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Hong Zi-Fan, Chen Hai-Feng, Jia Yi-Fan, Qi Qi, Liu Ying-Ying, Guo Li-Xin, Liu Xiang-Tai, Lu Qin, Li Li-Jun, Wang Shao-Qing, Guan Yun-He, Hu Qi-Ren. Characteristics of Ga2O3 epitaxial films on seed layer grown by magnetron sputtering. Acta Physica Sinica,
2020, 69(22): 228103.
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Tong Guo-Xiang, Li Yi, Wang Feng, Huang Yi-Ze, Fang Bao-Ying, Wang Xiao-Hua, Zhu Hui-Qun, Liang Qian, Yan Meng, Qin Yuan, Ding Jie, Chen Shao-Juan, Chen Jian-Kun, Zheng Hong-Zhu, Yuan Wen-Rui. Preparation of W-doped VO2/FTO composite thin films by DC magnetron sputtering and characterization analyses of the films. Acta Physica Sinica,
2013, 62(20): 208102.
doi: 10.7498/aps.62.208102
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Zhang Chuan-Jun, Wu Yun-Hua, Cao Hong, Gao Yan-Qing, Zhao Shou-Ren, Wang Shan-Li, Chu Jun-Hao. Effects of different substrates and CdCl2 treatment on the properties of CdS thin films deposited by magnetron sputtering. Acta Physica Sinica,
2013, 62(15): 158107.
doi: 10.7498/aps.62.158107
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Su Yuan-Jun, Xu Jun, Zhu Ming, Fan Peng-Hui, Dong Chuang. Hydrogenated poly-crystalline silicon thin films deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering. Acta Physica Sinica,
2012, 61(2): 028104.
doi: 10.7498/aps.61.028104
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Lin Zhi-Yu, Zhang Jin-Cheng, Xu Sheng-Rui, Lü Ling, Liu Zi-Yang, Ma Jun-Cai, Xue Xiao-Yong, Xue Jun-Shuai, Hao Yue. TEM study of GaN films on vicinal sapphire (0001) substrates by MOCVD. Acta Physica Sinica,
2012, 61(18): 186103.
doi: 10.7498/aps.61.186103
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Luo Xiao-Dong, Di Guo-Qing. Ge and Nb co-doped TiO2 films with narrow band gap and low resistivity prepared by sputtering. Acta Physica Sinica,
2012, 61(20): 206803.
doi: 10.7498/aps.61.206803
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Di Guo-Qing. Surface morphology and optical properties of Ta2O5 films prepared by radio frequency sputtering. Acta Physica Sinica,
2011, 60(3): 038101.
doi: 10.7498/aps.60.038101
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Ju Dong-Ying, Ding Wan-Yu, Chai Wei-Ping, Wang Hua-Lin. Composition and crystal structure of N doped TiO2 film deposited with different O2 flow rates. Acta Physica Sinica,
2011, 60(2): 028105.
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Li Lin-Na, Chen Xin-Liang, Wang Fei, Sun Jian, Zhang De-Kun, Geng Xin-Hua, Zhao Ying. Effects of hydrogen flux on aluminum doped zinc thin films by pulsed magnetron sputtering. Acta Physica Sinica,
2011, 60(6): 067304.
doi: 10.7498/aps.60.067304
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Cao Yue-Hua, Di Guo-Qing. Analysis of Y2O3 doped TiO2 films topography prepared by radio frequency magnetron sputtering. Acta Physica Sinica,
2011, 60(3): 037702.
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Li Sheng-Bin, Li Xiao-Na, Dong Chuang, Jiang Xin. Formation rule of β-FeSi2 phases in (Fe, M)Si2 ternary alloys. Acta Physica Sinica,
2010, 59(6): 4267-4278.
doi: 10.7498/aps.59.4267
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Ding Wan-Yu, Xu Jun, Lu Wen-Qi, Deng Xin-Lu, Dong Chuang. An XPS study on the structure of SiNx film deposited by microwave ECR magnetron sputtering. Acta Physica Sinica,
2009, 58(6): 4109-4116.
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Niu Hua-Lei, Li Xiao-Na, Hu Bing, Dong Chuang, Jiang Xin. Room-temperature photoluminescence analysis of nano-β-FeSi2/a-Si multilayer films. Acta Physica Sinica,
2009, 58(6): 4117-4122.
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Liu Feng, Meng Yue-Dong, Ren Zhao-Xing, Shu Xing-Sheng. Characterization of ZrN films deposited by ICP enhanced RF magnetron sputtering. Acta Physica Sinica,
2008, 57(3): 1796-1801.
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. The effect of temperature of substrate and oxygen partial pressure on V2O5 films fabricated by magnetron sputtering. Acta Physica Sinica,
2007, 56(12): 7255-7261.
doi: 10.7498/aps.56.7255
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Liu Zhi-Wen, Gu Jian-Feng, Sun Cheng-Wei, Zhang Qing-Yu. Study on nucleation and dynamic scaling of morphological evolution of ZnO film deposition by reactive magnetron sputtering. Acta Physica Sinica,
2006, 55(4): 1965-1973.
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Ding Wan-Yu, Xu Jun, Li Yan-Qin, Piao Yong, Gao Peng, Deng Xin-Lü, Dong Chuang. Characterization of silicon nitride films prepared by MW-ECR magnetron sputtering. Acta Physica Sinica,
2006, 55(3): 1363-1368.
doi: 10.7498/aps.55.1363
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Zhou Xiao-Li, Du Pi-Yi. CaCu33Ti44O1212 films prepared by magnetron s puttering. Acta Physica Sinica,
2005, 54(4): 1809-1813.
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2002, 51(2): 406-409.
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Li Xiao-Na, Nie Dong, Dong Chuang, Ma Teng-Cai, Jin Xing, Zhang Zhe. . Acta Physica Sinica,
2002, 51(1): 115-124.
doi: 10.7498/aps.51.115
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