Recent progress of non-thermal plasma material surface treatment and functionalization

Zhang Hai-Bao; Chen Qiang

doi:10.7498/aps.70.20202233

Abstract

Plasma technology plays an important role in preparing and processing materials nowadays. This review focuses on the applications of non-thermal plasma (NTP) in the surface treatment and functionalization of materials, including the plasma sources for generating plasmas, NTP techniques and specific application fields. The plasma sources include inductively coupled plasma, capacitively coupled plasma, electron cyclotron resonance plasma, surface wave plasma, helicon wave plasma, atmospheric pressure plasma jet, and dielectric barrier discharge plasma. The NTP techniques for material surface treatment and functionalization include plasma surface grafting and polymerization, plasma enhanced chemical vapor deposition, plasma assisted atomic layer deposition, plasma enhanced reactive ion etching, and plasma assisted atomic layer etching. Specific applications of plasma surface treatment and functionalization cover hydrophilic/hydrophobic surface modification, surface micro-nano processing, biological tissue surface treatment, and catalyst surfaces treatment. Finally, the application prospects and development trends of NTP technology for material surface treatment and functionalization are proposed.

Keywords:

Authors and contacts

Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600, China

Corresponding author: Chen Qiang, chenqiang@bigc.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11505013, 11875090), the Natural Science Foundation of Beijing, China (Grant No. 1192008), the Outstanding Talent Youth Top-notch Project of Beijing Municipal Party Committee Organization Department, China (Grant No. 2016000026833ZK12), and the Science and Technology Project of Beijing Municipal Education Commission, China (Grant No. KM202010015003)

