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In this study, molecular dynamics simulations are used to investigate atom F interacting with SiC at 300 K. Simulation results show that with the saturation of the deposition of F atoms on the surface, the compositions (SiFx and CFx groups (x4 is dominant. And the main etching mechanism of Si atoms is chemical etching.
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Keywords:
- molecular dynamics /
- etching /
- energy /
- SiC
[1] Chung G S, Ohn C M 2007 Electron. Lett. 43 1116
[2] Huang Q Z, Yu J Z, Chen S W, Xu X J, Han W H, Fan Z C 2008 Chin. Phys. B 17 2562
[3] McLane G F, Flemish J R 1996 Appl. Phys. Lett. 68 3755
[4] Kim B, Kong S M, Lee B T 2002 J. Vac. Sci. Technol. A 20 146
[5] Lee H Y, Kim D W, Sung Y J, Yeom G Y 2005 Jpn. J. Appl. Phys. 44 1445
[6] Lee H Y, Kim D W, Sung Y J, Yeom G Y 2005 Thin Solid Films 475 318
[7] Leerungnawarat P, Lee K P, Pearton S J, Ren F, Chu S N G 2001 J. Electron. Mater. 30 202
[8] Cai C C, Yang Y T, Li Y J, Jia H J, Ji H L 2006 Acta Phys. Sin. 55 1351 (in Chinese) [柴常春、杨银堂、李跃进、贾护军、姬慧莲 1999 48 550]
[9] Wu J, Parsons J D, Evans D R 1995 J. Electrochem. Soc. 142 669
[10] Abrams C F, Graves D B 1999 J. Appl. Phys. 86 5938
[11] Abrams C F, Graves D B 2000 Thin Solid Films 374 150
[12] Humbird D, Graves D B 2004 J. Appl. Phys. 96 791
[13] Gou F, Liang M C, Chen Z, Qian Q 2007 Appl. Surf. Sci. 253 8743
[14] Gou F, Zen L T, Meng C L 2008 Thin Solid Films 516 1832
[15] Winters H F, Coburn J W 1992 Surf. Sci. Rep. 14 162
[16] Kota G P, Coburn J W, Graves D B 1999 J. Appl. Phys. 85 74
[17] Alder B J, Walnwright T E 1957 Chem.Phys. 27 1208
[18] Berendsen H J C, Postma J P M, Gunsteren W F, Dinola A, Haak J R 1984 Chem. Phys. 81 3684
[19] Gou F, Kleyn A W, Gleeson M A 2008 Int. Rev. Phys. Chem. 27 229
[20] Vegh J J, Humbird D, Graves D B 2005 J. Vac. Sci. Technol. A 23 1598
[21] Tu Y Y, Chuang T J, Winters H F 1981 Phys. Rev. B 23 823
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[1] Chung G S, Ohn C M 2007 Electron. Lett. 43 1116
[2] Huang Q Z, Yu J Z, Chen S W, Xu X J, Han W H, Fan Z C 2008 Chin. Phys. B 17 2562
[3] McLane G F, Flemish J R 1996 Appl. Phys. Lett. 68 3755
[4] Kim B, Kong S M, Lee B T 2002 J. Vac. Sci. Technol. A 20 146
[5] Lee H Y, Kim D W, Sung Y J, Yeom G Y 2005 Jpn. J. Appl. Phys. 44 1445
[6] Lee H Y, Kim D W, Sung Y J, Yeom G Y 2005 Thin Solid Films 475 318
[7] Leerungnawarat P, Lee K P, Pearton S J, Ren F, Chu S N G 2001 J. Electron. Mater. 30 202
[8] Cai C C, Yang Y T, Li Y J, Jia H J, Ji H L 2006 Acta Phys. Sin. 55 1351 (in Chinese) [柴常春、杨银堂、李跃进、贾护军、姬慧莲 1999 48 550]
[9] Wu J, Parsons J D, Evans D R 1995 J. Electrochem. Soc. 142 669
[10] Abrams C F, Graves D B 1999 J. Appl. Phys. 86 5938
[11] Abrams C F, Graves D B 2000 Thin Solid Films 374 150
[12] Humbird D, Graves D B 2004 J. Appl. Phys. 96 791
[13] Gou F, Liang M C, Chen Z, Qian Q 2007 Appl. Surf. Sci. 253 8743
[14] Gou F, Zen L T, Meng C L 2008 Thin Solid Films 516 1832
[15] Winters H F, Coburn J W 1992 Surf. Sci. Rep. 14 162
[16] Kota G P, Coburn J W, Graves D B 1999 J. Appl. Phys. 85 74
[17] Alder B J, Walnwright T E 1957 Chem.Phys. 27 1208
[18] Berendsen H J C, Postma J P M, Gunsteren W F, Dinola A, Haak J R 1984 Chem. Phys. 81 3684
[19] Gou F, Kleyn A W, Gleeson M A 2008 Int. Rev. Phys. Chem. 27 229
[20] Vegh J J, Humbird D, Graves D B 2005 J. Vac. Sci. Technol. A 23 1598
[21] Tu Y Y, Chuang T J, Winters H F 1981 Phys. Rev. B 23 823
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