N, Huang W, Huo F W 2017 ACS Appl. Mater. Inter. 9 39110
Google Scholar
[6] Kim W K, Lee S, Lee H D, Hee Park I, Seong Bae J, Woo Lee T, Kim J Y, Hun Park J, Chan Cho Y, Ryong Cho C, Jeong S Y 2015 Sci. Rep. 5 10715
Google Scholar
[7] Han B, Pei K, Huang Y L, Zhang X J, Rong Q K, Lin Q G, Guo Y F, Sun T Y, Guo C F, Carnahan D, Giersig M, Wang Y, Gao J W, Ren Z F, Kempa K 2014 Adv. Mater. 26 873
Google Scholar
[8] Gao J W, Xian Z K, Zhou G F, Liu J M, Kempa K 2017 Adv. Funct. Mater. 28 1705023
Google Scholar
[9] Han Y, Lin J, Liu Y, Fu H, Ma Y, Jin P, Tan J B 2016 Sci. Rep. 6 25601
Google Scholar
[10] Kiruthika S, Gupta R, Rao K D M, Chakraborty S, Padmavathy N, Kulkarni G U 2014 J. Mater. Chem. C 2 2089
Google Scholar
[11] Xian Z K, Han B, Li S R, Yang C B, Wu S J, Lu X B, Gao X S, Zeng M, Wang Q M, Bai P F, Naughton M J, Zhou G F, Liu J M, Kempa K, Gao J W 2017 Adv. Mater. Technol. 2 1700061
Google Scholar
[12] Li P, Zhao Y, Ma J G, Yang Y, Xu H Y, Liu Y C 2020 Adv. Mater. Technol. 5 2070008
Google Scholar
[13] Lee D, Go S, Hwang G, Chin B D, Lee D H 2013 Langmuir 29 12259
Google Scholar
[14] Kiruthika S, Gupta R, Kulkarni G U 2014 RSC Adv. 4 49745
Google Scholar
[15] Gupta N, Rao K D M, Gupta R, Krebs F C, Kulkarni G U 2017 ACS Appl. Mater. Inter. 9 8634
Google Scholar
[16] Yang C, Merlo J M, Kong J, Xian Z K, Han B, Zhou G F, Gao J W, Burns M J, Kempa K, Naughton M J 2018 Phys. Status Solidi A 215 1700504
Google Scholar
[17] Han B, Peng Q, Li R P, Rong Q K, Ding Y, Akinoglu E M, Wu, X Y, Wang X, Lu X B, Wang Q, Zhou G F, Liu J M, Ren Z F, Giersig M, Herczynski A, Kempa K, Gao J W 2016 Nat. Commun. 7 12825
Google Scholar
[18] Qiang Y X, Zhu C H, Wu Y P, Cui S, Liu Y 2018 RSC Adv. 8 23066
Google Scholar
[19] Dong G P, Liu S, Pan M Q, Zhou G F, Liu J M, Kempa K, Gao J W 2019 Adv. Mater. Technol. 4 1900056
Google Scholar
[20] Peng Q, Li S R, Han B, Rong Q K, Lu X B, Wang Q M, Zeng M, Zhou G F, Liu J M, Kempa K, Gao J W 2016 Adv. Mater. Technol. 1 1600095
Google Scholar
[21] Guo C F, Sun T Y, Liu Q H, Suo Z G, Ren Z F 2014 Nat. Commun. 5 3121
Google Scholar
[22] Kiruthika S, Rao K D M, Kumar A, Gupta R, Kulkarni G U 2014 Mater. Res. Express 1 26301
Google Scholar
[23] Voronin A S, Fadeev Y V, Dobrosmyslov S S, Simunin M M, Khartov S V 2020 J. Phys. Conf. Ser. 1679 042087
Google Scholar
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