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The base current (IB) of silicon bipolar transistor degrades when it is subjected to total ionizing dose (TID) irradiation, which is due to the generation of oxide trapped charges (Not) in the oxide layer and interface traps (Nit) at the silica/silicon interface. In this work, we investigate the statistical characteristic of IB of bipolar transistors and its possible microscopic origin. Especially, we carry out TID irradiation experiments on a large sample size of gated lateral PNP (GLPNP) transistors. Forty GLPNP transistors are sequentially irradiated to the total doses of 0.6 krad (Si), 2.6 krad (Si), 4.0 krad (Si), 7.4 krad (Si), and 10.8 krad (Si). The statistical characteristics of their IB
, Not, and Nit are obtained from the Gummel, gate sweep (GS), and sub-threshold sweep (DS) curves, respectively. It is found that no matter what the dose is, IB , Not, and Nit all follow a lognormal distribution. However, the distribution parameters change as the irradiation dose increases. Remarkably, the statistical median and standard deviation of IB as a function of dose show a strong correlation with those of Not , but essentially differ from those of Nit. This fact uncovers that for our research objects and dose rate, the sample-to-sample variability of IB mainly stems from the variation of Not . These interesting results should have potential applications in exploring the mechanism and evaluating the irradiation reliability of bipolar microcircuits. -
Keywords:
- bipolar transistor /
- total ionization dose effect /
- statistical characteristics /
- correlation
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
[18] Li X J, Yang J, Chen H, Dong S, Lv G 2019 IEEE Trans. Nucl. Sci. 66 1612
Google Scholar
[19] Winokur P S, Boesch H E, McGarrity Jr J M, McLean F B 1979 J. Appl. Phys. 50 3492
Google Scholar
[20] Gaddum J H 1945 Nature 156 463
Google Scholar
[21] Barnaby H, Vermeire B, Campola M 2015 IEEE Trans. Nucl. Sci. 62 1658
Google Scholar
[22] Barnaby H, Smith S, Schrimpf R, Fleetwood D, Pease R 2002 IEEE Trans. Nucl. Sci. 49 2643
Google Scholar
[23] Tolleson B S, Adell P, Rax B, Barnaby H, Privat A, Han X, Mahmud A, Livingston I 2018 IEEE Trans. Nucl. Sci. 65 1488
Google Scholar
[24] Pierret R F, Neudeck G W 1987 Advanced Semiconductor Fundamentals (Vol. 6) (Massachusetts: Addison-Wesley Reading) pp123−235
[25] McWhorter P, Winokur P 1986 Applied Physical Letters 48 133
[26] Rowsey N L, Law M E, Schrimpf R D, Fleetwood D M, Tuttle B R, Pantelides S T 2011 IEEE Trans. Nucl. Sci. 58 2937
Google Scholar
[27] Song Y, Zhang G, Liu Y, Zhou H, Zhong L, Dai G, Zuo X, Wei S H 2020 arXiv preprint arXiv 2008 04486
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图 1 GLPNP器件的结构示意图
Figure 1. Structure of the GLPNP transistor.
图 2 不同总剂量条件下GLPNP基极电流的分布特性
Figure 2. Statistical characteristics of the base current of GLPNP under different total doses as indicated in each subfigure.
图 3 分布参数 (a)
$ \mu $ 和 (b)$ \sigma $ 随总剂量的变化规律Figure 3. Statistical parameters (a)
$ \mu $ and (b)$ \sigma $ as a function of the total dose.
图 4 不同总剂量条件下Not的分布特性
Figure 4. Statistical characteristics of Not under different total dose irradiations.
图 5 不同总剂量条件下Nit分布特性
Figure 5. Statistical characteristics of Nit under different total dose irradiations.
表 1 GLPNP的结构尺寸参数
Table 1. Structure parameters of the GLPNP transistor.