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References

[1]	Zhang H B, Sang L J, Wang Z D, Liu Z W, Yang L Z, Chen Q 2018 Plasma Sci. Technol. 20 063001 Google Scholar
[2]	Langmuir I 1928 Proc. Natl Acad. Sci. 14 627 Google Scholar
[3]	Desmet T, Morent R, De Geyter N, Leys C, Schacht E, Dubruel P 2009 Biomacromolecules 10 2351 Google Scholar
[4]	Li Y P, Zhang Z C, Shi W, Lei M K 2014 Surf. Coat. Technol. 259 77 Google Scholar
[5]	Kim H, Jung S J, Han Y H, Lee H Y, Kim J N, Jang D S, Lee J J 2008 Thin Solid Films 516 3530 Google Scholar
[6]	Han D C, Choi Y C, Shin H J, Kwak G, Ahn K S, Kim J H, Lee D K 2011 Mol. Cryst. Liq. Cryst. 539 210 Google Scholar
[7]	Kim M C, Masuoka T 2009 Appl. Surf. Sci. 255 4684 Google Scholar
[8]	Juarez-Moreno J A, Chacon-Argaez U, Barron-Zambrano J, Carrera-Figueiras C, Quintana-Owen P, Talavera-Pech W, Perez-Padilla Y, Avila-Ortega A 2018 Plasma Sci. Technol. 20 065506 Google Scholar
[9]	Yang L, Wang Z D, Zhang S Y, Yang L Z, Chen Q 2009 Chin. Phys. B 18 5401 Google Scholar
[10]	Liston E M, Martinu L, Wertheimer M R 1993 J. Adhes. Sci. Technol. 7 1091 Google Scholar
[11]	赵化侨 1993 等离子体化学与工艺 (合肥: 中国科学技术大学出版社) 第186页 Zhao H Q 1993 Plasma Chemistry and Technology (Hefei: China Science and Technology Press) p186 (in Chinese)
[12]	Samukawa S, Furuoya S 1993 Appl. Phys. Lett. 63 2044 Google Scholar
[13]	Anton R, Wiegner T, Naumann W, Liebmann M, Klein C, Bradley C 2000 Rev. Sci. Instrum. 71 1177 Google Scholar
[14]	Guruvenket S, Rao G M, Komath M, Raichur A M 2004 Appl. Surf. Sci. 236 278 Google Scholar
[15]	Guruvenket S, Komath M, Vijayalakshmi S P, Raichur A M, Rao G M 2003 J. Appl. Polym. Sci. 90 1618 Google Scholar
[16]	Conrads H, Schmidt M 2000 Plasma Sources Sci. Technol. 9 441 Google Scholar
[17]	Shenton M, Lovell-Hoare M, Stevens G C 2001 J. Phys. D: Appl. Phys. 34 2754 Google Scholar
[18]	Takagi S, Yamazaki O, Yamauchi K, Shinmura T 2013 Jpn. J. Appl. Phys. 52 086502 Google Scholar
[19]	蓝朝晖, 胡希伟, 江中和, 刘明海 2010 59 4093 Google Scholar Lan C H, Hu X W, Jiang Z H, Liu M H 2010 Acta Phys. Sin. 59 4093 Google Scholar
[20]	Bogdanov T, Tsonev I, Marinova P, Benova E, Rusanov K, Rusanova M, Atanassov I, Kozakova Z, Krcma F 2018 Appl. Sci. 8 1870 Google Scholar
[21]	Sasai K, Suzuki H, Toyoda H 2016 Jpn. J. Appl. Phys. 55 016203 Google Scholar
[22]	Boswell R W 1970 Phys. Lett. A 33 457 Google Scholar
[23]	Tynan G R, Bailey III A D, Campbell G A, Charatan R, de Chambrier A, Gibson G, Hemker D J, Jones K, Kuthi A, Lee C, Shoji T, Wilcoxson M 1997 J. Vac. Sci. Technol. A 15 2885 Google Scholar
[24]	Chen F F, Evans J D, Tynan G R 2001 Plasma Sources Sci. Technol. 10 236 Google Scholar
[25]	Chen F F, Torreblanca H 2007 Plasma Phys. Controlled Fusion 49 A81 Google Scholar
[26]	Chen F F 2008 IEEE Trans. Plasma Sci. 36 2095 Google Scholar
[27]	Chen F F, Torreblanca H 2009 Phys. Plasmas 16 057102 Google Scholar
[28]	Zhang G L, Huang T Y, Jin C G, Wu X M, Zhuge L J, Ji H T 2018 Plasma Sci. Technol. 20 085603 Google Scholar
[29]	Huang T Y, Jin C G, Yu Y W, Hu J S, Yang J H, Ding F, Chen X H, Ji P Y, Qian J W, Huang J J, Yu B, Wu X M 2020 IEEE Trans. Plasma Sci. 48 2878 Google Scholar
[30]	Akishev Y, Goossens O, Callebaut T, Leys C, Napartovich A, Trushkin N 2001 J. Phys. D: Appl. Phys. 34 2875 Google Scholar
[31]	Moon S Y, Choe W, Kang B K 2004 Appl. Phys. Lett. 84 188 Google Scholar
[32]	Moon S Y, Choe W, Uhm H S, Hwang Y S, Choi J J 2002 Phys. Plasmas 9 4045 Google Scholar
[33]	梅丹华, 方志, 邵涛 2020 中国电机工程学报 40 1339 Google Scholar Mei D, Fang Z, Shao T 2020 Proc. CSEE 40 1339 Google Scholar
[34]	Massines F, Gherardi N, Naudé N, Ségur P 2005 Plasma Phys. Controlled Fusion 47 B577 Google Scholar
[35]	Lu X, Keidar M, Laroussi M, Choi E, Szili E J, Ostrikov K 2019 Mater. Sci. Eng., R. 138 36 Google Scholar
[36]	吴淑群, 聂兰兰, 卢新培 2015 高电压技术 41 2602 Google Scholar Wu S Q, Nie L L, Lu X P 2015 High Volt. Eng. 41 2602 Google Scholar
[37]	Kong F, Zhang P H, Yu W X, Zhang C, Liu J B, Ren C Y, Shao T 2020 Appl. Surf. Sci. 527 146826 Google Scholar
[38]	胡多, 任成燕, 章程, 邱锦涛, 孔飞, 邵涛, 严萍 2019 中国电机工程学报 39 4633 Google Scholar Hu D, Ren C Y, Zhang C, Qiu J T, Kong F, Shao T, Yan P 2019 Proc. CSEE 39 4633 Google Scholar
[39]	王新新 2009 高电压技术 34 1 Google Scholar Wang X X 2009 High Volt. Eng. 34 1 Google Scholar
[40]	Fridman A, Chirokov A, Gutsol A 2005 J. Phys. D: Appl. Phys. 38 R1 Google Scholar
[41]	Foest R, Schmidt M, Becker K 2006 Int. J. Mass Spectrom. 248 87 Google Scholar
[42]	牛铮, 邵涛, 章程, 于洋, 姜慧, 严萍 2011 高电压技术 37 1536 Google Scholar Niu Z, Shao T, Zhang C, Yu Y, Jiang H, Yan P 2011 High Volt. Eng. 37 1536 Google Scholar
[43]	Kim D Y, Kim S J, Joh H M, Chung T H 2018 Phys. Plasmas 25 073505 Google Scholar
[44]	Zhang H B, Li H, Fang M, Wang Z D, Sang L J, Yang L Z, Chen Q 2016 Appl. Surf. Sci. 388 539 Google Scholar
[45]	力伯曼 M A, 里登伯格 A J 著 (蒲以康译) 2007 等离子体放电原理与材料处理 (北京: 科学出版社) 第12−18页 Lieberman M A, Lichtenberg A J (translated by Pu Y K) 2007 Principles of Plasma Discharges and Materials Processing (Beijing: Science Press) pp12−18 (in Chinese)
[46]	戴忠玲, 毛明, 王友年 2006 物理 35 693 Google Scholar Dai Z L, Mao M, Wang Y N 2006 Physics 35 693 Google Scholar
[47]	Weng Y, Kushne M J 1992 J. Appl. Phys. 72 33 Google Scholar
[48]	Moisan M, Zakrzewski Z 1991 J. Phys. D: Appl. Phys. 24 1025 Google Scholar
[49]	Boivin R F, Kline J L, Scime E E 2001 Phys. Plasmas 8 5303 Google Scholar
[50]	Wolf R, Sparavigna A C 2010 Engineering 02 397 Google Scholar
[51]	Hansen R H, Schonhorn H 1966 J. Polym. Sci. C 4 203 Google Scholar
[52]	Wang R X, Zhang C, Liu X, Xie Q, Yan P, Shao T 2015 Appl. Surf. Sci. 328 509 Google Scholar
[53]	Mirabedini S M, Arabi H, Salem A, Asiaban S 2007 Prog. Org. Coat. 60 105 Google Scholar
[54]	Tatoulian M, Arefi-Khonsari F, Borra J P 2007 Plasma Processes Polym. 4 360 Google Scholar
[55]	Olivier A, Meyer F, Raquez J M, Damman P, Dubois P 2012 Prog. Polym. Sci. 37 157 Google Scholar
[56]	Sheridan R J, Orski S V, Muramoto S, Stafford C M, Beers K L 2016 Langmuir 32 8071 Google Scholar
[57]	Pandiyaraj K N, Ram Kumar M C, Arun Kumar A, Padmanabhan P V A, Deshmukh R R, Bah M, Ismat S S, Su P G, Halleluyah M, Halim A S 2016 Appl. Surf. Sci. 370 545 Google Scholar
[58]	Wang C, Chen J R 2007 Appl. Surf. Sci. 253 4599 Google Scholar
[59]	Wang C, Chen J R, Li R 2008 Appl. Surf. Sci. 254 2882 Google Scholar
[60]	Vasilets V N, Hermel G, Konig U, Werner C, Muller M, Simon F, Grundke K, Ikada Y, Jacobasch H J 1997 Biomaterials 18 1139 Google Scholar
[61]	Wu T, Efimenko K, Genzer J 2002 J. Am. Chem. Soc. 124 9394 Google Scholar
[62]	Xue Y H, Quan W, Liu X L, Han C, Li H, Liu H 2017 Macromolecules 50 6482 Google Scholar
[63]	Kuzuya M, Yamashiro T, Kondo S I, Tsuiki M 1997 Plasmas Polym. 2 113 Google Scholar
[64]	Sasai Y, Oikawa M, Kondo S-i, Kuzuya M 2007 J. Photopolym. Sci. Technol. 20 197 Google Scholar
[65]	Sasai Y, Kondo S I, Yamauchi Y, Kuzuya M 2006 J. Photopolym. Sci. Technol. 19 265 Google Scholar
[66]	Kuzuya M, Sawa T, Mouri M, Kondo S I, Takai O 2003 Surf. Coat. Technol. 169-170 587 Google Scholar
