The damage effect and mechanism of the bipolar transistor induced by different types of high power microwaves

Ma Zhen-Yang; Chai Chang-Chun; Ren Xing-Rong; Yang Yin-Tang; Qiao Li-Ping; Shi Chun-Lei

doi:10.7498/aps.62.128501

Abstract

By analyzing the variations of the internal distributions of the temperature with time and the current density and the burnout time with the signal amplitude, we study the internal damage process and mechanism of the typical silicon-based n+-p-n-n+ structure bipolar transistor induced by three kinds of high power microwaves such as triangular wave, sinusoidal wave and square wave. The results show that the base-emitter junction is the damage position and the device is more susceptible to damage under the injection of the square waves. The displacement current and the burnout time increase but the proportion of the displacement current in the total current decreases with signal amplitude increasing. The injected power plays a determinative role in the damage process compared with the displacement current. Adopting the data analysis software, the relation equation between the burnout time t and the signal frequency f is obtained. It is demonstrated that the burnout time increases with signal frequency increasing, and the equations of the three kinds of high power microwaves all agree with the formula t= afb.

Keywords:

Authors and contacts

1.
Key Laboratory of Ministry of Education for Wide Band-Gap, Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071 China
Funds: Project Supported by the National Natural Science Foundation of China (Grant No. 60776034).

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Cited By

[1]	Kim K, Iliadis A A 2010 Solid-State Electronics 54 18
[2]	Iliadis A A, Kim K 2010 IEEE Trans. Dev. Mater. Reliab. 10 347
[3]	Chen X, Du Z W 2010 Int. Rev. Electr. Eng. IREE 5 2500
[4]	Wang H Y, Li J Y, Zhou Y H, Hu B, Yu X Y 2009 Electromagnetics 29 393
[5]	Nana R K, Korte S, Dickmann S, Garbe H, Sabath F 2009 Adv. Radio Sci. 7 249
[6]	Wang H Y, Li J Y, Li H 2008 Prog. Electromagn. Res. 87 313
[7]	Mansson D, Thottappillil R, Nilsson T, Lunden O, Backstrom M 2008 IEEE Trans. Electromagn. Compat. 50 434
[8]	Mansson D, Thottappillil R, Backstrom M, Lunden O 2008 IEEE Trans. on Electromagn. Compat. 50 101
[9]	You H L, Lan J C, Fan J P, Jia X Z, Zha W 2012 Acta Phys. Sin. 61 108501 (in Chinese) [游海龙, 蓝建春, 范菊平, 贾新章, 查薇 2012 61 108501]
[10]	Ren Z, Yin W Y, Shi Y B, Liu Q H 2010 IEEE Trans. Electron Dev. 57 345
[11]	Chai C C, Xi X W, Ren X R, Yang Y T, Ma Z Y 2010 Acta Phys. Sin. 59 8118 (in Chinese) [柴常春, 席晓文, 任兴荣, 杨银堂, 马振洋 2010 59 8118]
[12]	Kim K, Iliadis A A 2007 IEEE Trans. Electromagn. Compat. 49 329
[13]	Ma Z Y, Chai C C, Ren X R, Yang Y T, Chen B 2012 Acta Phys. Sin. 61 078501 (in Chinese) [马振洋, 柴常春, 任兴荣, 杨银堂, 陈斌2012 物理学报 61 078501]
[14]	Ma Z Y, Chai C C, Ren X R, Yang Y T, Chen B, Zhao Y B 2012 Chin. Phys. B 21 058502
[15]	Ma Z Y, Chai C C, Ren X R, Yang Y T, Chen B, Song K, Zhao Y B 2012 Chin. Phys. B 21 098502
[16]	Integrated Systems Engineering Corp. 2004 ISE-TCAD Dessis Simulation User's Manual, Zurich, Switzerland, 2004 p208
[17]	Radasky W A 2010 Asia-Pacific Symposium on Electromagnetic Compatibility Beijing, China, April 12-16, 2010 p758
[18]	Kim K, Iliadis A A 2007 IEEE Trans. Electromagn. Compat. 49 876
[19]	Li M Z, Guo C, Chen X B 2006 J. Semicond. 27 1989 (in Chinese) [李梅芝, 郭超, 陈星弼 2006 半导体学报 27 1989]

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Catalog

Vol. 62, Issue 12 - 2013-06-20

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