序号 结构 尺寸参数 1 发射极尺寸 直径 = 9 μm 2 基区尺寸 外内半径差12 μm
空心圆环3 集电极尺寸 面积 = 1449.135 μm2 4 发射极与集电极距离
(EC间距)L = 12 μm 5 集电极与基区距离
(CB间距)L = 14 μm 
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[1] Bernstein K, Frank D J, Gattiker A R 2006 IBM J. Res. Dev. 50 433
Google Scholar
[2] Blair R R 1963 IEEE Trans. Nucl. Sci. 10 35
Google Scholar
[3] Krieg J, Tuflinger T, Pease R 2001 NSREC Vancouver British Columbia, Canada, July 16–20, 2001 pp167–172
[4] Pease R L, Combs W E, Johnston A, Carriere T, Poivey C, Gach A, Mc- Clure S 1996 IEEE REDW Indian Wells California, USA, July 19−23, 1996 pp28−34
[5] Johnston A H, Lancaster C A 1979 IEEE Trans. Nucl. Sci. 26 4769
Google Scholar
[6] Kruckmeyer K, McGee L, Brown B, Hughart D 2008 IEEE REDW Tucson Arizon, USA, July 14–18, 2008 pp110–116
[7] Kruckmeyer K, McGee L, Brown B, Miller L 2009 RADECS 2009 Brugge, Belgium, September 14–18, 2009 pp586–592
[8] Gorelick J L, Ladbury R, Kanchawa L 2004 IEEE Trans. Nucl. Sci. 51 3679
Google Scholar
[9] Guillermin J, Sukhaseum N, Varotsou A, Privat A, Garcia P, VailléM, Thomas J C, Chatry N, Poivey C 2016 RADECS 2016 Bremen, Germany, September 19−23, 2016 pp1−7
[10] Bozovich A N, Irom F 2017 IEEE REDW New Orleans, United States, July 17−21, 2017 pp1−8
[11] Song Y, Zhou H, Cai X F 2020 ACS Appl. Mater. Interfaces 12 29993
[12] Song Y, Wei S H 2020 ACS Appl. Electron. Mater. 2 3783
Google Scholar
[13] Dressendorfer P V 1998 Tech. Rep. (Sandia National Labs., Albuquerque, NM, United States) pp1–9
[14] McLean F B, Oldham T R 1987 Tech. Rep. (DTIC Document) pp1−8
[15] McWhorter P, Winokur P 1986 Appl. Phys. Lett. 48 133
Google Scholar
[16] Ortiz-Conde A, Sánchez F G, Liou J J, Cerdeira A, Estrada M, Yue Y 2002 Microelectron. Reliab. 42 583
Google Scholar
[17] Ball D R, Schrimpf R D, Barnaby H J 2002 IEEE Trans. Nucl. Sci. 49 3185
Google Scholar
[18] Li X J, Yang J, Chen H, Dong S, Lv G 2019 IEEE Trans. Nucl. Sci. 66 1612
Google Scholar
[19] Winokur P S, Boesch H E, McGarrity Jr J M, McLean F B 1979 J. Appl. Phys. 50 3492
Google Scholar
[20] Gaddum J H 1945 Nature 156 463
Google Scholar
[21] Barnaby H, Vermeire B, Campola M 2015 IEEE Trans. Nucl. Sci. 62 1658
Google Scholar
[22] Barnaby H, Smith S, Schrimpf R, Fleetwood D, Pease R 2002 IEEE Trans. Nucl. Sci. 49 2643
Google Scholar
[23] Tolleson B S, Adell P, Rax B, Barnaby H, Privat A, Han X, Mahmud A, Livingston I 2018 IEEE Trans. Nucl. Sci. 65 1488
Google Scholar
[24] Pierret R F, Neudeck G W 1987 Advanced Semiconductor Fundamentals (Vol. 6) (Massachusetts: Addison-Wesley Reading) pp123−235
[25] McWhorter P, Winokur P 1986 Applied Physical Letters 48 133
[26] Rowsey N L, Law M E, Schrimpf R D, Fleetwood D M, Tuttle B R, Pantelides S T 2011 IEEE Trans. Nucl. Sci. 58 2937
Google Scholar
[27] Song Y, Zhang G, Liu Y, Zhou H, Zhong L, Dai G, Zuo X, Wei S H 2020 arXiv preprint arXiv 2008 04486
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