[67]	Kuzuya M, Sawa T, Yamashiro T, Kondo S I, Takai O 2001 J. Photopolym. Sci. Technol. 14 87 Google Scholar
[68]	Biederman H 1987 Vacuum 37 367 Google Scholar
[69]	Goodman I, Nesbitt B F 1960 Polymer 1 384 Google Scholar
[70]	Goodman J 1960 J. Polym. Sci. Part A: Polym. Chem. 44 551 Google Scholar
[71]	Pandiyaraj K N, Ferraria A M, do Rego A M B, Deshmukh R R, Su P G, Halleluyah M, Halim A S 2015 Appl. Surf. Sci. 328 1 Google Scholar
[72]	Friedrich J 2011 Plasma Processes Polym. 8 783 Google Scholar
[73]	Ligot S, Bousser E, Cossement D, Klemberg-Sapieha J, Viville P, Dubois P, Snyders R 2015 Plasma Processes Polym. 12 508 Google Scholar
[74]	Xu L, Guo Y, Liu L, Bai G, Shi J, Zhang L, Chang X, Zhang R, Zhang J, Yu J 2020 Prog. Org. Coat. 146 105727 Google Scholar
[75]	Bélard L, Poncin-Epaillard F, Dole P, Avérous L 2013 Eur. Polym. J. 49 882 Google Scholar
[76]	Tkavc T, Petrinič I, Luxbacher T, Vesel A, Ristić T, Zemljič L F 2014 Int. J. Adhes. Adhes. 48 168 Google Scholar
[77]	Han D C, Choi Y C, Shin H J, Son S, Kim J H, Sohn S H, Lee D K 2010 Mol. Cryst. Liq. Cryst. 532 148 Google Scholar
[78]	Dayss E, Leps G, Meinhardt J 1999 Surf. Coat. Technol. 116-119 986 Google Scholar
[79]	Fang Z, Liu Y, Liu K, Shao T, Zhang C 2012 Vacuum 86 1305 Google Scholar
[80]	Polonskyi O, Kylian O, Petr M, Choukourov A, Hanus J, Biederman H 2013 Thin Solid Films 540 65 Google Scholar
[81]	Wang H, Yang L Z, Chen Q 2014 Plasma Sci. Technol. 16 37 Google Scholar
[82]	Park M, Oh S, Kim H, Jung D, Choi D, Park J S 2013 Thin Solid Films 546 153 Google Scholar
[83]	Starostin S A, Creatore M, Bouwstra J B, van de Sanden M C M, de Vries H W 2015 Plasma Processes Polym. 12 545 Google Scholar
[84]	Scopece P, Viaro A, Sulcis R, Kulyk I, Patelli A, Guglielmi M 2009 Plasma Processes Polym. 6 S705 Google Scholar
[85]	Durocher-Jean A, Durán I R, Asadollahi S, Laroche G, Stafford L 2020 Plasma Processes Polym. 17 1900229 Google Scholar
[86]	Fei F, Chen Q, Liu Z, Liu F, Solodovnyk A 2012 Plasma Chem. Plasma Process. 32 755 Google Scholar
[87]	Fei F, Wang Z, Chen Q, Liu Z, Sang L 2013 Surf. Coat. Technol. 228 S61 Google Scholar
[88]	Seman M T, Richards D N, Rowlette P C, Kubala N G, Wolden C A 2008 J. Vac. Sci. Technol. A 26 1213 Google Scholar
[89]	Ozeki K, Nagashima I, Ohgoe Y, Hirakuri K K, Mukaibayashi H, Masuzawa T 2009 Appl. Surf. Sci. 255 7286 Google Scholar
[90]	Abbas G A, Roy S S, Papakonstantinou P, McLaughlin J A 2005 Carbon 43 303 Google Scholar
[91]	George S M 2010 Chem. Rev. 110 111 Google Scholar
[92]	Guo Z, Li H, Chen Q, Sang L J, Yang L Z, Liu Z W, Wang X W 2015 Chem. Mater. 27 5988 Google Scholar
[93]	Meng X B, Wang X W, Geng D S, Ozgit-Akgun C, Schneider N, Elam J W 2017 Mater. Horiz. 4 133 Google Scholar
[94]	Lee J G, Kim H G, Kim S S 2013 Thin Solid Films 534 515 Google Scholar
[95]	Langereis E, Creatore M, Heil S B S, van de Sanden M C M, Kessels W M M 2006 Appl. Phys. Lett. 89 081915 Google Scholar
[96]	Kim L H, Kim K, Park S, Jeong Y J, Kim H, Chung D S, Kim S H, Park C E 2014 ACS Appl. Mater. Interfaces 6 6731 Google Scholar
[97]	Donnelly V M, Kornblit A 2013 J. Vac. Sci. Technol. A 31 050825 Google Scholar
[98]	Paetzelt H, Böhm G, Arnold T 2015 Plasma Sources Sci. Technol. 24 025002 Google Scholar
[99]	Osipov A A, Iankevich G A, Speshilova A B, Osipov A A, Endiiarova E V, Berezenko V I, Tyurikova I A, Tyurikov K S, Alexandrov S E 2020 Sci. Rep. 10 19977 Google Scholar
[100]	Petit-Etienne C, Darnon M, Vallier L, Pargon E, Cunge G, Fouchier M, Bodart P, Haass M, Brihoum M, Joubert O, Banna S, Lill T 2011 J. Vac. Sci. Technol. B 29 051202 Google Scholar
[101]	Harrison S E, Voss L F, Torres A M, Frye C D, Shao Q H, Nikolic R J 2017 J. Vac. Sci. Technol. A 35 061303 Google Scholar
[102]	罗童, 陈强 2019 真空与低温 25 19 Google Scholar Luo T, Chen Q 2019 Vac. Cryog. 25 19 Google Scholar
[103]	Kanarik K J, Lill T, Hudson E A, Sriraman S, Tan S, Marks J, Vahedi V, Gottscho R A 2015 J. Vac. Sci. Technol. A 33 020802 Google Scholar
[104]	Athavale S D, Economou D J 1995 J. Vac. Sci. Technol. A 13 966 Google Scholar
[105]	Metzler D, Bruce R L, Engelmann S, Joseph E A, Oehrlein G S 2014 J. Vac. Sci. Technol. A 32 020603 Google Scholar
[106]	Honda M, Katsunuma T, Tabata M, Tsuji A, Oishi T, Hisamatsu T, Ogawa S, Kihara Y 2017 J. Phys. D: Appl. Phys. 50 234002 Google Scholar
[107]	Ohba T, Yang W B, Tan S, Kanarik K J, Nojiri K 2017 Jpn. J. Appl. Phys. 56 06HB06 Google Scholar
[108]	Kauppinen C, Khan S A, Sundqvist J, Suyatin D B, Suihkonen S, Kauppinen E I, Sopanen M 2017 J. Vac. Sci. Technol. A 35 060603 Google Scholar
[109]	Benjamin N M P, Chapman B N, Boswell R W 1991 Proc. SPIE 1392 95 Google Scholar
[110]	Mameli A, Verheijen M A, Mackus A J M, Kessels W M M, Roozeboom F 2018 ACS Appl. Mater. Interfaces 10 38588 Google Scholar
[111]	Antoun G, Lefaucheux P, Tillocher T, Dussart R, Yamazaki K, Yatsuda K, Faguet J, Maekawa K 2019 Appl. Phys. Lett. 115 153109 Google Scholar
[112]	Bodas D S, Khan-Malek C 2007 Sens. Actuators, B 120 719 Google Scholar
[113]	Godeau G, Amigoni S, Darmanin T, Guittard F 2016 Appl. Surf. Sci. 387 28 Google Scholar
[114]	Son J, Lee J Y, Han N, Cha J, Choi J, Kwon J, Nam S, Yoo K H, Lee G H, Hong J 2020 Nano Lett. 20 5625 Google Scholar
[115]	Peng Q, Qu L, Dai L, Park K, Vaia R A 2008 ACS Nano 2 1833 Google Scholar
[116]	Graff G L, Williford R E, Burrows P E 2004 J. Appl. Phys. 96 1840 Google Scholar
[117]	Majee S, Cerqueira M F, Tondelier D, Geffroy B, Bonnassieux Y, Alpuim P, Bourée J E 2015 Prog. Org. Coat. 80 27 Google Scholar
[118]	Tashiro H, Nakaya M, Hotta A 2013 Diamond Relat. Mater. 35 7 Google Scholar
[119]	Hwang K H, Seo S W, Jung E, Chae H, Cho S 2014 Korean J. Chem. Eng. 31 528 Google Scholar
[120]	Lim S H, Seo S W, Lee H, Chae H, Cho S M 2016 Korean J. Chem. Eng. 33 1971 Google Scholar
[121]	Popelka A, Abdulkareem A, Mahmoud A A, Nassr M G, Al-Ruweidi M K A A, Mohamoud K J, Hussein M K, Lehocky M, Vesela D, Humpolicek P, Kasak P 2020 Surf. Coat. Technol. 400 126216 Google Scholar
[122]	周鑫才, 梁徳凤, 陈伟建, 张文浩, 曹颖光, 卢新培 2018 临床口腔医学杂志 34 341 Google Scholar Zhou X C, Liang D F, Chen W J, Zhang W H, Cao Y G, Lu X P 2018 J. Clin. Stomatol. 34 341 Google Scholar
[123]	Chang Y C, Lee W F, Feng S W, Huang H M, Lin C T, Teng N C, Chang W J 2016 PLoS One 11 e0146219 Google Scholar
[124]	Yamamoto H, Shibata Y, Miyazaki T 2005 J. Dent. Res. 84 668 Google Scholar
[125]	Pan Y H, Lin J C Y, Chen M K, Salamanca E, Choy C S, Tsai P Y, Leu S J, Yang K C, Huang H M, Yao W L, Chang W J 2020 Materials 13 3771 Google Scholar
[126]	谢超, 周波, 周灵, 吴雨洁, 王双印 2020 化学进展 32 1172 Google Scholar Xie C, Zhou B, Zhou L, Wu Y J, Wang S Y 2020 Prog. Chem. 32 1172 Google Scholar
[127]	Xu L, Jiang Q, Xiao Z, Li X, Huo J, Wang S Y, Dai L 2016 Angew. Chem. Int. Ed. 55 5277 Google Scholar
[128]	Yan D F, Chen R, Xiao Z H, Wang S Y 2019 Electrochim. Acta 303 316 Google Scholar
[129]	Guo Y, Gao X, Zhang C, Wu Y, Chang X, Wang T, Zheng X, Du A, Wang B, Zheng J, Ostrikov K, Li X G 2019 J. Mater. Chem. A 7 8129 Google Scholar

