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The ohmic reflectivity of Ni/Ag/Ti/Au in contact with p-GaN is studied. It is found that under different thickness values of Ni, different annealing temperatures and different annealing atmospheres, the performances of Ni/Ag/Ti/Au electrode are greatly changed. The contact resistivity is measured using the transmission line model. The reflectivity of the electrode is investigated by using a spectrophotometer. The results reveal that the thinner the Ni metal layer, the higher its reflectivity is, in addition, the thickness value of Ni metal has a little influence on contact resistivity. There appears an abrupt decrease in reflectivity of electrode after annealing at a temperature higher than 400 ℃. It is noticed that the reflectivity decreases more sharply after annealing in oxygen atmosphere than in nitrogen atmosphere. However, annealing in oxygen atmosphere is more helpful to reduce the contact resistivity. The comprehensive evaluations of the contact resistivity and reflectivity indicate that the better performances of Ni (1 nm)/Ag/Ti/Au electrode after rapid annealing in oxygen atmosphere at 400 ℃ are achieved: its contact resistance reaches 5.5× 10-3 Ω·cm2 and reflectivity rises up to 85% at 450 nm. Light emitting diode (LED) of vertical structure is fabricated with an optimal electrode. The LED under an injection current of 350 mA can achieve the following working parameters: the working voltage is 3.2 V, the optical output power is 270 mW, and the electro-optical conversion efficiency is 24%.
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Keywords:
- p-GaN /
- ohmic contact /
- reflectivity /
- rapidly thermal annealing
[1] Ponce F A, Bour D P 1997 Nature 386 351
[2] Yang L, Ma X H, Feng Q, Hao Y 2008 Chin. Phys. B 17 7
[3] Ding Z B, Yao S D, Wang K, Cheng K 2006 Acta Phys. Sin. 55 2977 (in Chinese)[丁志博, 姚淑德, 王坤, 程凯 2006 55 2977]
[4] Xue Z Q, Huang S R, Zhang B P, Chen C 2010 Acta Phys. Sin. 59 1268 (in Chinese)[薛正群, 黄生荣, 张保平, 陈朝 2010 59 1268]
[5] Park J, Shin M, Lee C C 2004 Opt. Lett. 29 2656
[6] Kim H, Choi K K, Kim K K, Cho J, Lee S N, Park Y, Kwak J S, Seong T Y 2008 Opt. Lett. 33 1273
[7] Zheng C, Zhang S M, Wang H, Liu J P, Wang H B, Li Z C, Feng M X, Zhao D G, Liu Z S, Jiang D S, Yang H 2012 Chin. Phys. Lett. 29 017301
[8] Maeda T, Koide Y, Murakami M 1999 Appl. Phys. Lett. 75 4145
[9] Li X J, Zhao D G, He X G, Wu L L, Li L, Yang J, Le L C, Chen P, Liu Z S, Jiang D S 2013 Acta Phys. Sin. 62 206801 (in Chinese)[李晓静, 赵德刚, 何晓光, 吴亮亮, 李亮, 杨静, 乐伶聪, 陈平, 刘宗顺, 江德生 2013 62 206801]
[10] Chang L B, Shire C C, Jeng M J 2007 Appl. Phys. Lett. 90 163515
[11] Jang H W, Lee J L 2004 Appl. Phys. Lett. 85 5920
[12] Song J O, Kwak J S, Park Y, Seong T Y 2005 Appl. Phys. Lett. 86 062104
[13] Kim K S, Suh M G, Cho S N 2012 Appl. Phys. Lett. 100 061113
[14] Wu D F, Yan B D 1989 Principle, Measurement and Processing of Ohmic Contacts on Metal-Semiconductor Interface (Shanghai: Shanghai Jiaotong University Press) p8 (in Chinese) [吴鼎芬, 颜本达 1989 金属-半导体界面欧姆接触的原理、测试与工艺 (上海: 上海交通大学出版社) 第8页]
[15] Jang H W, Kim S Y, Lee J L 2003 J. Appl. Phys. 94 1748
[16] Lin Y J 2004 Appl. Phys. Lett. 84 2760
[17] Greco G, Prystawko P, Leszczy'nski M, Nigro R L, Raineri V, Roccaforte F 2011 J. Appl. Phys. 110 123703
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[1] Ponce F A, Bour D P 1997 Nature 386 351
[2] Yang L, Ma X H, Feng Q, Hao Y 2008 Chin. Phys. B 17 7
[3] Ding Z B, Yao S D, Wang K, Cheng K 2006 Acta Phys. Sin. 55 2977 (in Chinese)[丁志博, 姚淑德, 王坤, 程凯 2006 55 2977]
[4] Xue Z Q, Huang S R, Zhang B P, Chen C 2010 Acta Phys. Sin. 59 1268 (in Chinese)[薛正群, 黄生荣, 张保平, 陈朝 2010 59 1268]
[5] Park J, Shin M, Lee C C 2004 Opt. Lett. 29 2656
[6] Kim H, Choi K K, Kim K K, Cho J, Lee S N, Park Y, Kwak J S, Seong T Y 2008 Opt. Lett. 33 1273
[7] Zheng C, Zhang S M, Wang H, Liu J P, Wang H B, Li Z C, Feng M X, Zhao D G, Liu Z S, Jiang D S, Yang H 2012 Chin. Phys. Lett. 29 017301
[8] Maeda T, Koide Y, Murakami M 1999 Appl. Phys. Lett. 75 4145
[9] Li X J, Zhao D G, He X G, Wu L L, Li L, Yang J, Le L C, Chen P, Liu Z S, Jiang D S 2013 Acta Phys. Sin. 62 206801 (in Chinese)[李晓静, 赵德刚, 何晓光, 吴亮亮, 李亮, 杨静, 乐伶聪, 陈平, 刘宗顺, 江德生 2013 62 206801]
[10] Chang L B, Shire C C, Jeng M J 2007 Appl. Phys. Lett. 90 163515
[11] Jang H W, Lee J L 2004 Appl. Phys. Lett. 85 5920
[12] Song J O, Kwak J S, Park Y, Seong T Y 2005 Appl. Phys. Lett. 86 062104
[13] Kim K S, Suh M G, Cho S N 2012 Appl. Phys. Lett. 100 061113
[14] Wu D F, Yan B D 1989 Principle, Measurement and Processing of Ohmic Contacts on Metal-Semiconductor Interface (Shanghai: Shanghai Jiaotong University Press) p8 (in Chinese) [吴鼎芬, 颜本达 1989 金属-半导体界面欧姆接触的原理、测试与工艺 (上海: 上海交通大学出版社) 第8页]
[15] Jang H W, Kim S Y, Lee J L 2003 J. Appl. Phys. 94 1748
[16] Lin Y J 2004 Appl. Phys. Lett. 84 2760
[17] Greco G, Prystawko P, Leszczy'nski M, Nigro R L, Raineri V, Roccaforte F 2011 J. Appl. Phys. 110 123703
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