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Niu Yue, Bao Wei-Min, Li Xiao-Ping, Liu Yan-Ming, Liu Dong-Lin. Numerical simulation and experimental study of high-power thermal equilibrium inductively coupled plasma. Acta Physica Sinica,
2021, 70(9): 095204.
doi: 10.7498/aps.70.20201610
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Yu Ming-Hao. Numerical investigation on interaction mechanisms between flow field and electromagnetic field for nonequilibrium inductively coupled plasma. Acta Physica Sinica,
2019, 68(18): 185202.
doi: 10.7498/aps.68.20190865
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Jiang Mei-Yan, Zhu Zheng-Jie, Chen Cheng-Ke, Li Xiao, Hu Xiao-Jun. Microstructural and electrochemical properties of sulfur ion implanted nanocrystalline diamond films. Acta Physica Sinica,
2019, 68(14): 148101.
doi: 10.7498/aps.68.20190394
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Wang Rui, Hu Xiao-Jun. The microstructural and electrochemical properties of oxygen ion implanted nanocrystalline diamond films. Acta Physica Sinica,
2014, 63(14): 148102.
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Yang Duo, Zhong Ning, Shang Hai-Long, Sun Shi-Yang, Li Ge-Yang. Microstructures and mechanical properties of (Ti, N)/Al nanocomposite films by magnetron sputtering. Acta Physica Sinica,
2013, 62(3): 036801.
doi: 10.7498/aps.62.036801
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Su Yuan-Jun, Xu Jun, Zhu Ming, Fan Peng-Hui, Dong Chuang. Hydrogenated poly-crystalline silicon thin films deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering. Acta Physica Sinica,
2012, 61(2): 028104.
doi: 10.7498/aps.61.028104
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Ju Dong-Ying, Ding Wan-Yu, Chai Wei-Ping, Wang Hua-Lin. Composition and crystal structure of N doped TiO2 film deposited with different O2 flow rates. Acta Physica Sinica,
2011, 60(2): 028105.
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Guo Quan-Sheng, Li Han, Su Xian-Li, Tang Xin-Feng. Microstructure and themoelectric properties of p-type filled skutterudite Ce0.3Fe1.5Co2.5Sb12 prepared by melt-spinning method. Acta Physica Sinica,
2010, 59(9): 6666-6672.
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Su Xian-Li, Tang Xin-Feng, Li Han. Effects of melt spinning process on microstructure and thermoelectric properties of n-type InSb compounds. Acta Physica Sinica,
2010, 59(4): 2860-2866.
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Mu Zong-Xin, Mu Xiao-Dong, Jia Li, Wang Chun, Dong Chuang. Electrostatic oscillation and coupling resonance in double trap of unbalanced magnetron sputtering. Acta Physica Sinica,
2010, 59(10): 7164-7169.
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Ding Wan-Yu, Xu Jun, Lu Wen-Qi, Deng Xin-Lu, Dong Chuang. An XPS study on the structure of SiNx film deposited by microwave ECR magnetron sputtering. Acta Physica Sinica,
2009, 58(6): 4109-4116.
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Gao Fei, Mao Ming, Ding Zhen-Feng, Wang You-Nian. Langmuir probe measurement and theoretical studies on inductively coupled plasma in Ar-N2 discharge. Acta Physica Sinica,
2008, 57(8): 5123-5129.
doi: 10.7498/aps.57.5123
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. Nano-β-FeSi2/a-Si multi-layered structure prepared by magnetron sputtering. Acta Physica Sinica,
2007, 56(12): 7188-7194.
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Ma Xiao-Tao, Zheng Wan-Hua, Ren Gang, Fan Zhong-Chao, Chen Liang-Hui. Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal. Acta Physica Sinica,
2007, 56(2): 977-981.
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Di Xiao-Lian, Xin Yu, Ning Zhao-Yuan. Effect of antenna configuration on power transfer efficiency for planar inductively coupled plasmas. Acta Physica Sinica,
2006, 55(10): 5311-5317.
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Ding Wan-Yu, Xu Jun, Li Yan-Qin, Piao Yong, Gao Peng, Deng Xin-Lü, Dong Chuang. Characterization of silicon nitride films prepared by MW-ECR magnetron sputtering. Acta Physica Sinica,
2006, 55(3): 1363-1368.
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Zhang Zhi-Guo, Liu Tian-Wei, Xu Jun, Deng Xin-Lu, Dong Chuang. Zr-N films prepared by MW-ECR PE-UNB alanced magnetron sputtering: plasma diagnostics and structure evolution. Acta Physica Sinica,
2005, 54(7): 3257-3262.
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Mu Zong-Xin, Li Guo-Qing, Qin Fu-Wen, Huang Kai-Yu, Che De-Liang. The model of the magnetic mirror effect in the unbalanced magnetron sputtering ion beams. Acta Physica Sinica,
2005, 54(3): 1378-1384.
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Wang Yong-Qian, Chen Wei-De, Chen Chang-Yong, Diao Hong-Wei, Zhang Shi-Ben, Xu Yan-Yue, Kong Guang-Lin, Liao Xian-Bo. . Acta Physica Sinica,
2002, 51(7): 1564-1570.
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LIN XIU-HUA, LIU XIN. INFLUENCE OF MULTI-ARC ION PLATING TECHNIQUE ON THE INTERFACE AND MICROSTRUCTURE OF TiN/Ti AND Cr/Cu CONTACT SYSTEM. Acta Physica Sinica,
2000, 49(11): 2220-2224.
doi: 10.7498/aps.49.2220
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