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图 1 非热等离子体材料表面处理及功能化过程中的等离子体源、等离子体工艺以及具体应用

Figure 1. Non-thermal plasma for material surface treatment and functionalization: Plasma sources, plasma techniques and specific applications.

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图 2 DBD等离子体设备示意图　(a)—(c)平板型放电电极结构; (d), (e)填充床型放电电极结构^[1]

Figure 2. Schematical configurations of several DBD: (a)–(c) DBD with planar type discharge electrode structure; (d), (e) DBD with packed bed type discharge electrode structure^[1].

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图 3 等离子体表面接枝处理两种工艺模式—“接枝自”模式和“接枝到”模式^[1]

Figure 3. Two kinds of different strategies of plasma grafting for modification: “plasma grafting from” and “plasma grafting onto”^[1].

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图 4 ALE过程示意图　(a) ALE工艺; (b) Si ALE工艺; (c) SiO₂ ALD工艺. ALE工艺与ALD工艺类似, 区别在于反应B中发生钝化层的移除而不是吸附^[103]

Figure 4. Schematic of ALE (a) generic concept, (b) for the Si case study, and (c) in comparison to SiO₂ ALD. ALE is similar to ALD except that removal takes place instead of adsorption in reaction B^[103].

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图 5 H₂等离子体表面处理石墨烯　(a)处理700 s时石墨烯的水接触角从原始样品的93°下降至16°; (b)改性石墨烯表面亲水性区域对癌细胞的吸附定位^[114]

Figure 5. Modification of graphene by H₂ plasma: (a) Control of the graphene wettability via hydrogenation. The as-grown graphene is hydrophobic, with a large wetting angle of 93°. As hydrogenation proceeds, leading to a very small wetting angle of 16° at 700 s. (b) Optical microscopic image of cancer cells positioned on the hydrophilic surface of patterned graphene^[114].

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表 1 几种非热等离子体源放电参数

Table 1. Discharge parameters of several NTP sources.

NTP源	频率/MHz	气压/Pa	电子温度/eV	电子密度/cm^–3	磁场强度/G	参考文献
CCP	0.05—13.56	1—10²	1—5	10⁹—10¹¹	0	蒲以康等^[45]
ICP	1—100 (常用13.56)	10^–1—1	1—10	10¹¹—10¹²	0	戴忠玲等^[46]
ECR	300—2450 (常用2450, 915)	10^–2—10^–1	2—20	10¹¹—10¹³	0—1000 (与频率有关)	Weng等^[47]
SWP	1—10000 (常用2450)	10^–1—10²	1—10	10¹¹—10¹²	0	Moisan等^[48]
HWP	1—50 (常用13.56)	10^–2—10	2—20	10¹¹—10¹⁴	100—2000	Boivin等^[49]
APPJ	0—10000	10⁵	1—5	10¹¹—10¹⁴	0	吴淑群等^[36]
DBD	0.05—10	10⁵	1—10	10¹⁴—10¹⁵	0	Wang等^[39]

DownLoad: CSV

表 2 非热等离子体聚合物基材表面接枝和聚合

Table 2. Polymer substrate surface grafting and polymerization by NTP.

