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采用磁控溅射方法在Si（111）基片上制备金属锰膜，用椭圆偏振光谱在入射光子能量为2.04.0 eV范围内研究了溅射功率对薄膜光学性质的影响. 利用德鲁得-洛伦兹色散模型对椭偏数据进行拟合，结果表明在测量范围内随溅射功率增加薄膜的折射率减小；消光系数随入射光子能量增加先增加后减小，在3.0 eV附近处出现极大值，并且极大值所处的位置随溅射功率增加而向低能方向移动，这主要与溅射沉积的锰薄膜的质量有关，且随溅射功率的增加薄膜的消光系数逐渐趋近于金属锰的数值. 研究结果还表明溅射功率的增加减少了薄膜中的空隙，有利于薄膜的生长.
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关键词:
- 磁控溅射 /
- 金属锰膜 /
- 椭圆偏振光谱 /
- 德鲁得-洛伦兹色散模型
In this paper, spectroscopic ellipsometry with an incident photon energy range of 2.04.0 eV is used to investigate the optical properties of Mn films deposited on silicon substrates at different sputtering powers. The ellipsometric data are analyzed by Drude and Lorenz oscillators dispersion model. The results show that the refractive index of the film decreases with the increase of the sputtering power. The extinction coefficient of the Mn film increases when the energy of photons is less than 3.0 eV and decreases when the energy of photons is in a range of 3.04.0 eV, and it arrives at an extremum at about 3.0 eV. The extremum shows a red-shift with the sputting power increasing from 60 to 100 W, which is dependent on the quality of the Mn film. With the increase of sputtering power, the extinction coefficient of the film approaches to that of metal manganese. The results also imply that the voids in the film decrease with the increase of the sputtering power, which is conducive to the growth of the films.-
Keywords:
- magnetron sputtering /
- metal manganese film /
- spectroscopic ellipsometry /
- Drude and Lorenz oscillatorsdispersion model
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[8] Mahan J E 2004 Thin Solid Films 461 152
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[10] Shi X H, Zamanipour Z, Krasinski J S, Tree A, Vashaee D 2012 J. Electron. Mater. 41 2331
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[18] Azzam R M, Bashara N M 1987 Ellipsometry and Polarized Light (Amsterdam: Elsevier Science Publishing Co. Inc.) p179
[19] Fujiwara H, Koh J, Rovira P I, Collins R W 2000 Phys. Rev. B 61 10832
[20] Aspnes D E, Theeten J B, Hottier F 1979 Phys. Rev. B 20 3292
[21] Vedam K 1998 Thin Solid Films 313 1
[22] Woollam J A, Johs B D, Herzinger C M, Hilfiker J N, Synowicki R A, Bungay C L 1999 Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series Denver, Colorado, July 18–19 1999, p3
[23] Li X L, Gu J H, Gao H B, Chen Y S, Gao X Y, Yang S E, Lu J X, Li R, Jiao Y C 2012 Acta Phys. Sin. 61 036802 (in Chinese) [李新利, 谷锦华, 高海波, 陈永生, 郜小勇, 杨仕娥, 卢景霄, 李瑞, 焦岳超 2012 61 036802]
[24] Zhang J M, Gao X Y, Yang Y, Chen L Y 2003 J. Infrared Millim. Waves 22 77 (in Chinese) [张晋敏, 郜小勇, 杨宇, 陈良尧 2003 红外与毫米波学报 22 77]
[25] Wronkowska A A, Wronkowski A, Kukli N S K, Senski M, Skowro N S L 2010 Appl. Surf. Sci. 256 4839
[26] Sun Z Q, Cao C B, Song X P, Cai Q 2008 Acta Opt. Sin. 28 403 (in Chinese) [孙兆奇, 曹春斌, 宋学萍, 蔡琪 2008 光学学报 28 403]
[27] Chen D, Mo D 1987 Acta Scientiarum Naturaliun Universitatis Sunyatseni 2 51 (in Chinese) [陈东, 莫党 1987 中山大学学报(自然科学版) 2 51]
