-
In the process of preparing nanosilicon, the crystallization process is an important part to influence and improve the efficiency of nanosilicon luminescence. Thermal annealing, laser annealing, and electron beam irradiation are different ways of crystallizing the nanosilicon. Different photoluminescence (PL) spectra and structures of nanocrystalline silicon are observed for different treatment time of crystallization. The experimental results show that choosing an appropriate crystallization method and parameters is very important for preparing the nanosilicon crystalline structures. High luminous efficiency can be obtained by controlling the parameters properly in the processes of preparing silicon quantum dots (QDs) and quantum surface, especially. It is discovered experimentally that better nanosilicon crystalline structure such as nanosilicon QD structure, better PL luminescence, and the doped localized state luminescence of nanocrystalline silicon can be obtained when the crystallization time is about 20 min. According to the nanosilicon crystallization process under thermal annealing, laser annealing and electron beam irradiation, a physical model of the effect of crystallization time on the nanosilicon localized state luminescence is established in this paper, which can explain the effect of crystallization time on the localized state luminescence of the nanosilicon.
-
Keywords:
- laser annealing /
- electron beam irradiation /
- crystallization /
- nanosilicon
[1] Canham L T 1990 Appl. Phys. Lett. 57 1046
[2] Stupca M, Alsalhi M, Alsaud T, Almuhanna A, Nayfeh M H 2007 Appl. Phys. Lett. 91 063107
[3] Presti C D, Irrera A, Franz G, Crupi I, Priolo F, Iacona F, Stefano G D, Piana A, Sanfilippo D, Fallica P G 2006 Appl. Phys. Lett. 88 033501
[4] Kim B H, Davis R F, Cho C H, Park S J 2009 Appl. Phys. Lett. 95 073113
[5] Dal N L, Cazzanelli M, Pavesi L, Ossicini S, Pacifici D, Franzo G, Priolo F, Iacona F 2003 Appl. Phys. Lett. 82 4636
[6] Ruan J, Fauchet P M, Dal N L, Cazzanelli M, Pavesi L 2003 Appl. Phys. Lett. 83 5479
[7] Rani J R, Mahadevan P V P, Ajimsha R S, Jayaraj M K, Jayasree R S 2006 J. Appl. Phys. 100 014302
[8] Huang W Q, Huang Z M, Cheng H Q, Miao X J, Shu Q, Liu S R, Qin C J 2012 Appl. Phys. Lett. 101 171601
[9] Huang W Q, Xu L, Wu K Y 2007 J. Appl. Phys. 102 053517
[10] Bao J, Tabbal M, Kim T, Charnvanichborikarn S, Williams J S, Aziz M J, Capasso F 2007 Opt. Express 15 6727
[11] Huang W Q, Huang Z M, Miao X J, Yin J, Zhou N J, Liu S R, Qin C J 2014 Acta Phys. Sin. 63 034201 (in Chinese) [黄伟其, 黄忠梅, 苗信建, 尹君, 周年杰, 刘世荣, 秦朝建 2014 63 034201]
[12] Qin J J, Shao J Z, Liu F J, Fang X D 2015 Infrared and Laser Engineering 44 959 (in Chinese) [秦娟娟, 邵景珍, 刘凤娟, 方晓东 2015 红外与激光工程 44 959]