NTP源	改性气氛	改性基材	主要结论	参考文献
RF-CCP (13.56 MHz)	Ar	棉、麻织物	超疏水性(↑)、穿着舒适度(↑)	Xu等^[74]
RF-CCP (13.56 MHz, 20 W)	C₂H₂	聚乳酸、聚已酸内酯	涂层附着性(↑)、氧气阻隔性(↑)	Bélard等^[75]
RF-ICP (27.12 MHz, 200 W)	O₂, CO₂	PET	亲水性(↑)、含氧基团数量(↑)	Tkavc等^[76]
RF-ICP (13.56 MHz, 400 W)	O₂	PET	表面粗糙度(↑)、水接触角(↓)、含氧基团数量(↑)	Han等^[77]
MW-ECR (2.45 GHz, 300 W)	Ar, AAc	PP	表面张力(↑)、Cu涂层附着性(↑)	Dayss等^[78]
MW-SWP (2.45 GHz, 250 W)	CO₂	聚四氟乙烯(PTFE)	水接触角(↓)、含氧基团数量(↑)	Vasilets等^[60]
MW-SWP (2.45 GHz, 1600 W)	Ar	氟基三聚物(THV)	含氧基团数量(↑)	Sasai等^[21]
APPJ (50 kHz, 0—20 kV)	TEOS/O₂/Ar	聚全氟乙丙烯(FEP)	含硅基团数量(↑)、沿面闪络电压(↑)	胡多等^[38]
DBD (1 kHz, 25 kV)	空气	PET	表面粗糙度(↑)、水接触角(↓)、含氧基团数量(↑)	Fang等^[79]
DBD (RTR, 40 kHz)	AAc, C₂H₆O, C₃H₇N	PE	水接触角(↓)、Al 涂层附着性(↑)	Zhang等^[44]

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表 3 非热等离子体沉积无机功能涂层

Table 3. Inorganic functional coatings deposited by NTP.

无机薄膜	NTP源	工作气氛	衬底	主要结论	参考文献
SiO_x	PECVD (DBD, 200 kHz, 3 kV)	TEOS/O₂/N₂	PEN	附着性能(↑)、阻隔性能(↑)	Starostin等^[83]
SiO_x	PECVD (CPP, 40 kHz, 50 W)	HMDSO/O₂	PVC	抗迁移性能(↑)	Fei等^[86,87]
AlO_x	PECVD (1 Hz, 30 W)	TMA/O₂	硅片	沉积速率(↑)、薄膜纯度(↑)	Seman等^[88]
DLC	PECVD (RF, 13.56 MHz, 250 W)	CH₄	PTFE	薄膜质量(↑)、阻隔性能(↑)	Ozeki等^[89]
a-C:H	PECVD (RF, 13.56 MHz)	C₂H₂/Ar	PC, PET	薄膜硬度(↓)、阻隔性能(↑)	Abbas等^[90]
a-C:H	PECVD (RF, 13.56 MHz, 0-90 W)	n-C₆H₁₄/Ar	PET, 硅片	致密性(↑)、阻隔性能(↑)	Polonsky等^[80]
SiO_xC_yH_z	PECVD (APPJ, 20 kHz, 350 V)	空气/HMDSO	PP	阻隔性能(↑)	Scopece等^[84]
SiO_xC_yH	PECVD (MW-APPJ, 2.45 GHz, 2000 W)	Ar/HMDSO	玻璃	抗雾性能(↑)	Durocher-Jean等^[85]
Al_xO_y	PAALD (CCP, 60 Hz, 500 W)	TMA/O₂	PEN	WVTR: 8.85 × 10^–4 g·m^–2·d^–1	Lee等^[94]
Al₂O₃	PAALD (RF-ICP)	TMA/O₂	PEN	WVTR: 5.0 × 10^–3 g·m^–2·d^–1	Langereis等^[95]
Al₂O₃/TiO₂	PAALD (APPJ, 20 kHz, 350 V)	TMA/TDMAT	OTFT	防腐性能(↑)、阻隔性能(↑)	Kim等^[96]

DownLoad: CSV

表 4 非热等离子体辅助材料表面刻蚀

Table 4. Material surface etching assisted by NTP.

衬底	NTP源	刻蚀气体	主要结果	参考文献
Si	PERIE (RF-APPJ, 13.56 MHz)	He/N₂/CF₄	刻蚀速率: 0.068 mm³·min^–1; R_RMS: 0.2—2.44 nm	Paetzelt等^[98]
SiC	PERIE (RF-ICP, 6.78 MHz, 1000 W)	SF₆/O₂	刻蚀速率: 1.28 µm·min^–1; R_RMS: 0.7 nm	Osipov等^[99]
SiO₂	PERIE (RF-ICP, 13.56 MHz, 500 W)	Cl₂	刻蚀速率: 2.2 nm·min^-1	Petit-Etienne等^[100]
GaN	PERIE (MW-ECR, 2.45 GHz, 850 W)	Cl₂	刻蚀速率: 0.28 μm·min^–1; 刻蚀选择性: 39∶1	Harrison等^[101]
HfO₂	PERIE (MW-ECR, 2.45 GHz, 600 W)	CF₄/Ar/O₂	刻蚀速率: 0.36 nm·min^–1; R_RMS: 0.17 nm	罗童等^[102]
SiO₂	PAALE (RF-ICP, 13.56 MHz)	Ar/C₄F₈	刻蚀速率: 0.2—0.3 Å·s^–1	Metzler等^[105]
GaN	PAALE (RF-ICP)	Cl₂/Ar	EPC: 0.4 nm·cycle^–1; R_RMS: 0.6 nm	Ohba等^[107]
GaN	PAALE (RF-ICP, 50 W)	Cl₂/Ar	刻蚀速率: 2.87 Å·cycle^–1	Kauppinen等^[108]
ZnO	PAALE (RF-ICP, 13.56 MHz, 200 W)	Hacac/O₂	EPC: 0.5—1.3 Å·cycle^–1; 刻蚀选择性: 80∶1	Mameli等^[110]
SiO₂	PAALE (RF-ICP, 13.56 MHz)	Ar/C₄F₈	EPC: 0.4 nm·cycle^–1; R_RMS: 1.2 nm	Antoun等^[111]

