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The raster scanning experiments for KDP crystal are carried out in R-on-1 mode at energy density below zero probability damage threshold to investigate the damage resistance capability as a function of pulse number after ultraviolet (UV) laser irradiation by using a tripled Nd:YAG laser. The1-on-1 damage measurements after laser irradiation indicate that the damage resistance of KDP is obviously enhanced and the increment is dependent on scanning number. The optical absorption and photoluminescence spectra show that the evolution of oxygen-vacancy centers in KDP crystal is important to the damage resistance capability. The Raman and infrared spectra show that the polarization distortions of PO4, P–OH and P＝O groups induced by UV laser irradiation also contribute to the changes of damage resistance.
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Keywords:
- laser conditioning /
- fluorescence /
- Raman spectra /
- infrared spectra
[1] Koechner W 1999 Solid State Laser Engineering (Berlin: Springer-Verlag) p620
[2] De Yoreo J J, Burnham A K, Whitman P K 2002 Int. Mater. Rev. 47 113
[3] Mu X M, Wang S L, Wang B, Xu X G, Sun X, Gu Q T, Li Y P, Liu B, Sun S T, Lu Y Q, Sun Y 2008 J. Synth. Cryst. 37 5 (in Chinese) [牟晓明, 王圣来, 王波, 许心光, 孙洵, 顾庆天, 李毅平, 刘冰, 孙绍涛, 卢永强, 孙云 2008 人工晶体学报 37 5]
[4] André M L 1999 Fusion Eng. Design 44 43
[5] DeMange P, Negres R, Carr C, Radousky H, Demos S 2005 Proc. SPIE 5991 599107
[6] Swain J, Stokowski S, Milam D, Rainer F 1982 Appl. Phys. Lett. 40 350
[7] Feit M D, Rubenchik A M 2003 Proc. SPIE 5250 74
[8] Staggs M, Yan M, Runkel M 2000 Proc. SPIE 4347 400
[9] Zhao Y A, Hu G H, Shao J D, Liu X F, He H B, Fan Z X 2009 Proc. SPIE 7504 75041L
[10] Wang K P, Yan S 2011 Acta Phys. Sin. 60 097401 (in Chinese) [王坤鹏, 闫石 2011 60 097401]
[11] Garces N Y, Stevens K T, Halliburton L E, Demos S G, Radousky H B, Zaitseva N P 2001 J. Appl. Phys. 89 47
[12] Chirila M M, Garces N Y, Halliburton L E, Demos S G, Land T A, Radousky H B 2003 J. Appl. Phys. 94 6456
[13] Agrawal D K, Perry C H 1971 In Light Scattering in Solids（Paris: Flammarion） p429
[14] Serra K C, Melo F E A, Mendes Filho J, Germano F A, Moreira J E 1988 Solid State Commun. 66 575
[15] Negres A, Kucheyev S O, DeMange P, Bostedt C, van Buuren T, Nelson A J, Demos S G 2005 Appl. Phys. Lett. 86 171107
[16] Lu G W, Xia H R, Guan J T, Zhang S Q, Chen Y, Zhou Y Q 2002 Chin. J. Light Scatter. 14 26
[17] Delci Z, Shyamala D, Karuna S, Senthil A, Thayumanavan A 2012 Int. J. Chem. Tech. Res. 4 816
[18] McMillan J A, Clemens J M 1978 J. Chem. Phys. 68 3627
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[1] Koechner W 1999 Solid State Laser Engineering (Berlin: Springer-Verlag) p620
[2] De Yoreo J J, Burnham A K, Whitman P K 2002 Int. Mater. Rev. 47 113
[3] Mu X M, Wang S L, Wang B, Xu X G, Sun X, Gu Q T, Li Y P, Liu B, Sun S T, Lu Y Q, Sun Y 2008 J. Synth. Cryst. 37 5 (in Chinese) [牟晓明, 王圣来, 王波, 许心光, 孙洵, 顾庆天, 李毅平, 刘冰, 孙绍涛, 卢永强, 孙云 2008 人工晶体学报 37 5]
[4] André M L 1999 Fusion Eng. Design 44 43
[5] DeMange P, Negres R, Carr C, Radousky H, Demos S 2005 Proc. SPIE 5991 599107
[6] Swain J, Stokowski S, Milam D, Rainer F 1982 Appl. Phys. Lett. 40 350
[7] Feit M D, Rubenchik A M 2003 Proc. SPIE 5250 74
[8] Staggs M, Yan M, Runkel M 2000 Proc. SPIE 4347 400
[9] Zhao Y A, Hu G H, Shao J D, Liu X F, He H B, Fan Z X 2009 Proc. SPIE 7504 75041L
[10] Wang K P, Yan S 2011 Acta Phys. Sin. 60 097401 (in Chinese) [王坤鹏, 闫石 2011 60 097401]
[11] Garces N Y, Stevens K T, Halliburton L E, Demos S G, Radousky H B, Zaitseva N P 2001 J. Appl. Phys. 89 47
[12] Chirila M M, Garces N Y, Halliburton L E, Demos S G, Land T A, Radousky H B 2003 J. Appl. Phys. 94 6456
[13] Agrawal D K, Perry C H 1971 In Light Scattering in Solids（Paris: Flammarion） p429
[14] Serra K C, Melo F E A, Mendes Filho J, Germano F A, Moreira J E 1988 Solid State Commun. 66 575
[15] Negres A, Kucheyev S O, DeMange P, Bostedt C, van Buuren T, Nelson A J, Demos S G 2005 Appl. Phys. Lett. 86 171107
[16] Lu G W, Xia H R, Guan J T, Zhang S Q, Chen Y, Zhou Y Q 2002 Chin. J. Light Scatter. 14 26
[17] Delci Z, Shyamala D, Karuna S, Senthil A, Thayumanavan A 2012 Int. J. Chem. Tech. Res. 4 816
[18] McMillan J A, Clemens J M 1978 J. Chem. Phys. 68 3627
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