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A watt-level passive Q-switched mode-locked operation in Tm: LuAG all-solid-state laser is realized for the first time by using graphene oxide (GO) saturable absorber as a mode-locked starting element. The laser is pumped by a wavelength tunable Ti: sapphire laser operating at 794.2 nm. In this experiment, the maximum continuous-wave (CW) output power of 1440 mW, 2030 mW and 2610 mW are obtained by 1.5%, 3% and 5% output coupled (OC) mirrors respectively, in which the corresponding slope efficiencies are 22.3%, 32.6% and 40.6%, respectively. When the GO is inserted into the cavity, the laser bump threshold is further increased due to more intracavity loss. With a 1.5% OC mirror, the absorbed pump threshold is as low as 325 mW, the maximum output power is 787 mW, and the corresponding slope efficiency is 12.5%. With a 3% OC mirror, the absorbed bump threshold is 351 mW, the maximum output power is 1740 mW, and corresponding slope efficiency is 30.3%. With a 5% OC mirror, the QML operation is not realized due to the increase of intracavity loss. Although the laser pump threshold power of 3% OC mirror differs from that of 1.5% OC mirror by 26 mW, the output power is more than twice higher than that of 1.5% OC mirror. For these reasons, we use a 3% OC mirror in our experiment. In this case, a stable QML operation with a threshold of 3420 mW is obtained. When the pump power reaches 8.1 W, the corresponding maximum output power is 1740 mW, the central wavelength is 2023 nm, the repetition frequency is 104.2 MHz, the maximum single pulse energy is 16.7 nJ, and the modulation depth is close to 100%. According to the symmetrical shape of the mode locked pulse and considering the definition of rise time, we can assume that the duration of the pulse is approximately 1.25 times the pulse rise time. So the width of the mode locked pulse is estimated at about 923.8 ps. The results show that the GO is a promising high power saturable absorber in 2 μm wavelength for the QML solid-state laser. In the next stage, we will increase the pump power, optimize the quality of the GO material, and compensate for the dispersion in the cavity. It is expected to achieve a CW mode-locked operation and femtosecond pulse output.
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Keywords:
- high power /
- Tm: LuAG laser /
- Q-switched mode-locking /
- graphene oxide
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图 1 氧化石墨烯可饱和吸收体 (a)拉曼光谱图; (b)扫描电镜图; (c)实物图
Figure 1. (a) Raman spectrum of GO-SAs; (b) SEM of GO-SAs; (c) photograph of GO-SAs.
图 2 Tm: LuAG被动锁模激光实验装置图
Figure 2. The experimental setup of Tm: LuAG passively Q-switched mode locked laser.
图 3 (a)晶体吸收变化图; (b)连续光和锁模输出功率随吸收抽运功率的变化
Figure 3. (a) The change of crystal absorbed power; (b) Relation between average output power and absorbed pump power under continuous-wave and mode-locked operation.
图 4 锁模脉冲信号的输出光谱
Figure 4. The output spectrum of the mode locking signal pulse.
图 5 扫描时间为1 ms, 100 μs, 2 μs和10 ns的锁模脉冲序列
Figure 5. Mode-locked pulse trains recorded in 1 ms, 100 μs, 2 μs and 10 ns per division (div) timescales.