[28] Hetrick R E, Lambe J 1975 Phys. Rev. B 11 1273
[29] O’ Bryan H M 1936 J. Opt. Soc. Am. 26 122
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[1] Tu H L, Wang L, Du J 2009 Rare Metals 33 453 (in Chinese) [屠海令, 王磊, 杜军 2009 稀有金属 33 453]
[2] Ma Q, Yan B J, Kang M K, Yang Y Q 1999 Rare Metal Mat. Eng. 28 10 (in Chinese) [马勤, 阎秉钧, 康沫狂, 杨延清 1999 稀有金属材料与工程 28 10]
[3] Higgins J M, Schmitt A L, Guzei I A, Guzei, Ilia A, Song J 2008 J. Am. Chem. Soc. 130 16086
[4] Peng Z L, Liang S 2008 Chin. Phys. Lett. 25 4113
[5] Peng Z L, Liang S, Deng L G 2009 Chin. Phys. Lett. 26 127301
[6] Yang M J, Shen Q, Zhang L M 2011 Chin. Phys. B 20 106202
[7] Shi X H, Zamanipour Z, Dehkordi A M, Ede K F, Krasinski J S, Vashaee D 2012 Green Technologies Conference Tulsa, USA, April 19–20, 2012 p1
[8] Mahan J E 2004 Thin Solid Films 461 152
[9] Petrova L I, Dudkin L D, Fedorov M I, Solomkin F Y, Zaitsev V K, Eremin I S 2002 Tech. Phys. 47 550
[10] Shi X H, Zamanipour Z, Krasinski J S, Tree A, Vashaee D 2012 J. Electron. Mater. 41 2331
[11] Kamilov T S, Khusanov A Z, Bakhadyrkhanov M K, Kobilov D K 2002 Tech. Phys. Lett. 28 929
[12] Shukurova D M, Orekhov A S, Sharipov B Z, Klechkovskaya V V, Kamilov T S 2011 Tech. Phys. 56 1423
[13] Luo W H, Li H, Lin Z B, Tang X F 2010 Acta Phys. Sin. 59 8783 (in Chinese) [罗文辉, 李涵, 林泽冰, 唐新峰 2010 59 8783]
[14] Naito M, Nakanishi R, Machida N, Shigematsu T, Ishimaru M, Valdez J A, Sickafus K E 2012 Nucl. Instrum. Methods Phys. Res. 272 446
[15] Zhou A J, Zhao X B, Zhu T J, Dasgupta T, Stiewe C, Hassdorf R, Mueller E 2010 Intermetallics 18 2051
[16] An T H, Choi S M, Seo S W, Park C, Kim I H, Kim S U 2013 J. Electron. Mater. 42 2269
[17] Hou Q R, Zhao W, Chen Y B, He Y J 2009 Int. J. Mod. Phys. B 23 3331
[18] Azzam R M, Bashara N M 1987 Ellipsometry and Polarized Light (Amsterdam: Elsevier Science Publishing Co. Inc.) p179
[19] Fujiwara H, Koh J, Rovira P I, Collins R W 2000 Phys. Rev. B 61 10832
[20] Aspnes D E, Theeten J B, Hottier F 1979 Phys. Rev. B 20 3292
[21] Vedam K 1998 Thin Solid Films 313 1
[22] Woollam J A, Johs B D, Herzinger C M, Hilfiker J N, Synowicki R A, Bungay C L 1999 Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series Denver, Colorado, July 18–19 1999, p3
[23] Li X L, Gu J H, Gao H B, Chen Y S, Gao X Y, Yang S E, Lu J X, Li R, Jiao Y C 2012 Acta Phys. Sin. 61 036802 (in Chinese) [李新利, 谷锦华, 高海波, 陈永生, 郜小勇, 杨仕娥, 卢景霄, 李瑞, 焦岳超 2012 61 036802]
[24] Zhang J M, Gao X Y, Yang Y, Chen L Y 2003 J. Infrared Millim. Waves 22 77 (in Chinese) [张晋敏, 郜小勇, 杨宇, 陈良尧 2003 红外与毫米波学报 22 77]
[25] Wronkowska A A, Wronkowski A, Kukli N S K, Senski M, Skowro N S L 2010 Appl. Surf. Sci. 256 4839
[26] Sun Z Q, Cao C B, Song X P, Cai Q 2008 Acta Opt. Sin. 28 403 (in Chinese) [孙兆奇, 曹春斌, 宋学萍, 蔡琪 2008 光学学报 28 403]
[27] Chen D, Mo D 1987 Acta Scientiarum Naturaliun Universitatis Sunyatseni 2 51 (in Chinese) [陈东, 莫党 1987 中山大学学报(自然科学版) 2 51]
[28] Hetrick R E, Lambe J 1975 Phys. Rev. B 11 1273
[29] O’ Bryan H M 1936 J. Opt. Soc. Am. 26 122
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