DownLoad: CSV

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[1]	Zhang H B, Sang L J, Wang Z D, Liu Z W, Yang L Z, Chen Q 2018 Plasma Sci. Technol. 20 063001 Google Scholar
[2]	Langmuir I 1928 Proc. Natl Acad. Sci. 14 627 Google Scholar
[3]	Desmet T, Morent R, De Geyter N, Leys C, Schacht E, Dubruel P 2009 Biomacromolecules 10 2351 Google Scholar
[4]	Li Y P, Zhang Z C, Shi W, Lei M K 2014 Surf. Coat. Technol. 259 77 Google Scholar
[5]	Kim H, Jung S J, Han Y H, Lee H Y, Kim J N, Jang D S, Lee J J 2008 Thin Solid Films 516 3530 Google Scholar
[6]	Han D C, Choi Y C, Shin H J, Kwak G, Ahn K S, Kim J H, Lee D K 2011 Mol. Cryst. Liq. Cryst. 539 210 Google Scholar
[7]	Kim M C, Masuoka T 2009 Appl. Surf. Sci. 255 4684 Google Scholar
[8]	Juarez-Moreno J A, Chacon-Argaez U, Barron-Zambrano J, Carrera-Figueiras C, Quintana-Owen P, Talavera-Pech W, Perez-Padilla Y, Avila-Ortega A 2018 Plasma Sci. Technol. 20 065506 Google Scholar
[9]	Yang L, Wang Z D, Zhang S Y, Yang L Z, Chen Q 2009 Chin. Phys. B 18 5401 Google Scholar
[10]	Liston E M, Martinu L, Wertheimer M R 1993 J. Adhes. Sci. Technol. 7 1091 Google Scholar
[11]	赵化侨 1993 等离子体化学与工艺 (合肥: 中国科学技术大学出版社) 第186页 Zhao H Q 1993 Plasma Chemistry and Technology (Hefei: China Science and Technology Press) p186 (in Chinese)
[12]	Samukawa S, Furuoya S 1993 Appl. Phys. Lett. 63 2044 Google Scholar
[13]	Anton R, Wiegner T, Naumann W, Liebmann M, Klein C, Bradley C 2000 Rev. Sci. Instrum. 71 1177 Google Scholar
[14]	Guruvenket S, Rao G M, Komath M, Raichur A M 2004 Appl. Surf. Sci. 236 278 Google Scholar
[15]	Guruvenket S, Komath M, Vijayalakshmi S P, Raichur A M, Rao G M 2003 J. Appl. Polym. Sci. 90 1618 Google Scholar
[16]	Conrads H, Schmidt M 2000 Plasma Sources Sci. Technol. 9 441 Google Scholar
[17]	Shenton M, Lovell-Hoare M, Stevens G C 2001 J. Phys. D: Appl. Phys. 34 2754 Google Scholar
[18]	Takagi S, Yamazaki O, Yamauchi K, Shinmura T 2013 Jpn. J. Appl. Phys. 52 086502 Google Scholar
[19]	蓝朝晖, 胡希伟, 江中和, 刘明海 2010 59 4093 Google Scholar Lan C H, Hu X W, Jiang Z H, Liu M H 2010 Acta Phys. Sin. 59 4093 Google Scholar
[20]	Bogdanov T, Tsonev I, Marinova P, Benova E, Rusanov K, Rusanova M, Atanassov I, Kozakova Z, Krcma F 2018 Appl. Sci. 8 1870 Google Scholar
[21]	Sasai K, Suzuki H, Toyoda H 2016 Jpn. J. Appl. Phys. 55 016203 Google Scholar
[22]	Boswell R W 1970 Phys. Lett. A 33 457 Google Scholar
[23]	Tynan G R, Bailey III A D, Campbell G A, Charatan R, de Chambrier A, Gibson G, Hemker D J, Jones K, Kuthi A, Lee C, Shoji T, Wilcoxson M 1997 J. Vac. Sci. Technol. A 15 2885 Google Scholar
[24]	Chen F F, Evans J D, Tynan G R 2001 Plasma Sources Sci. Technol. 10 236 Google Scholar
[25]	Chen F F, Torreblanca H 2007 Plasma Phys. Controlled Fusion 49 A81 Google Scholar
[26]	Chen F F 2008 IEEE Trans. Plasma Sci. 36 2095 Google Scholar
[27]	Chen F F, Torreblanca H 2009 Phys. Plasmas 16 057102 Google Scholar
[28]	Zhang G L, Huang T Y, Jin C G, Wu X M, Zhuge L J, Ji H T 2018 Plasma Sci. Technol. 20 085603 Google Scholar
[29]	Huang T Y, Jin C G, Yu Y W, Hu J S, Yang J H, Ding F, Chen X H, Ji P Y, Qian J W, Huang J J, Yu B, Wu X M 2020 IEEE Trans. Plasma Sci. 48 2878 Google Scholar
[30]	Akishev Y, Goossens O, Callebaut T, Leys C, Napartovich A, Trushkin N 2001 J. Phys. D: Appl. Phys. 34 2875 Google Scholar
[31]	Moon S Y, Choe W, Kang B K 2004 Appl. Phys. Lett. 84 188 Google Scholar
[32]	Moon S Y, Choe W, Uhm H S, Hwang Y S, Choi J J 2002 Phys. Plasmas 9 4045 Google Scholar
[33]	梅丹华, 方志, 邵涛 2020 中国电机工程学报 40 1339 Google Scholar Mei D, Fang Z, Shao T 2020 Proc. CSEE 40 1339 Google Scholar
[34]	Massines F, Gherardi N, Naudé N, Ségur P 2005 Plasma Phys. Controlled Fusion 47 B577 Google Scholar
[35]	Lu X, Keidar M, Laroussi M, Choi E, Szili E J, Ostrikov K 2019 Mater. Sci. Eng., R. 138 36 Google Scholar
[36]	吴淑群, 聂兰兰, 卢新培 2015 高电压技术 41 2602 Google Scholar Wu S Q, Nie L L, Lu X P 2015 High Volt. Eng. 41 2602 Google Scholar
[37]	Kong F, Zhang P H, Yu W X, Zhang C, Liu J B, Ren C Y, Shao T 2020 Appl. Surf. Sci. 527 146826 Google Scholar
[38]	胡多, 任成燕, 章程, 邱锦涛, 孔飞, 邵涛, 严萍 2019 中国电机工程学报 39 4633 Google Scholar Hu D, Ren C Y, Zhang C, Qiu J T, Kong F, Shao T, Yan P 2019 Proc. CSEE 39 4633 Google Scholar
[39]	王新新 2009 高电压技术 34 1 Google Scholar Wang X X 2009 High Volt. Eng. 34 1 Google Scholar
[40]	Fridman A, Chirokov A, Gutsol A 2005 J. Phys. D: Appl. Phys. 38 R1 Google Scholar
[41]	Foest R, Schmidt M, Becker K 2006 Int. J. Mass Spectrom. 248 87 Google Scholar
[42]	牛铮, 邵涛, 章程, 于洋, 姜慧, 严萍 2011 高电压技术 37 1536 Google Scholar Niu Z, Shao T, Zhang C, Yu Y, Jiang H, Yan P 2011 High Volt. Eng. 37 1536 Google Scholar
[43]	Kim D Y, Kim S J, Joh H M, Chung T H 2018 Phys. Plasmas 25 073505 Google Scholar
