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We have investigated the growth of thin selenium layer on Si (100) substrate by molecular beam epitaxy (MBE). By controlling the temperatures of the silicon substrate and the selenium source during growth, an ultrathin film of Se is successfully grown on the Si (100) substrate. As the Si (100) surface is passivated by the ultrathin film of Se, the electrical property of the Ti/n-Si (100) contact is shown to be ideally ohmic, with low resistance and relatively high thermal stability.
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Keywords:
- Se /
- passivation /
- ohmic contact /
- thermal stability
[1] Zhu L B, Bao X 1992 Physics of Surface and Interface (Tianjin: Tianjin University Press) (in Chinese) [朱履冰、 包 兴 1992 表面与界面物理 (天津: 天津大学出版社)]
[2] Han D D, Liu X Y, Kang J F, Xia Z L, D G, Han R Q 2005 Chin. Phys. 14 1041
[3] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣、 崔晓英、 胡辉勇、 戴显英、 宣荣喜 2007 56 3504]
[4] Zhu C G, Xu P S, Lu E D, Xu F Q, Pan H B 2001 Acta Phys. Sin. 50 2212 (in Chinese) [祝传刚、 徐彭寿、 陆尔东、 徐法强、 潘海斌 2001 50 2212]
[5] Ali Muhammad Y, Tao M 2007 J. Appl. Phys. 101 103708
[6] Wong H S, Chan L, Samudra G, Yeo Y C 2008 Appl. Phys. Lett. 93 072103
[7] Yablonovitch E, Sandroff C J, Bhat R, Gmitter T 1987 Appl. Phys. Lett. 51 439
[8] Efthimios Kaxiras 1991 Phys. Rev. B 43 6824
[9] Tao M, Udeshi D, Basit N, Maldonado E, Kirk W P 2003 Appl. Phys. Lett. 82 1559
[10] Udeshi D, Maldonado E, Xu Y Q, Tao M, Kirk W P 2004 J. Appl. Phys. 95 4219
[11] Papageorgopoulos A C, Kamaratos M 2000 Surface Science 466 173
[12] Tao M, Udeshi D, Agarwal S, Maldonado E, Kirk W P 2004 Solid-State Electronics 48 335
[13] Cowley A M, Sze S M 1965 J. Appl. Phys. 36 3212
[14] Lin D S, Chen R P 1999 Phys. Rev. B 60 8461
[15] Nemanich R J, Fiordalice R, Jeon H 1989 IEEE J. Quantum Electron. 25 997
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[1] Zhu L B, Bao X 1992 Physics of Surface and Interface (Tianjin: Tianjin University Press) (in Chinese) [朱履冰、 包 兴 1992 表面与界面物理 (天津: 天津大学出版社)]
[2] Han D D, Liu X Y, Kang J F, Xia Z L, D G, Han R Q 2005 Chin. Phys. 14 1041
[3] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣、 崔晓英、 胡辉勇、 戴显英、 宣荣喜 2007 56 3504]
[4] Zhu C G, Xu P S, Lu E D, Xu F Q, Pan H B 2001 Acta Phys. Sin. 50 2212 (in Chinese) [祝传刚、 徐彭寿、 陆尔东、 徐法强、 潘海斌 2001 50 2212]
[5] Ali Muhammad Y, Tao M 2007 J. Appl. Phys. 101 103708
[6] Wong H S, Chan L, Samudra G, Yeo Y C 2008 Appl. Phys. Lett. 93 072103
[7] Yablonovitch E, Sandroff C J, Bhat R, Gmitter T 1987 Appl. Phys. Lett. 51 439
[8] Efthimios Kaxiras 1991 Phys. Rev. B 43 6824
[9] Tao M, Udeshi D, Basit N, Maldonado E, Kirk W P 2003 Appl. Phys. Lett. 82 1559
[10] Udeshi D, Maldonado E, Xu Y Q, Tao M, Kirk W P 2004 J. Appl. Phys. 95 4219
[11] Papageorgopoulos A C, Kamaratos M 2000 Surface Science 466 173
[12] Tao M, Udeshi D, Agarwal S, Maldonado E, Kirk W P 2004 Solid-State Electronics 48 335
[13] Cowley A M, Sze S M 1965 J. Appl. Phys. 36 3212
[14] Lin D S, Chen R P 1999 Phys. Rev. B 60 8461
[15] Nemanich R J, Fiordalice R, Jeon H 1989 IEEE J. Quantum Electron. 25 997
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