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[1] Kaufmann R, Hibst R 1996 Lasers Surg. Med. 19 324
Google Scholar
[2] Sorokin E, Sorokina I T, Mandon J, Guelachvili G, Picqué N 2007 Opt. Express 15 16540
Google Scholar
[3] Li J, Luo H, Wang L, Liu Y, Yan Z, Zhou K, Zhang L, Turistsyn S K 2015 Sci. Rep. 5 10770
Google Scholar
[4] Yao B Q, Shen Y J, Duan X M, Dai T Y, Ju Y L, Wang Y Z 2014 Opt. Lett. 39 6589
Google Scholar
[5] Feng T, Yang K, Zhao J, Zhao S, Qiao W, Li T, Dekorsy T, He J, Zheng L, Wang Q 2015 Opt. Express 23 11819
Google Scholar
[6] 令维军, 夏涛, 董忠, 左银艳, 李可, 刘勍, 路飞平, 赵小龙, 王勇刚 2008 67 014201
Ling W J, Xia T, Dong Z, Zuo Y Y, Li K, Liu Q, Lu F P, Zhao X L, Wang Y G 2008 Acta Phys. Sin. 67 014201
[7] Cho W B, Schmidt A, Yim J H, Choi S Y, Lee S, Rotermund F, Griebner U, Steinmeyer G, Petrov V, Mateos X, Pujol M C, Carvajal J J, Aguiló M, Díaz F 2009 Opt. Express 17 11007
Google Scholar
[8] Zou X, Leng Y, Li Y, Feng Y, Zhang P, Hang Y, Wang J 2015 Chin. Opt. Lett. 13 081405
[9] Kong L C, Xie G Q, Yuan P, Qian L J, Wang S X, Yu H H, Zhang H J 2015 Photon. Res. 3 A47
Google Scholar
[10] Li L, Jiang S, Wang Y, Wang X, Duan L, Mao D, Li Z, Man B, Si J 2015 Opt. Express 23 28698
Google Scholar
[11] Xu S C, Man B Y, Jiang S Z, Chen C S, Yang C, Liu M, Huang Q J, Zhang C, Bi D, Meng X, Liu F Y 2014 Opt. Laser Technol. 56 393
Google Scholar
[12] Ma J, Xie G Q, Lü P, Gao W L, Yuan P, Qian L J, Yu H H, Zhang H J, Wang J Y, Tang D Y 2012 Opt. Lett. 37 2085
Google Scholar
[13] Ma J, Xie G, Zhang J, Yuan P, Tang D, Qian L 2015 IEEE J. Sel. Top. Quantum Electron. 21 50
Google Scholar
[14] Zhu Y, Murali S, Cai W, Li X, Ji W S, Potts J R, Ruoff R S 2010 Adv. Mater. (Weinheim, Ger. )
22 3906 Google Scholar
[15] Zhang L, Wang Y G, Yu H J, Zhang S B, Hou W, Lin X C, Li J M 2011 Laser Phys. 21 2072
Google Scholar
[16] Wang Y, Qu Z, Liu J, Tsang Y H 2012 J. Lightwave Technol. 30 3259
Google Scholar
[17] Liu J, Wang Y G, Qu Z S, Zheng L H, Su L B, Xu J 2012 Laser Phys. Lett. 9 15
Google Scholar
[18] Wu C, Ju Y, Li Y, Wang Z, Wang Y 2008 Chin. Opt. Lett. 6 415
Google Scholar
[19] 周鼎 2017 博士学位论文 (上海: 上海大学)
Zhou D 2007 Ph. D. Dissertation (Shanghai: Shanghai University) (in Chinese)
[20] Wu C T, Ju Y L, Wang Q, Wang Z G, Chen F, Zhou R L, Wang Y Z 2009 Laser Phys. Lett. 6 707
Google Scholar
[21] Chen F, Wu C T, Ju Y L, Yao B Q, Wang Y Z 2012 Laser Phys. 22 371
Google Scholar
[22] Zeng H, Liu G B, Dai J, Yan Y, Zhu B, He R, Xie L, Xu S, Chen X, Yao W, Cui X 2013 Sci. Rep. 3 1608
Google Scholar
[23] Mak K F, Lee C, Hone J, Shan J, Heinz T F 2010 Phys. Rev. Lett. 105 136805
Google Scholar
[24] Splendiani A, Sun L, Zhang Y, Li T, Kim J, Chim C Y, Galli G, Wang F 2010 Nano Lett. 10 1271
Google Scholar
[25] Li Z Y, Zhang B T, Yang J F, He J L, Huang H T, Zuo C H, Xu J L, Yang X Q, Zhao S 2010 Laser Phys. 20 761
Google Scholar
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