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中国物理学会期刊
Wang Chen, Xu Yi-Hong, Li Cheng, Lin Hai-Jun, Zhao Ming-Jie. Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing methodJ. Acta Physica Sinica, 2019, 68(17): 178501. DOI: 10.7498/aps.68.20190699
Citation: Wang Chen, Xu Yi-Hong, Li Cheng, Lin Hai-Jun, Zhao Ming-Jie. Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing methodJ. Acta Physica Sinica, 2019, 68(17): 178501. DOI: 10.7498/aps.68.20190699

    Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing method

    CSTR: 32037.14.aps.68.20190699
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