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Total ionizing dose （TID） effects of the deep submicron MOSFET （metal oxide semiconductor field effect transistor） with delta doping profiles and uniform doping profiles in the channel region are analyzed in this paper. The influence of both doping profiles on the leakage current and threshold voltage is investigated. The results show that, the leakage current of MOSFET with delta doping profile is 2—3 orders lower than that with the uniform doping profile when the radiation dose is lower than 500 krad. Yet when the radiation dose is higher than 500 krad, the delta doping profile dose not show significant improvement compared with uniform doping profile as the trapped holes in the MOSFET saturate. But the threshold voltage shift is about 40 mV less than that with the uniform doping profile. Therefore, the TID effects of the deep submicron MOSFET can be improved by adopting the delta doping profile. The optimization of the delta-doping profile to further improve the TID effects is also given in this paper, which provides the guideline for the radiation hardened design.
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Keywords:
- TID effects /
- delta doping /
- leakage current /
- radiation hardeness
[1] ［1］Jim Schwank et al 2002 IEEE NSREC Short Course Ⅲ-4
[2] ［2］ Saks N S, Ancona M G, Modolo J A 1984 IEEE Trans. Nucl. Sci. 31 1249
[3] ［3］ Shaneyfelt M R, Dodd P E, Draper B L, Flores R S 1998 IEEE Trans. Nucl. Sci. 45 2584
[4] ［4］Henson W K, Yang N, Kubicek S, Vogel E M, Wortman J J, DeMeyer K, Naem A 2000 IEEE Trans. Electron Dev. 47 1393
[5] ［5］Turowski M, Raman A, Schrimpf R D 2004 IEEE Trans. Nucl. Sci. 51 3166
[6] ［6］Brisset C，Ferlet-cavrois V, Flament O, Mussesu O, Leray J L, Pelloie J L, EscoEer R, Michez A, Cirba C, Bordure G 1996 IEEE Trans Nucl Sci. 43 2651
[7] ［7］Li R M, Du L, Zhuang Y Q, Bao J L 2007 Acta. Phys. Sin. 56 3400 （in Chinese ）［李瑞珉、 杜磊、 庄奕琪、 包军林2007 56 3400］
[8] ［8］Peng S Q, Du L, Zhuang Y Q, Bao J L, He L, Chen W H 2008 Acta. Phys. Sin. 57 5205 （in Chinese ）［彭绍泉、 杜磊、 庄奕琪、 包军林、 何亮、 陈伟华 2008 57 5205］
[9] ［9］Shaneyfelt M R, Dodd P E, Draper B L, Flores R S 1998 IEEE Trans. Nucl. Sci. 45 2584
[10] ］Lacoe R C, Osborn J V, Mayer D C, Witczak S C, Brown S, Robertson R 1999 in Proc. Radiation Effects Data Workshop 82
[11] ］Lacoe R C 2002 in Proc. Int. Reliability Physics Symp 376
[12] ］Jacunski M D, Peckerar M C 1992 IEEE Trans. Nucl. Sci. 39 1947
[13] ］Li D M, Wang Z H, Hf L Y, Gou Q J 2007 Chin. Phys. 16 3760
[14] ］Krantz R J, Aukerman L W, Zietlow T C 1987 IEEE Trans. Nucl. Sci. 34 1196
[15] ］Ma T P, Dressendorfer P V 1989 Ionizing Radiation Effects in MOS Devices and Circuits （New York: Wiley-Interscience） 87
[16] ］Aitken M, Young D R 1977 IEEE Trans. Nucl. Sci. 24 2128
[17] ］Mott N F 1977 Adv. Phys. 26 363
[18] ］Hughes R C 1975 Phys. Rev. B 15 2012
[19] ］TCAD Sentaurus Device User’s Manual, 2005 Synopsys, Mountain View, CA
[20] ］Esqueda I S, Barnaby H J, Alles M L 2004 IEEE Trans. Nucl. Sci. 52 2259
-
[1] ［1］Jim Schwank et al 2002 IEEE NSREC Short Course Ⅲ-4
[2] ［2］ Saks N S, Ancona M G, Modolo J A 1984 IEEE Trans. Nucl. Sci. 31 1249
[3] ［3］ Shaneyfelt M R, Dodd P E, Draper B L, Flores R S 1998 IEEE Trans. Nucl. Sci. 45 2584
[4] ［4］Henson W K, Yang N, Kubicek S, Vogel E M, Wortman J J, DeMeyer K, Naem A 2000 IEEE Trans. Electron Dev. 47 1393
[5] ［5］Turowski M, Raman A, Schrimpf R D 2004 IEEE Trans. Nucl. Sci. 51 3166
[6] ［6］Brisset C，Ferlet-cavrois V, Flament O, Mussesu O, Leray J L, Pelloie J L, EscoEer R, Michez A, Cirba C, Bordure G 1996 IEEE Trans Nucl Sci. 43 2651
[7] ［7］Li R M, Du L, Zhuang Y Q, Bao J L 2007 Acta. Phys. Sin. 56 3400 （in Chinese ）［李瑞珉、 杜磊、 庄奕琪、 包军林2007 56 3400］
[8] ［8］Peng S Q, Du L, Zhuang Y Q, Bao J L, He L, Chen W H 2008 Acta. Phys. Sin. 57 5205 （in Chinese ）［彭绍泉、 杜磊、 庄奕琪、 包军林、 何亮、 陈伟华 2008 57 5205］
[9] ［9］Shaneyfelt M R, Dodd P E, Draper B L, Flores R S 1998 IEEE Trans. Nucl. Sci. 45 2584
[10] ］Lacoe R C, Osborn J V, Mayer D C, Witczak S C, Brown S, Robertson R 1999 in Proc. Radiation Effects Data Workshop 82
[11] ］Lacoe R C 2002 in Proc. Int. Reliability Physics Symp 376
[12] ］Jacunski M D, Peckerar M C 1992 IEEE Trans. Nucl. Sci. 39 1947
[13] ］Li D M, Wang Z H, Hf L Y, Gou Q J 2007 Chin. Phys. 16 3760
[14] ］Krantz R J, Aukerman L W, Zietlow T C 1987 IEEE Trans. Nucl. Sci. 34 1196
[15] ］Ma T P, Dressendorfer P V 1989 Ionizing Radiation Effects in MOS Devices and Circuits （New York: Wiley-Interscience） 87
[16] ］Aitken M, Young D R 1977 IEEE Trans. Nucl. Sci. 24 2128
[17] ］Mott N F 1977 Adv. Phys. 26 363
[18] ］Hughes R C 1975 Phys. Rev. B 15 2012
[19] ］TCAD Sentaurus Device User’s Manual, 2005 Synopsys, Mountain View, CA
[20] ］Esqueda I S, Barnaby H J, Alles M L 2004 IEEE Trans. Nucl. Sci. 52 2259
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