[44]	Zhang H B, Li H, Fang M, Wang Z D, Sang L J, Yang L Z, Chen Q 2016 Appl. Surf. Sci. 388 539 Google Scholar
[45]	力伯曼 M A, 里登伯格 A J 著 (蒲以康译) 2007 等离子体放电原理与材料处理 (北京: 科学出版社) 第12−18页 Lieberman M A, Lichtenberg A J (translated by Pu Y K) 2007 Principles of Plasma Discharges and Materials Processing (Beijing: Science Press) pp12−18 (in Chinese)
[46]	戴忠玲, 毛明, 王友年 2006 物理 35 693 Google Scholar Dai Z L, Mao M, Wang Y N 2006 Physics 35 693 Google Scholar
[47]	Weng Y, Kushne M J 1992 J. Appl. Phys. 72 33 Google Scholar
[48]	Moisan M, Zakrzewski Z 1991 J. Phys. D: Appl. Phys. 24 1025 Google Scholar
[49]	Boivin R F, Kline J L, Scime E E 2001 Phys. Plasmas 8 5303 Google Scholar
[50]	Wolf R, Sparavigna A C 2010 Engineering 02 397 Google Scholar
[51]	Hansen R H, Schonhorn H 1966 J. Polym. Sci. C 4 203 Google Scholar
[52]	Wang R X, Zhang C, Liu X, Xie Q, Yan P, Shao T 2015 Appl. Surf. Sci. 328 509 Google Scholar
[53]	Mirabedini S M, Arabi H, Salem A, Asiaban S 2007 Prog. Org. Coat. 60 105 Google Scholar
[54]	Tatoulian M, Arefi-Khonsari F, Borra J P 2007 Plasma Processes Polym. 4 360 Google Scholar
[55]	Olivier A, Meyer F, Raquez J M, Damman P, Dubois P 2012 Prog. Polym. Sci. 37 157 Google Scholar
[56]	Sheridan R J, Orski S V, Muramoto S, Stafford C M, Beers K L 2016 Langmuir 32 8071 Google Scholar
[57]	Pandiyaraj K N, Ram Kumar M C, Arun Kumar A, Padmanabhan P V A, Deshmukh R R, Bah M, Ismat S S, Su P G, Halleluyah M, Halim A S 2016 Appl. Surf. Sci. 370 545 Google Scholar
[58]	Wang C, Chen J R 2007 Appl. Surf. Sci. 253 4599 Google Scholar
[59]	Wang C, Chen J R, Li R 2008 Appl. Surf. Sci. 254 2882 Google Scholar
[60]	Vasilets V N, Hermel G, Konig U, Werner C, Muller M, Simon F, Grundke K, Ikada Y, Jacobasch H J 1997 Biomaterials 18 1139 Google Scholar
[61]	Wu T, Efimenko K, Genzer J 2002 J. Am. Chem. Soc. 124 9394 Google Scholar
[62]	Xue Y H, Quan W, Liu X L, Han C, Li H, Liu H 2017 Macromolecules 50 6482 Google Scholar
[63]	Kuzuya M, Yamashiro T, Kondo S I, Tsuiki M 1997 Plasmas Polym. 2 113 Google Scholar
[64]	Sasai Y, Oikawa M, Kondo S-i, Kuzuya M 2007 J. Photopolym. Sci. Technol. 20 197 Google Scholar
[65]	Sasai Y, Kondo S I, Yamauchi Y, Kuzuya M 2006 J. Photopolym. Sci. Technol. 19 265 Google Scholar
[66]	Kuzuya M, Sawa T, Mouri M, Kondo S I, Takai O 2003 Surf. Coat. Technol. 169-170 587 Google Scholar
[67]	Kuzuya M, Sawa T, Yamashiro T, Kondo S I, Takai O 2001 J. Photopolym. Sci. Technol. 14 87 Google Scholar
[68]	Biederman H 1987 Vacuum 37 367 Google Scholar
[69]	Goodman I, Nesbitt B F 1960 Polymer 1 384 Google Scholar
[70]	Goodman J 1960 J. Polym. Sci. Part A: Polym. Chem. 44 551 Google Scholar
[71]	Pandiyaraj K N, Ferraria A M, do Rego A M B, Deshmukh R R, Su P G, Halleluyah M, Halim A S 2015 Appl. Surf. Sci. 328 1 Google Scholar
[72]	Friedrich J 2011 Plasma Processes Polym. 8 783 Google Scholar
[73]	Ligot S, Bousser E, Cossement D, Klemberg-Sapieha J, Viville P, Dubois P, Snyders R 2015 Plasma Processes Polym. 12 508 Google Scholar
[74]	Xu L, Guo Y, Liu L, Bai G, Shi J, Zhang L, Chang X, Zhang R, Zhang J, Yu J 2020 Prog. Org. Coat. 146 105727 Google Scholar
[75]	Bélard L, Poncin-Epaillard F, Dole P, Avérous L 2013 Eur. Polym. J. 49 882 Google Scholar
[76]	Tkavc T, Petrinič I, Luxbacher T, Vesel A, Ristić T, Zemljič L F 2014 Int. J. Adhes. Adhes. 48 168 Google Scholar
[77]	Han D C, Choi Y C, Shin H J, Son S, Kim J H, Sohn S H, Lee D K 2010 Mol. Cryst. Liq. Cryst. 532 148 Google Scholar
[78]	Dayss E, Leps G, Meinhardt J 1999 Surf. Coat. Technol. 116-119 986 Google Scholar
[79]	Fang Z, Liu Y, Liu K, Shao T, Zhang C 2012 Vacuum 86 1305 Google Scholar
[80]	Polonskyi O, Kylian O, Petr M, Choukourov A, Hanus J, Biederman H 2013 Thin Solid Films 540 65 Google Scholar
[81]	Wang H, Yang L Z, Chen Q 2014 Plasma Sci. Technol. 16 37 Google Scholar
[82]	Park M, Oh S, Kim H, Jung D, Choi D, Park J S 2013 Thin Solid Films 546 153 Google Scholar
[83]	Starostin S A, Creatore M, Bouwstra J B, van de Sanden M C M, de Vries H W 2015 Plasma Processes Polym. 12 545 Google Scholar
[84]	Scopece P, Viaro A, Sulcis R, Kulyk I, Patelli A, Guglielmi M 2009 Plasma Processes Polym. 6 S705 Google Scholar
[85]	Durocher-Jean A, Durán I R, Asadollahi S, Laroche G, Stafford L 2020 Plasma Processes Polym. 17 1900229 Google Scholar
[86]	Fei F, Chen Q, Liu Z, Liu F, Solodovnyk A 2012 Plasma Chem. Plasma Process. 32 755 Google Scholar
[87]	Fei F, Wang Z, Chen Q, Liu Z, Sang L 2013 Surf. Coat. Technol. 228 S61 Google Scholar
[88]	Seman M T, Richards D N, Rowlette P C, Kubala N G, Wolden C A 2008 J. Vac. Sci. Technol. A 26 1213 Google Scholar
[89]	Ozeki K, Nagashima I, Ohgoe Y, Hirakuri K K, Mukaibayashi H, Masuzawa T 2009 Appl. Surf. Sci. 255 7286 Google Scholar
[90]	Abbas G A, Roy S S, Papakonstantinou P, McLaughlin J A 2005 Carbon 43 303 Google Scholar
