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Ji Jian-Wei, Kazuya Yamamura, Deng Hui. Plasma-assisted polishing for atomic surface fabrication of single crystal SiC. Acta Physica Sinica,
2021, 70(6): 068102.
doi: 10.7498/aps.70.20202014
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Zhang Hai-Bao, Chen Qiang. Recent progress of non-thermal plasma material surface treatment and functionalization. Acta Physica Sinica,
2021, 70(9): 095203.
doi: 10.7498/aps.70.20202233
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Mao Xin-Guang, Wang Jun, Shen Jie. Upconversion luminescence properties in Er3+/Yb3+ codoped TiO2 films prepared by magnetron sputtering. Acta Physica Sinica,
2014, 63(8): 087803.
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Xu Yun, Li Yun-Peng, Jin Lu, Ma Xiang-Yang, Yang De-Ren. Low-threshold electrically pumped ultraviolet random lasing from ZnO film prepared by pulsed laser deposition. Acta Physica Sinica,
2013, 62(8): 084207.
doi: 10.7498/aps.62.084207
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Guo Zhi-Chao, Suo Hong-Li. The enhancement of current in superconductor wires by modifying and changing the surface region microstructure. Acta Physica Sinica,
2012, 61(23): 237106.
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Jia Lu, Xie Er-Qing, Pan Xiao-Jun, Zhang Zhen-Xing. Optical properties of amorphous GaN films deposited by sputtering. Acta Physica Sinica,
2009, 58(5): 3377-3382.
doi: 10.7498/aps.58.3377
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Zhu Feng, Jiao Fei, Quan Sheng-Wen, Hao Jian-Kui, Zhao Kui. Surface dry treatment of RF superconducting cavity by sputtering. Acta Physica Sinica,
2009, 58(2): 876-881.
doi: 10.7498/aps.58.876
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Peng Hai-Bo, Wang Tie-Shan, Han Yun-Cheng, Ding Da-Jie, Xu He, Cheng Rui, Zhao Yong-Tao, Wang Yu-Yu. Study of channeling effect by impact of highly charged ions on crystal surface of Si(110). Acta Physica Sinica,
2008, 57(4): 2161-2164.
doi: 10.7498/aps.57.2161
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Xie Guo-Feng. Improving parallel electrode method by sputtering atoms' angle distribution rule. Acta Physica Sinica,
2008, 57(3): 1784-1787.
doi: 10.7498/aps.57.1784
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Lü Ling, Gong Xin, Hao Yue. Properties of p-type GaN etched by inductively coupled plasma and their improvement. Acta Physica Sinica,
2008, 57(2): 1128-1132.
doi: 10.7498/aps.57.1128
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Lu Xiao, Wu Chuan-Gui, Zhang Wan-Li, Li Yan-Rong. Dielectric breakdown of BST thin films prepared by RF sputtering. Acta Physica Sinica,
2006, 55(5): 2513-2517.
doi: 10.7498/aps.55.2513
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Peng Dong-Sheng, Feng Yu-Chun, Wang Wen-Xin, Liu Xiao-Feng, Shi Wei, Niu Han-Ben. A new method to grow high quality GaN film by MOCVD. Acta Physica Sinica,
2006, 55(7): 3606-3610.
doi: 10.7498/aps.55.3606
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Zhang Chao, Wang Yong-Liang, Yan Chao, Zhang Qing-Yu. Numerical simulation of the influence of substitutional impurity on the interaction between low-energy Pt atoms and Pt(111) surface. Acta Physica Sinica,
2006, 55(6): 2882-2891.
doi: 10.7498/aps.55.2882
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Wang Chong, Feng Qian, Hao Yue, Wan Hui. Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures. Acta Physica Sinica,
2006, 55(11): 6085-6089.
doi: 10.7498/aps.55.6085
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Xie Guo-Feng, Wang De-Wu, Ying Chun-Tong. Ion extraction and collection studied by parallel electrode method on considerin g sputtering loss. Acta Physica Sinica,
2005, 54(4): 1543-1551.
doi: 10.7498/aps.54.1543
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Xie Guo-Feng, Wang De-Wu, Ying Chun-Tong. Ions extraction and collection using the RF resonance method and taking into consideration the sputtering loss. Acta Physica Sinica,
2005, 54(5): 2147-2152.
doi: 10.7498/aps.54.2147
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Meng Tie-Jun, Zhao Kui, Xie Da-Tao, Zhang Bao-Cheng, Wang Li-Fang, Zhu Feng, Chu Xiang-Qiang, Chen Jia-Er. Studies on the improvement of niobium-sputtered quarter wave resonator supercond ucting cavity. Acta Physica Sinica,
2003, 52(6): 1515-1519.
doi: 10.7498/aps.52.1515
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Zhu Hong-Lian, Wang De-Wu. . Acta Physica Sinica,
2002, 51(6): 1338-1345.
doi: 10.7498/aps.51.1338
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Zhang Chao, Lv Hai-Feng, Zhang Qing-Yu. . Acta Physica Sinica,
2002, 51(10): 2329-2334.
doi: 10.7498/aps.51.2329
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SHI YI-SHENG, ZHAO TE-XIU, LIU HONG-TU, WANG XIAO-PING. A STUDY ON ELECTRICAL RESISTIVITY OF RF SPUTTERING Pd FILMS. Acta Physica Sinica,
1990, 39(11): 1803-1810.
doi: 10.7498/aps.39.1803
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