[13] Nie M 2014 M. S. Dissertation (Beijing: Peking University) (in Chinese) [聂朦 2014 硕士学位论文 (北京: 北京大学) ]
[14] Xu Z 2014 M. S. Dissertation (Lanzhou: Lanzhou University) (in Chinese) [许壮 2014 硕士学位论文 (兰州: 兰州大学) ]
[15] Huang L, Jin J, Shi W M, Yuan Z J, Yang W G, Cao Z C, Wang L J, Zhou J, Lou Q H 2014 Chin. Phys. B 23 034208
[16] Qin G G, Liu X S, Ma S Y, Lin J, Yao G Q, Lin X Y, Lin K X 1997 Phys. Rev. B 55 12876
[17] Wolkin M V, Jorne J, Fauchet P M 1999 Phys. Rev. Lett. 82 197
[18] Huang W Q, Jin F, Wang H X, Xu L, Wu K Y, Liu S R, Qin C J 2008 Appl. Phys. Lett. 92 221910
[19] Huang W Q, Huang Z M, Miao X J, Liu S R, Qin C J 2012 Acta Phys. Sin. 61 214205 (in Chinese) [黄伟其, 黄忠梅, 苗信建, 刘世荣, 秦朝建 2012 61 214205]
-
[1] Canham L T 1990 Appl. Phys. Lett. 57 1046
[2] Stupca M, Alsalhi M, Alsaud T, Almuhanna A, Nayfeh M H 2007 Appl. Phys. Lett. 91 063107
[3] Presti C D, Irrera A, Franz G, Crupi I, Priolo F, Iacona F, Stefano G D, Piana A, Sanfilippo D, Fallica P G 2006 Appl. Phys. Lett. 88 033501
[4] Kim B H, Davis R F, Cho C H, Park S J 2009 Appl. Phys. Lett. 95 073113
[5] Dal N L, Cazzanelli M, Pavesi L, Ossicini S, Pacifici D, Franzo G, Priolo F, Iacona F 2003 Appl. Phys. Lett. 82 4636
[6] Ruan J, Fauchet P M, Dal N L, Cazzanelli M, Pavesi L 2003 Appl. Phys. Lett. 83 5479
[7] Rani J R, Mahadevan P V P, Ajimsha R S, Jayaraj M K, Jayasree R S 2006 J. Appl. Phys. 100 014302
[8] Huang W Q, Huang Z M, Cheng H Q, Miao X J, Shu Q, Liu S R, Qin C J 2012 Appl. Phys. Lett. 101 171601
[9] Huang W Q, Xu L, Wu K Y 2007 J. Appl. Phys. 102 053517
[10] Bao J, Tabbal M, Kim T, Charnvanichborikarn S, Williams J S, Aziz M J, Capasso F 2007 Opt. Express 15 6727
[11] Huang W Q, Huang Z M, Miao X J, Yin J, Zhou N J, Liu S R, Qin C J 2014 Acta Phys. Sin. 63 034201 (in Chinese) [黄伟其, 黄忠梅, 苗信建, 尹君, 周年杰, 刘世荣, 秦朝建 2014 63 034201]
[12] Qin J J, Shao J Z, Liu F J, Fang X D 2015 Infrared and Laser Engineering 44 959 (in Chinese) [秦娟娟, 邵景珍, 刘凤娟, 方晓东 2015 红外与激光工程 44 959]
[13] Nie M 2014 M. S. Dissertation (Beijing: Peking University) (in Chinese) [聂朦 2014 硕士学位论文 (北京: 北京大学) ]
[14] Xu Z 2014 M. S. Dissertation (Lanzhou: Lanzhou University) (in Chinese) [许壮 2014 硕士学位论文 (兰州: 兰州大学) ]
[15] Huang L, Jin J, Shi W M, Yuan Z J, Yang W G, Cao Z C, Wang L J, Zhou J, Lou Q H 2014 Chin. Phys. B 23 034208
[16] Qin G G, Liu X S, Ma S Y, Lin J, Yao G Q, Lin X Y, Lin K X 1997 Phys. Rev. B 55 12876
[17] Wolkin M V, Jorne J, Fauchet P M 1999 Phys. Rev. Lett. 82 197
[18] Huang W Q, Jin F, Wang H X, Xu L, Wu K Y, Liu S R, Qin C J 2008 Appl. Phys. Lett. 92 221910
[19] Huang W Q, Huang Z M, Miao X J, Liu S R, Qin C J 2012 Acta Phys. Sin. 61 214205 (in Chinese) [黄伟其, 黄忠梅, 苗信建, 刘世荣, 秦朝建 2012 61 214205]
Catalog
Metrics
- Abstract views: 6391
- PDF Downloads: 256
- Cited By: 0
下载:
