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In this paper, the AlGaN/GaN HEMT (high electron mobility transistors) with different ohmic contact structures are fabricated, and the effect of different ohmic contact pattern on GaN HEMT electrical properties is studied. A conventional ohmic contact electrode structure and a new ohmic contact structure with a contact hole are fabricated and subjected to rapid thermal annealing (RTA) in flowing N2. After different structured AlGaN/GaN HEMTs are annealed at 750 ℃ for 30 seconds, in HEMTs with a conventional structure ohmic contact still does not form while in the device with ohmic contact holes a good ohmic contact is already formed. Then the surface morphology of different multilayer electrode structures is measured. Comparing Ti/Al/Ti/Au with Ti/Al/Ni/Au, we can conclude that the structure Ti/Al/Ni/Au has a more smooth surface after annealing. After testing the HEMT devices with different structures, higher transconductance and saturation current are found for the devices with ohmic contact holes. But a serious current collapse phenomenon has been observed when the gate voltage is set between 0.5 V and 2 V.
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Keywords:
- AlGaN/GaN /
- high electron mobility transistors /
- ohmic contact
[1] Xie G, Edward X, Niloufar H, Zhang B, Fred Y F, Wai T N 2012 Chin. Phys. B 21 086105
[2] Kong X, Wei K, Liu G G, Liu X Y 2012 Chin. Phys. B 21 128501
[3] Duan B X, Yang Y T, Chen K J 2012 Acta Phys. Sin. 61 247302 (in Chinese) [段宝兴, 杨银堂, Chen K J 2012 61 247302]
[4] Duan B X, Yang Y T 2014 Acta Phys. Sin. 63 57302 (in Chinese) [段宝兴, 杨银堂 2014 63 57302]
[5] Mishra U K, Parikh P, Wu Y F 2002 Proceedings of the IEEE 90 1022
[6] Miller M A, Mohney S E 2007 Appl. Phys. Lett. 91 12103
[7] Dong Z, Wang J, Gong R, Liu S H, Wen C P, Yu M, Xu F J, Hao Y L, Shen B, Wang Y Y 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Shanghai, November 1-4, 2010 p1359
[8] Van Daele B, Van Tendeloo G, Derluyn J, Shrivastava P, Lorenz A, Leys M R, Germain M 2006 Appl. Phys. Lett. 89 201908
[9] Van Daele B, Van Tendeloo G, Ruythooren W, Derluyn J, Leys M R, Germain M 2005 Appl. Phys. Lett. 87 61905
[10] Zhu Y X, Fan Y Y, Cao W W, Deng Y, Liu J P 2013 Chin. J. Lumin. 34 1362 (in Chinese) [朱彦旭, 范玉宇, 曹伟伟, 邓叶, 刘建朋 2013 发光学报 34 1362]
[11] Vetury R, Zhang N Q, Keller S, Mishra U K 2001 IEEE Transactions on Electron Devices 48 560
[12] Hasegawa H, Inagaki T, Ootomo S, Hashizume T 2003 Journal of Vacuum Science m& Technology B: Microelectronics and Nanometer Structures 21 1844
[13] Binari S C, Ikossi K, Roussos J A, Kruppa W, Park D, Dietrich H B, Koleske D D, Wickenden A E, Henry R L 2001 IEEE Transactions on Electron Devices 48 465
[14] Wei W, Lin R B, Feng Q, Hao Y 2008 Acta Phys. Sin. 57 467 (in Chinese) [魏巍, 林若兵, 冯倩, 郝跃 2008 57 467]
[15] Gong X, Lv N, Hao Y, Li P X, Zhou X W, Chen H F 2007 Chinese Journal of Semiconductors 28 1097
[16] Lee B H, Lee S D, Kim S D, Hwang I S, Park H C, Park H M, Rhee J K 2001 Joural of The Electrochemical Society 148 592
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[1] Xie G, Edward X, Niloufar H, Zhang B, Fred Y F, Wai T N 2012 Chin. Phys. B 21 086105
[2] Kong X, Wei K, Liu G G, Liu X Y 2012 Chin. Phys. B 21 128501
[3] Duan B X, Yang Y T, Chen K J 2012 Acta Phys. Sin. 61 247302 (in Chinese) [段宝兴, 杨银堂, Chen K J 2012 61 247302]
[4] Duan B X, Yang Y T 2014 Acta Phys. Sin. 63 57302 (in Chinese) [段宝兴, 杨银堂 2014 63 57302]
[5] Mishra U K, Parikh P, Wu Y F 2002 Proceedings of the IEEE 90 1022
[6] Miller M A, Mohney S E 2007 Appl. Phys. Lett. 91 12103
[7] Dong Z, Wang J, Gong R, Liu S H, Wen C P, Yu M, Xu F J, Hao Y L, Shen B, Wang Y Y 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Shanghai, November 1-4, 2010 p1359
[8] Van Daele B, Van Tendeloo G, Derluyn J, Shrivastava P, Lorenz A, Leys M R, Germain M 2006 Appl. Phys. Lett. 89 201908
[9] Van Daele B, Van Tendeloo G, Ruythooren W, Derluyn J, Leys M R, Germain M 2005 Appl. Phys. Lett. 87 61905
[10] Zhu Y X, Fan Y Y, Cao W W, Deng Y, Liu J P 2013 Chin. J. Lumin. 34 1362 (in Chinese) [朱彦旭, 范玉宇, 曹伟伟, 邓叶, 刘建朋 2013 发光学报 34 1362]
[11] Vetury R, Zhang N Q, Keller S, Mishra U K 2001 IEEE Transactions on Electron Devices 48 560
[12] Hasegawa H, Inagaki T, Ootomo S, Hashizume T 2003 Journal of Vacuum Science m& Technology B: Microelectronics and Nanometer Structures 21 1844
[13] Binari S C, Ikossi K, Roussos J A, Kruppa W, Park D, Dietrich H B, Koleske D D, Wickenden A E, Henry R L 2001 IEEE Transactions on Electron Devices 48 465
[14] Wei W, Lin R B, Feng Q, Hao Y 2008 Acta Phys. Sin. 57 467 (in Chinese) [魏巍, 林若兵, 冯倩, 郝跃 2008 57 467]
[15] Gong X, Lv N, Hao Y, Li P X, Zhou X W, Chen H F 2007 Chinese Journal of Semiconductors 28 1097
[16] Lee B H, Lee S D, Kim S D, Hwang I S, Park H C, Park H M, Rhee J K 2001 Joural of The Electrochemical Society 148 592
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