[91]	George S M 2010 Chem. Rev. 110 111 Google Scholar
[92]	Guo Z, Li H, Chen Q, Sang L J, Yang L Z, Liu Z W, Wang X W 2015 Chem. Mater. 27 5988 Google Scholar
[93]	Meng X B, Wang X W, Geng D S, Ozgit-Akgun C, Schneider N, Elam J W 2017 Mater. Horiz. 4 133 Google Scholar
[94]	Lee J G, Kim H G, Kim S S 2013 Thin Solid Films 534 515 Google Scholar
[95]	Langereis E, Creatore M, Heil S B S, van de Sanden M C M, Kessels W M M 2006 Appl. Phys. Lett. 89 081915 Google Scholar
[96]	Kim L H, Kim K, Park S, Jeong Y J, Kim H, Chung D S, Kim S H, Park C E 2014 ACS Appl. Mater. Interfaces 6 6731 Google Scholar
[97]	Donnelly V M, Kornblit A 2013 J. Vac. Sci. Technol. A 31 050825 Google Scholar
[98]	Paetzelt H, Böhm G, Arnold T 2015 Plasma Sources Sci. Technol. 24 025002 Google Scholar
[99]	Osipov A A, Iankevich G A, Speshilova A B, Osipov A A, Endiiarova E V, Berezenko V I, Tyurikova I A, Tyurikov K S, Alexandrov S E 2020 Sci. Rep. 10 19977 Google Scholar
[100]	Petit-Etienne C, Darnon M, Vallier L, Pargon E, Cunge G, Fouchier M, Bodart P, Haass M, Brihoum M, Joubert O, Banna S, Lill T 2011 J. Vac. Sci. Technol. B 29 051202 Google Scholar
[101]	Harrison S E, Voss L F, Torres A M, Frye C D, Shao Q H, Nikolic R J 2017 J. Vac. Sci. Technol. A 35 061303 Google Scholar
[102]	罗童, 陈强 2019 真空与低温 25 19 Google Scholar Luo T, Chen Q 2019 Vac. Cryog. 25 19 Google Scholar
[103]	Kanarik K J, Lill T, Hudson E A, Sriraman S, Tan S, Marks J, Vahedi V, Gottscho R A 2015 J. Vac. Sci. Technol. A 33 020802 Google Scholar
[104]	Athavale S D, Economou D J 1995 J. Vac. Sci. Technol. A 13 966 Google Scholar
[105]	Metzler D, Bruce R L, Engelmann S, Joseph E A, Oehrlein G S 2014 J. Vac. Sci. Technol. A 32 020603 Google Scholar
[106]	Honda M, Katsunuma T, Tabata M, Tsuji A, Oishi T, Hisamatsu T, Ogawa S, Kihara Y 2017 J. Phys. D: Appl. Phys. 50 234002 Google Scholar
[107]	Ohba T, Yang W B, Tan S, Kanarik K J, Nojiri K 2017 Jpn. J. Appl. Phys. 56 06HB06 Google Scholar
[108]	Kauppinen C, Khan S A, Sundqvist J, Suyatin D B, Suihkonen S, Kauppinen E I, Sopanen M 2017 J. Vac. Sci. Technol. A 35 060603 Google Scholar
[109]	Benjamin N M P, Chapman B N, Boswell R W 1991 Proc. SPIE 1392 95 Google Scholar
[110]	Mameli A, Verheijen M A, Mackus A J M, Kessels W M M, Roozeboom F 2018 ACS Appl. Mater. Interfaces 10 38588 Google Scholar
[111]	Antoun G, Lefaucheux P, Tillocher T, Dussart R, Yamazaki K, Yatsuda K, Faguet J, Maekawa K 2019 Appl. Phys. Lett. 115 153109 Google Scholar
[112]	Bodas D S, Khan-Malek C 2007 Sens. Actuators, B 120 719 Google Scholar
[113]	Godeau G, Amigoni S, Darmanin T, Guittard F 2016 Appl. Surf. Sci. 387 28 Google Scholar
[114]	Son J, Lee J Y, Han N, Cha J, Choi J, Kwon J, Nam S, Yoo K H, Lee G H, Hong J 2020 Nano Lett. 20 5625 Google Scholar
[115]	Peng Q, Qu L, Dai L, Park K, Vaia R A 2008 ACS Nano 2 1833 Google Scholar
[116]	Graff G L, Williford R E, Burrows P E 2004 J. Appl. Phys. 96 1840 Google Scholar
[117]	Majee S, Cerqueira M F, Tondelier D, Geffroy B, Bonnassieux Y, Alpuim P, Bourée J E 2015 Prog. Org. Coat. 80 27 Google Scholar
[118]	Tashiro H, Nakaya M, Hotta A 2013 Diamond Relat. Mater. 35 7 Google Scholar
[119]	Hwang K H, Seo S W, Jung E, Chae H, Cho S 2014 Korean J. Chem. Eng. 31 528 Google Scholar
[120]	Lim S H, Seo S W, Lee H, Chae H, Cho S M 2016 Korean J. Chem. Eng. 33 1971 Google Scholar
[121]	Popelka A, Abdulkareem A, Mahmoud A A, Nassr M G, Al-Ruweidi M K A A, Mohamoud K J, Hussein M K, Lehocky M, Vesela D, Humpolicek P, Kasak P 2020 Surf. Coat. Technol. 400 126216 Google Scholar
[122]	周鑫才, 梁徳凤, 陈伟建, 张文浩, 曹颖光, 卢新培 2018 临床口腔医学杂志 34 341 Google Scholar Zhou X C, Liang D F, Chen W J, Zhang W H, Cao Y G, Lu X P 2018 J. Clin. Stomatol. 34 341 Google Scholar
[123]	Chang Y C, Lee W F, Feng S W, Huang H M, Lin C T, Teng N C, Chang W J 2016 PLoS One 11 e0146219 Google Scholar
[124]	Yamamoto H, Shibata Y, Miyazaki T 2005 J. Dent. Res. 84 668 Google Scholar
[125]	Pan Y H, Lin J C Y, Chen M K, Salamanca E, Choy C S, Tsai P Y, Leu S J, Yang K C, Huang H M, Yao W L, Chang W J 2020 Materials 13 3771 Google Scholar
[126]	谢超, 周波, 周灵, 吴雨洁, 王双印 2020 化学进展 32 1172 Google Scholar Xie C, Zhou B, Zhou L, Wu Y J, Wang S Y 2020 Prog. Chem. 32 1172 Google Scholar
[127]	Xu L, Jiang Q, Xiao Z, Li X, Huo J, Wang S Y, Dai L 2016 Angew. Chem. Int. Ed. 55 5277 Google Scholar
[128]	Yan D F, Chen R, Xiao Z H, Wang S Y 2019 Electrochim. Acta 303 316 Google Scholar
[129]	Guo Y, Gao X, Zhang C, Wu Y, Chang X, Wang T, Zheng X, Du A, Wang B, Zheng J, Ostrikov K, Li X G 2019 J. Mater. Chem. A 7 8129 Google Scholar

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Vol. 70, Issue 9 - 2021-05-05

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